SI7138DP-T1-E3 [VISHAY]
Trans MOSFET N-CH 60V 19.7A 8-Pin PowerPAK SO T/R;
| 型号： | SI7138DP-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Trans MOSFET N-CH 60V 19.7A 8-Pin PowerPAK SO T/R 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7138DP
Vishay Siliconix
N-Channel 60 V (D-S) Reduced Q , Fast Switching MOSFET
gd
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
Low Thermal Resistance PowerPAK® Package
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
30
0.0078 at VGS = 10 V
0.009 at VGS = 6 V
•
•
•
60
55
30
100 % Rg and Avalanche Tested
Compliant to RoHS Directive 2002/95/EC
PowerPAK SO-8
APPLICATIONS
•
Primary Side Switch
- Very Low Rg and Qgd, Critical for Minimizing Losses
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
5
G
Bottom View
S
Ordering Information: Si7138DP-T1-E3 (Lead (Pb)-free)
Si7138DP-T1-GE3 (Lead (Pb)-free) and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TC = 25 °C
C = 70 °C
30
T
30
19.7b, c
15.7b, c
80
30a
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
4.5b, c
43
IAS
Avalanche Current
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
93
96
mJ
W
TC = 25 °C
TC = 70 °C
61.5
PD
Maximum Power Dissipation
5.4b, c
3.5b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
18
23
°C/W
RthJC
1.0
1.5
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
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1
Si7138DP
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 1 mA
ID = 250 µA
Drain-Source Breakdown Voltage
60
V
V
DS Temperature Coefficient
60.5
- 8.4
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
2
4
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
µA
A
VDS = 60 V, VGS = 0 V
DS = 60 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
10
30
VGS = 10 V, ID = 19.7 A
0.0065
0.0073
84
0.0078
0.009
Drain-Source On-State Resistancea
Ω
V
GS = 6 V, ID = 18 A
Forward Transconductancea
VDS = 15 V, ID = 19.7 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
6900
470
200
90
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 19.7 A
VDS = 30 V, VGS = 6 V, ID = 19.7 A
f = 1 MHz
pF
135
83
Qg
Total Gate Charge
55
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
27.5
11
0.6
47
0.9
70
180
60
15
40
20
75
15
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
120
40
V
DD = 30 V, RL = 3 Ω
ID ≅ 10 A, VGEN = 6 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
8
ns
Turn-On Delay Time
Rise Time
25
12
V
DD = 30 V, RL = 3 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
50
8
Drain-Source Body Diode Characteristics
IS
ISM
VSD
trr
TC = 25 °C
IS = 2.7 A
Continuous Source-Drain Diode Current
30
80
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.8
45
80
30
15
1.2
70
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
120
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
20
16
12
8
6 V
10 V thru 7 V
5 V
70
60
50
40
30
25 °C
T
C
= 125 °C
20
4 V
4
3 V
10
- 55 °C
0
0
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
8000
6000
4000
2000
0
0.0080
0.0076
C
iss
V
= 6 V
GS
0.0072
0.0068
0.0064
0.0060
V
GS
= 10 V
C
oss
C
rss
0
20
40
- Drain Current (A)
60
80
0
10
20
30
40
50
60
I
D
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
D
= 19.7 A
I
D
= 19.7 A
V
DS
= 30 V
V
GS
= 10,6 V
6
V
DS
= 48 V
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
20
40
60
80
100
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
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3
Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.020
0.015
I
D
= 19.7 A
T
J
= 150 °C
T = 25 °C
J
T
J
= 125 °C
10
0.010
0.005
T
J
= 25 °C
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
4
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.7
3.2
2.7
2.2
1.7
1.2
100
80
I
D
= 250 µA
60
40
20
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
limited
*
IDM limited
DS(on)
100 µs
I
D(on)
10
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
DC
T
= 25 °C
A
Single Pulse
BVDSS limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
80
60
40
Limited by Package
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
100
80
60
40
20
0
100
80
L x
I
D
T
=
A
BV - V
DD
10
0.000001
25
50
75
100
125
150
0.00001
0.0001
0.001
Time (s)
Maximum Single Pulse Avalanche Capability
T
- Case Temperature (°C)
C
Power Derating (Junction-to-Case)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
www.vishay.com
5
Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
-2
-1
-4
-3
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73530.
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Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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