SI7483DP [VISHAY]

P-Channel 30-V (D-S) MOSFET; P通道30 -V (D -S )的MOSFET
SI7483DP
型号: SI7483DP
厂家: VISHAY    VISHAY
描述:

P-Channel 30-V (D-S) MOSFET
P通道30 -V (D -S )的MOSFET

文件: 总6页 (文件大小:128K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si7483DP  
Vishay Siliconix  
New Product  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFETS  
V
(V)  
r
()  
I (A)  
D
DS  
DS(on)  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
0.005 @ V = --10 V  
GS  
-- 2 4  
-- 1 7  
-- 3 0  
APPLICATIONS  
0.0095 @ V = --4.5 V  
GS  
D Battery and Load Switching  
-- Notebook Computers  
-- Notebook Battery Packs  
PowerPAKt SO-8  
S
S
6.15 mm  
5.15 mm  
1
S
G
2
S
3
G
4
D
8
D
7
D
6
D
D
5
Bottom View  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
-- 3 0  
DS  
V
V
GS  
20  
T
= 25_C  
= 70_C  
-- 1 4  
-- 11  
-- 2 4  
-- 1 9  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
-- 6 0  
DM  
a
continuous Source Current (Diode Conduction)  
I
-- 4 . 5  
5.4  
-- 1 . 6  
1.9  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
3.4  
1.2  
Operating Junction and Storage Temperature Range  
T , T  
--55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t 10 sec  
Steady State  
Steady State  
18  
50  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71940  
S-21441—Rev. A, 19-Aug-02  
www.vishay.com  
1
Si7483DP  
Vishay Siliconix  
New Product  
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = --250 mA  
-- 1 . 0  
-- 3 . 0  
V
GS(th)  
DS  
GS D  
I
V
= 0 V, V = 20 V  
100  
nA  
GSS  
DS  
GS  
V
= --24 V, V = 0 V  
-- 1  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= --24 V, V = 0 V, T = 70_C  
-- 1 0  
GS  
J
a
On-State Drain Current  
I
V
DS  
= --5 V, V = --10 V  
-- 3 0  
A
D(on)  
GS  
V
= --10 V, I = --24 A  
0.0041  
0.0077  
0.005  
GS  
GS  
D
a
Drain-Source On-State Resistance  
r
DS(on)  
V
= --4.5 V, I = --17 A  
D
0.0095  
a
Forward Transconductance  
g
70  
S
V
V
= --15 V, I = --24 A  
D
fs  
DS  
a
Diode Forward Voltage  
V
SD  
I
= --2.9 A, V = 0 V  
--0.75  
-- 1 . 1  
180  
S
GS  
b
Dynamic  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
120  
18.3  
33.2  
25  
g
Q
Q
V
= --15 V, V = --10 V, I = --24 A  
nC  
ns  
gs  
gd  
DS  
GS  
D
t
40  
65  
d(on)  
t
40  
r
V
= --15 V, R = 15  
L
DD  
I
-- 1 A , V  
= --10 V, R = 6 Ω  
D
GEN G  
Turn-Off Delay Time  
Fall Time  
t
220  
125  
350  
200  
d(off)  
t
f
Gate Resistance  
R
4
g
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= --2.9 A, di/dt = 100 A/ms  
87  
135  
ns  
Notes  
a. Pulse test; pulse width 300 ms, duty cycle 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
60  
60  
50  
40  
30  
20  
10  
0
V
GS  
= 10 thru 4 V  
50  
40  
30  
20  
10  
0
T
= 125_C  
25_C  
C
3 V  
-- 5 5 _C  
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
DS  
-- Drain-to-Source Voltage (V)  
V
GS  
-- Gate-to-Source Voltage (V)  
Document Number: 71940  
S-21441—Rev. A, 19-Aug-02  
www.vishay.com  
2
Si7483DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.010  
10000  
8000  
6000  
4000  
2000  
0
V
GS  
= 4.5 V  
0.008  
0.006  
0.004  
0.002  
0.000  
C
iss  
V
GS  
= 10 V  
C
oss  
C
rss  
0
10  
20  
30  
40  
50  
0
6
12  
18  
24  
30  
I
D
-- Drain Current (A)  
V
DS  
-- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 15 V  
V
GS  
= 10 V  
DS  
I
= 24 A  
I = 24 A  
D
6
4
2
0
0
20  
40  
60  
80  
100  
120  
--50 --25  
0
25  
50  
75  
100 125 150  
Q
-- Total Gate Charge (nC)  
T -- Junction Temperature (_C)  
J
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.020  
0.016  
0.012  
0.008  
0.004  
0.000  
60  
10  
T
= 150_C  
J
I
D
= 24 A  
T
= 25_C  
J
1
0
2
4
6
8
10  
0.00  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
-- Source-to-Drain Voltage (V)  
V
GS  
-- Gate-to-Source Voltage (V)  
Document Number: 71940  
S-21441—Rev. A, 19-Aug-02  
www.vishay.com  
3
Si7483DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.8  
200  
160  
0.6  
I
D
= 250 mA  
0.4  
0.2  
120  
80  
0.0  
40  
0
-- 0 . 2  
-- 0 . 4  
--50 --25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
-- Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
1 ms  
Limited by  
DS(on)  
r
10  
1
10 ms  
100 ms  
1 s  
10 s  
T
= 25_C  
C
0.1  
Single Pulse  
dc  
0.01  
0.1  
1
10  
100  
V
DS  
-- Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 50_C/W  
thJA  
(t)  
3. T -- T = P  
JM  
Z
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-- 4  
-- 3  
-- 2  
-- 1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 71940  
S-21441—Rev. A, 19-Aug-02  
www.vishay.com  
4
Si7483DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.02  
0.05  
0.01  
-- 4  
-- 3  
-- 2  
-- 1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71940  
S-21441—Rev. A, 19-Aug-02  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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