SI7810DN-E3 [VISHAY]

TRANSISTOR 3.4 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power;
SI7810DN-E3
型号: SI7810DN-E3
厂家: VISHAY    VISHAY
描述:

TRANSISTOR 3.4 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power

开关 脉冲 晶体管
文件: 总4页 (文件大小:38K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si7810DN  
Vishay Siliconix  
New Product  
N-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance  
D PowerPAKt 1212-8 Package with Low  
0.062 @ V = 10 V  
5.4  
4.6  
GS  
100  
1.07-mm Profile  
0.084 @ V = 6 V  
GS  
D PWM Optimized  
APPLICATIONS  
D Primary Side Switch  
D In-Rush Current Limiter  
PowerPAKt 1212-8  
D
S
3.30 mm  
3.30 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
5.4  
4.3  
3.4  
2.8  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
20  
DM  
a
Continuous Source Current (Diode Conduction)  
Single Avalanche Current  
I
3.2  
1.3  
S
I
AS  
19  
18  
L = 0.1 mH  
Single Avalanche Energy  
E
AS  
mJ  
T
= 25_C  
= 70_C  
3.8  
2.0  
1.5  
0.8  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
65  
33  
81  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.9  
2.4  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 70689  
S-04559—Rev. A, 27-Aug-01  
www.vishay.com  
1
Si7810DN  
New Product  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
nA  
GSS  
V
= 80 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 80 V, V = 0 V, T = 55_C  
GS  
J
a
On-State Drain Current  
I
20  
A
V
DS  
w 5 V, V = 10 V  
GS  
D(on)  
0.052  
0.062  
0.084  
V
= 10 V, I = 5.4 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 6 V, I = 4.6 A  
0.070  
12  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 5.4 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
SD  
I
= 3.2 A, V = 0 V  
0.78  
1.2  
17  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
13.5  
3
g
Q
Q
V
= 50 V, V = 10 V, I = 5.4 A  
nC  
ns  
gs  
gd  
DS  
GS  
D
4.6  
10  
15  
20  
15  
45  
t
15  
25  
30  
25  
90  
d(on)  
t
r
V
= 50 V, R = 50 W  
L
= 10 V, R = 6 W  
GEN G  
DD  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 3.2 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
6 V  
V
GS  
= 10 thru 7 V  
16  
12  
8
T
= 125_C  
C
5 V  
4 V  
4
4
25_C  
55_C  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS  
Drain-to-Source Voltage (V)  
V
GS  
Gate-to-Source Voltage (V)  
Document Number: 70689  
www.vishay.com  
S-04559Rev. A, 27-Aug-01  
2
Si7810DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
1000  
800  
600  
400  
200  
0
0.20  
0.16  
0.12  
C
iss  
V
GS  
= 6 V  
0.08  
0.04  
0.00  
V
GS  
= 10 V  
C
oss  
C
rss  
0
4
8
12  
16  
20  
0
20  
40  
60  
80  
I
D
Drain Current (A)  
V
DS  
Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 50 V  
V
GS  
= 10 V  
DS  
I
D
= 5.4  
A
I = 5.4 A  
D
6
4
2
0
0
2
4
g
6
8
10  
12  
14  
50 25  
0
25  
50  
75  
100 125 150  
Q
Total Gate Charge (nC)  
T Junction Temperature (_C)  
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.16  
0.12  
0.08  
0.04  
0.00  
20  
T
= 150_C  
J
10  
I
D
= 5.4 A  
T
= 25_C  
J
1
0.0  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
Source-to-Drain Voltage (V)  
V
GS  
Gate-to-Source Voltage (V)  
Document Number: 70689  
www.vishay.com  
S-04559Rev. A, 27-Aug-01  
3
Si7810DN  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-To-Ambient  
0.6  
50  
40  
30  
0.4  
I
D
= 250 mA  
0.2  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
20  
10  
0
50 25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
Temperature (_C)  
Time (sec)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 65_C/W  
thJA  
(t)  
3. T T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
4  
3  
2  
1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 70689  
www.vishay.com  
S-04559Rev. A, 27-Aug-01  
4

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