SI7911DN-T1-E3 [VISHAY]

Trans MOSFET P-CH 20V 4.2A 8-Pin PowerPAK 1212 T/R;
SI7911DN-T1-E3
型号: SI7911DN-T1-E3
厂家: VISHAY    VISHAY
描述:

Trans MOSFET P-CH 20V 4.2A 8-Pin PowerPAK 1212 T/R

开关 脉冲 晶体管
文件: 总6页 (文件大小:96K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si7911DN  
Vishay Siliconix  
Dual P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 5.7  
- 5.0  
- 4.2  
TrenchFET® Power MOSFETS: 1.8 V Rated  
New Low Thermal Resistance PowerPAK®  
Package  
0.051 at VGS = - 4.5 V  
0.067 at VGS = - 2.5 V  
0.094 at VGS = - 1.8 V  
RoHS  
COMPLIANT  
- 20  
APPLICATIONS  
Portable  
- PA Switch  
- Battery Switch  
- Load Switch  
PowerPAK 1212-8  
S
1
S
2
S1  
3.30 mm  
3.30 mm  
1
G1  
2
S2  
3
G2  
4
D1  
G
1
G
2
8
D1  
7
D2  
6
D2  
5
Bottom View  
D
2
D
1
Ordering Information: Si7911DN-T1-E3 (Lead (Pb)-free)  
Si7911DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
- 20  
8
V
VGS  
TA = 25 °C  
TA = 85 °C  
- 5.7  
- 4.1  
- 4.2  
- 3.0  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
- 20  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
- 2.1  
2.5  
- 1.1  
1.3  
T
T
A = 25 °C  
A = 85 °C  
Maximum Power Dissipationa  
PD  
W
1.3  
0.85  
Operating Junction and Storage Temperature Range  
Soldering Recommendationsb, c  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
40  
Maximum  
Unit  
t 10 s  
50  
94  
7
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
75  
°C/W  
Maximum Junction-to-Case  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
RthJC  
5.6  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 72340  
S-81544-Rev. C, 07-Jul-08  
www.vishay.com  
1
Si7911DN  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VGS(th)  
IGSS  
VDS = VGS, ID = - 250 µA  
Gate Threshold Voltage  
- 0.40  
- 1.0  
100  
- 1  
V
VDS = 0 V, VGS  
=
8 V  
Gate-Body Leakage  
nA  
VDS = - 20 V, VGS = 0 V  
DS = - 20 V, VGS = 0 V, TJ = 85 °C  
VDS - 5 V, VGS = - 4.5 V  
VGS = - 4.5 V, ID = - 5.7 A  
IDSS  
Zero Gate Voltage Drain Current  
µA  
A
V
- 5  
On-State Drain Currenta  
ID(on)  
- 20  
0.040  
0.054  
0.075  
14  
0.051  
0.067  
0.094  
Drain-Source On-State Resistancea  
RDS(on)  
V
V
GS = - 2.5 V, ID = - 5.0 A  
GS = - 1.8 V, ID = - 1.1 A  
Ω
Forward Transconductancea  
Diode Forward Voltagea  
Dynamicb  
gfs  
VDS = - 6 V, ID = - 5.7 A  
IS = - 2.3 A, VGS = 0 V  
S
V
VSD  
- 0.8  
- 1.2  
15  
Qg  
Qgs  
Qgd  
Rg  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
9.5  
1.6  
2.5  
7.2  
20  
V
DS = - 6 V, VGS = - 4.5 V, ID = - 5.7 A  
nC  
Ω
td(on)  
tr  
td(off)  
tf  
30  
55  
35  
V
DD = - 10 V, RL = 10 Ω  
ID - 1 A, VGEN = - 4.5 V, RG = 6 Ω  
Turn-Off DelayTime  
Fall Time  
70  
105  
60  
ns  
40  
trr  
IF = - 2.1 A, dI/dt = 100 A/µs  
Source-Drain Reverse Recovery Time  
25  
50  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
20  
16  
12  
8
20  
16  
12  
8
T
= - 55 °C  
C
V
= 5 thru 2.5 V  
GS  
25 °C  
2 V  
125 °C  
1.5 V  
4
4
1 V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
1
2
3
4
5
V
- Gate-to-Source Voltage (V)  
V
- Drain-to-Source Voltage (V)  
GS  
DS  
Output Characteristics  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 72340  
S-81544-Rev. C, 07-Jul-08  
Si7911DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
1500  
1200  
900  
600  
300  
0
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
V
= 1.8 V  
GS  
C
iss  
V
= 2.5 V  
GS  
V
= 4.5 V  
GS  
C
oss  
C
rss  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
I
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
D
On-Resistance vs. Drain Current  
Capacitance  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 10 V  
V
D
= 4.5 V  
DS  
GS  
I
= 5.7 A  
I = 5.7 A  
0
2
4
6
8
10  
12  
- 50 - 25  
0
25  
50  
75  
100 125 150  
Q
- Total Gate Charge (nC)  
T - Junction Temperature (°C)  
g
J
Gate Charge  
On-Resistance vs. Junction Temperature  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
20  
10  
I
D
= 5.7 A  
I
D
= 1.1 A  
T
= 150 °C  
J
T
= 25 °C  
J
1
0
1
2
3
4
5
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Gate-to-Source Voltage (V)  
GS  
V
SD  
- Source-to-Drain Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 72340  
S-81544-Rev. C, 07-Jul-08  
www.vishay.com  
3
Si7911DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
0.4  
30  
25  
0.3  
0.2  
20  
15  
10  
I
= 250 µA  
D
0.1  
0.0  
- 0.1  
- 0.2  
5
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
10  
100  
600  
1
Time (s)  
T
- Temperature (°C)  
J
Threshold Voltage  
100  
Single Pulse Power, Junction-to-Ambient  
I
Limited  
DM  
Limited by R  
*
DS(on)  
10  
1
P(t) = 0.0001  
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
T
= 25 °C  
A
P(t) = 10  
DC  
0.1  
Single Pulse  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
* V > minimum V at which R is specified  
DS(on)  
GS  
GS  
Safe Operating Area, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 75 °C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
10  
100  
600  
www.vishay.com  
4
Document Number: 72340  
S-81544-Rev. C, 07-Jul-08  
Si7911DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.05  
0.02  
Single Pulse  
0.1  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
10  
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?72340.  
Document Number: 72340  
S-81544-Rev. C, 07-Jul-08  
www.vishay.com  
5
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

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