SI7625DN [VISHAY]
P-Channel 30 V (D-S) MOSFET; P沟道30 V （D -S ）的MOSFET
| 型号： | SI7625DN |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30 V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si7625DN
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
Definition
TrenchFET® Power MOSFET
100% Rg Tested
100% UIS Tested
Compliant to RoHS Directive 2002/95/EC
- 35d
- 35d
0.007 at VGS = - 10 V
0.011 at VGS = - 4.5 V
•
•
•
•
- 30
39.5 nC
PowerPAK® 1212-8
APPLICATIONS
S
S
•
•
Notebook Adapter Switch
Notebook Load Switch
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View
Ordering Information: Si7625DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
- 30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
- 35d
- 35d
- 17.3a, b
- 13.8a, b
- 80
- 35d
- 3.0a, b
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Avalanche Current
- 20
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
20
mJ
W
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
52
33
PD
Maximum Power Dissipation
3.7a, b
2.4a, b
- 55 to 150
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
Typical
26
Maximum
Unit
°C/W
Maximum Junction-to-Ambienta, c
t ≤ 10 s
Steady State
33
Maximum Junction-to-Case
1.9
2.4
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 81 °C/W.
d. Package limited.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
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1
New Product
Si7625DN
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
V
V
DS Temperature Coefficient
- 23
5.0
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 1.0
- 30
- 2.5
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 30 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 5
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 15 A
0.0056
0.0088
47
0.007
0.011
Drain-Source On-State Resistancea
Ω
S
V
GS = - 4.5 V, ID = - 10 A
Forward Transconductancea
Dynamicb
VDS = - 10 V, ID = - 15 A
Ciss
Coss
Crss
Input Capacitance
4427
452
430
84.5
39.5
11
VDS = - 15 V, VGS = 0 V, f = 1 MHz
DS = - 15 V, VGS = - 10 V, ID = - 10 A
DS = - 15 V, VGS = - 4.5 V, ID = - 10 A
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
pF
V
V
126
60
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
13.5
1.8
15
0.4
3.6
30
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
V
DD = - 15 V, RL = 1.5 Ω
13
26
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
55
100
20
10
ns
Turn-On Delay Time
Rise Time
55
100
80
V
DD = - 15 V, RL = 1.5 Ω
42
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
52
100
34
17
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 35
- 80
- 1.2
24
A
Body Diode Voltage
IS = - 3 A, VGS = 0 V
- 0.74
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
14
4
ns
nC
Qrr
ta
8
I = - 10 A, dI/dt = 100 A/µs, T = 25 °C
F
J
8
ns
Reverse Recovery Rise Time
tb
6
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
New Product
Si7625DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
80
V
= 10 V thru 4 V
GS
64
48
32
16
0
6
T
= 125 °C
= 25 °C
C
4
T
C
V
= 3 V
GS
2
T
= - 55 °C
C
0
0
1
2
3
4
5
0.0
0.5
V
1.0
1.5
2.0
2.5
80
90
V
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
6000
4800
3600
2400
1200
0
0.012
0.010
0.008
0.006
0.004
0.002
V
=4.5V
GS
C
iss
V
=10V
48
GS
C
oss
C
rss
0
16
32
64
0
6
12
18
24
30
I
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
D
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
= 15 A
D
V
= 15 V
DS
I
= 10 A
D
V
= 10 V
GS
V
= 10 V
DS
V
= 4.5 V
GS
6
4
V
= 20 V
DS
2
0
- 50 - 25
0
25
50
75
100 125 150
0
18
36
54
72
T
- Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
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New Product
Si7625DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
100
10
1
I
= 15 A
D
T
= 150 °C
J
0.024
0.018
0.012
0.006
0.000
T
= 25 °C
J
T
= 125 °C
J
0.1
0.01
T
= 25 °C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
SD
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.5
100
80
60
40
20
0
I
= 250 μA
D
0.2
I
= 5 mA
D
- 0.1
- 0.4
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (°C)
J
Pulse (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
DC
T
= 25 °C
A
BVDSS Limited
10
Single Pulse
0.01
0.1
1
0.01
100
V
- Drain-to-Source Voltage (V)
DS
* V
> minimum V at which R
is specified
GS
GS
DS(on)
Safe Operating Area
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Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
New Product
Si7625DN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
56
42
Package Limited
28
14
0
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Current Derating*
65
52
39
26
13
0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
C
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
www.vishay.com
5
New Product
Si7625DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
1
0.02
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 81 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65737.
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Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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