SI7483DP [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI7483DP |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7483DP
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
V
(V)
r
(Ω)
I (A)
D
DS
DS(on)
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
0.005 @ V = --10 V
GS
-- 2 4
-- 1 7
-- 3 0
APPLICATIONS
0.0095 @ V = --4.5 V
GS
D Battery and Load Switching
-- Notebook Computers
-- Notebook Battery Packs
PowerPAKt SO-8
S
S
6.15 mm
5.15 mm
1
S
G
2
S
3
G
4
D
8
D
7
D
6
D
D
5
Bottom View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-- 3 0
DS
V
V
GS
20
T
= 25_C
= 70_C
-- 1 4
-- 11
-- 2 4
-- 1 9
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-- 6 0
DM
a
continuous Source Current (Diode Conduction)
I
-- 4 . 5
5.4
-- 1 . 6
1.9
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
3.4
1.2
Operating Junction and Storage Temperature Range
T , T
--55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 sec
Steady State
Steady State
18
50
23
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
www.vishay.com
1
Si7483DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = --250 mA
-- 1 . 0
-- 3 . 0
V
GS(th)
DS
GS D
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
V
= --24 V, V = 0 V
-- 1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= --24 V, V = 0 V, T = 70_C
-- 1 0
GS
J
a
On-State Drain Current
I
V
DS
= --5 V, V = --10 V
-- 3 0
A
D(on)
GS
V
= --10 V, I = --24 A
0.0041
0.0077
0.005
GS
GS
D
a
Drain-Source On-State Resistance
r
Ω
DS(on)
V
= --4.5 V, I = --17 A
D
0.0095
a
Forward Transconductance
g
70
S
V
V
= --15 V, I = --24 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
= --2.9 A, V = 0 V
--0.75
-- 1 . 1
180
S
GS
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
120
18.3
33.2
25
g
Q
Q
V
= --15 V, V = --10 V, I = --24 A
nC
ns
gs
gd
DS
GS
D
t
40
65
d(on)
t
40
r
V
= --15 V, R = 15 Ω
L
DD
I
≅ -- 1 A , V
= --10 V, R = 6 Ω
D
GEN G
Turn-Off Delay Time
Fall Time
t
220
125
350
200
d(off)
t
f
Gate Resistance
R
4
Ω
g
Source-Drain Reverse Recovery Time
t
rr
I
F
= --2.9 A, di/dt = 100 A/ms
87
135
ns
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
GS
= 10 thru 4 V
50
40
30
20
10
0
T
= 125_C
25_C
C
3 V
-- 5 5 _C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
-- Drain-to-Source Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
www.vishay.com
2
Si7483DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
10000
8000
6000
4000
2000
0
V
GS
= 4.5 V
0.008
0.006
0.004
0.002
0.000
C
iss
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
-- Drain Current (A)
V
DS
-- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
GS
= 10 V
DS
I
= 24 A
I = 24 A
D
6
4
2
0
0
20
40
60
80
100
120
--50 --25
0
25
50
75
100 125 150
Q
-- Total Gate Charge (nC)
T -- Junction Temperature (_C)
J
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.020
0.016
0.012
0.008
0.004
0.000
60
10
T
= 150_C
J
I
D
= 24 A
T
= 25_C
J
1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-- Source-to-Drain Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
www.vishay.com
3
Si7483DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
200
160
0.6
I
D
= 250 mA
0.4
0.2
120
80
0.0
40
0
-- 0 . 2
-- 0 . 4
--50 --25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
-- Temperature (_C)
Time (sec)
J
Safe Operating Area
100
1 ms
Limited by
DS(on)
r
10
1
10 ms
100 ms
1 s
10 s
T
= 25_C
C
0.1
Single Pulse
dc
0.01
0.1
1
10
100
V
DS
-- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50_C/W
thJA
(t)
3. T -- T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-- 4
-- 3
-- 2
-- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
www.vishay.com
4
Si7483DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.02
0.05
0.01
-- 4
-- 3
-- 2
-- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
SI7483DP-E3
TRANSISTOR 14 A, 30 V, 0.005 ohm, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
VISHAY
SI7487DP-T1
TRANSISTOR 18 A, 20 V, 0.0035 ohm, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
VISHAY
SI7491DP-T1-GE3
Power Field-Effect Transistor, 11A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
VISHAY
©2020 ICPDF网 联系我们和版权申明