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SI7911DN-T1-E3

更新时间：2024-10-21 18:22:02

品牌：VISHAY

描述：Trans MOSFET P-CH 20V 4.2A 8-Pin PowerPAK 1212 T/R

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规格参数
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替代型号

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SI7911DN-T1-E3 概述

Trans MOSFET P-CH 20V 4.2A 8-Pin PowerPAK 1212 T/R MOS管功率场效应晶体管

SI7911DN-T1-E3 规格参数

是否无铅：	不含铅	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, S-XDSO-C6	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.81	外壳连接：	DRAIN
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	4.2 A	最大漏极电流 (ID)：	4.2 A
最大漏源导通电阻：	0.051 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-XDSO-C6	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	2
端子数量：	6	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	SQUARE	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2.5 W	最大脉冲漏极电流 (IDM)：	20 A
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

SI7911DN-T1-E3 数据手册

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Si7911DN

Vishay Siliconix

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 5.7

- 5.0

- 4.2

TrenchFET^®Power MOSFETS: 1.8 V Rated

New Low Thermal Resistance PowerPAK^®

Package

0.051 at V_GS= - 4.5 V

0.067 at V_GS= - 2.5 V

0.094 at V_GS= - 1.8 V

RoHS

COMPLIANT

- 20

APPLICATIONS

•

Portable

- PA Switch

- Battery Switch

- Load Switch

PowerPAK 1212-8

3.30 mm

Bottom View

Ordering Information: Si7911DN-T1-E3 (Lead (Pb)-free)

Si7911DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 20

V_GS

T_A= 25 °C

T_A= 85 °C

- 5.7

- 4.1

- 4.2

- 3.0

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

- 20

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

- 2.1

2.5

- 1.1

1.3

_A= 25 °C

_A= 85 °C

Maximum Power Dissipation^a

P_D

1.3

0.85

Operating Junction and Storage Temperature Range

Soldering Recommendations^{b, c}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

R_thJA

Steady State

°C/W

Maximum Junction-to-Case

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

R_thJC

5.6

b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72340

S-81544-Rev. C, 07-Jul-08

www.vishay.com

Si7911DN

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

V_GS(th)

I_GSS

V_DS= V_GS, I_D= - 250 µA

Gate Threshold Voltage

- 0.40

- 1.0

100

- 1

V_DS= 0 V, V_GS

8 V

Gate-Body Leakage

V_DS= - 20 V, V_GS= 0 V

_DS= - 20 V, V_GS= 0 V, T_J= 85 °C

V_DS≤ - 5 V, V_GS= - 4.5 V

V_GS= - 4.5 V, I_D= - 5.7 A

I_DSS

Zero Gate Voltage Drain Current

µA

- 5

On-State Drain Current^a

I_D(on)

- 20

0.040

0.054

0.075

0.051

0.067

0.094

Drain-Source On-State Resistance^a

R_DS(on)

_GS= - 2.5 V, I_D= - 5.0 A

_GS= - 1.8 V, I_D= - 1.1 A

Forward Transconductance^a

Diode Forward Voltage^a

Dynamic^b

g_fs

V_DS= - 6 V, I_D= - 5.7 A

I_S= - 2.3 A, V_GS= 0 V

V_SD

- 0.8

- 1.2

Q_g

Q_gs

Q_gd

R_g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

9.5

1.6

2.5

7.2

_DS= - 6 V, V_GS= - 4.5 V, I_D= - 5.7 A

t_d(on)

t_r

t_d(off)

t_f

_DD= - 10 V, R_L= 10 Ω

I_D≅ - 1 A, V_GEN= - 4.5 V, R_G= 6 Ω

Turn-Off DelayTime

Fall Time

105

t_rr

I_F= - 2.1 A, dI/dt = 100 A/µs

Source-Drain Reverse Recovery Time

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

= - 55 °C

= 5 thru 2.5 V

25 °C

2 V

125 °C

1.5 V

1 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

- Gate-to-Source Voltage (V)

- Drain-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

www.vishay.com

Document Number: 72340

S-81544-Rev. C, 07-Jul-08

Si7911DN

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

1500

1200

900

600

300

0.20

0.16

0.12

0.08

0.04

0.00

= 1.8 V

iss

= 2.5 V

= 4.5 V

oss

rss

- Drain Current (A)

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

1.6

1.4

1.2

1.0

0.8

0.6

= 10 V

= 4.5 V

= 5.7 A

I = 5.7 A

- 50 - 25

100 125 150

- Total Gate Charge (nC)

T - Junction Temperature (°C)

Gate Charge

On-Resistance vs. Junction Temperature

0.20

0.16

0.12

0.08

0.04

0.00

= 5.7 A

= 1.1 A

= 150 °C

= 25 °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

- Gate-to-Source Voltage (V)

- Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 72340

S-81544-Rev. C, 07-Jul-08

www.vishay.com

Si7911DN

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

0.4

0.3

0.2

= 250 µA

0.1

0.0

- 0.1

- 0.2

- 50 - 25

100 125 150

0.001

0.01

0.1

100

600

Time (s)

- Temperature (°C)

Threshold Voltage

100

Single Pulse Power, Junction-to-Ambient

Limited

Limited by R

DS(on)

P(t) = 0.0001

P(t) = 0.001

P(t) = 0.01

D(on)

Limited

P(t) = 0.1

P(t) = 1

= 25 °C

P(t) = 10

0.1

Single Pulse

DSS

Limited

0.01

0.1

100

- Drain-to-Source Voltage (V)

* V > minimum V at which R is specified

DS(on)

Safe Operating Area, Junction-to-Ambient

Duty Cycle = 0.5

0.2

0.1

Notes:

0.1

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = R

= 75 °C/W

thJA

(t)

3. T

- T = P Z

A DM thJA

Single Pulse

4. Surface Mounted

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

100

600

www.vishay.com

Document Number: 72340

S-81544-Rev. C, 07-Jul-08

Si7911DN

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.1

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?72340.

Document Number: 72340

S-81544-Rev. C, 07-Jul-08

www.vishay.com

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 08-Feb-17

Document Number: 91000

SI7911DN-T1-E3 替代型号

型号	制造商	描述	替代类型	文档
SI7913DN-T1-E3	VISHAY	Dual P-Channel 20-V (D-S) MOSFET	类似代替

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