SI8416DB [VISHAY]
N-Channel 8 V (D-S) MOSFET; N沟道8 V （D -S ）的MOSFET
| 型号： | SI8416DB |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 8 V (D-S) MOSFET |
| 文件： | 总9页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si8416DB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D (A)d
VDS (V)
RDS(on) (Ω) Max.
Qg (Typ.)
Definition
•
•
•
•
TrenchFET® Power MOSFET
Ultra-small 1.5 mm x 1 mm Maximum Outline
Ultra-thin 0.59 mm Maximum Height
0.023 at VGS = 4.5 V
0.025 at VGS = 2.5 V
0.030 at VGS = 1.8 V
0.040 at VGS = 1.5 V
0.095 at VGS = 1.2 V
16
16
16
15
3
8
17 nC
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Low On-Resistance Load Switch for Portable Devices
- Low Power Consumption, Low Voltage Drop
- Increased Battery Life
MICRO FOOT
Bump Side View
Backside View
- Space Savings on PCB
S
S
D
G
S
D
2
3
4
1
6
5
D
G
Device Marking: 8416
xxx = Date/Lot Traceability Code
N-Channel MOSFET
S
Ordering Information:
Si8416DB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
8
5
V
VGS
16e
16e
9.3a, b
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
7.4a, b
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
20
TC = 25 °C
TA = 25 °C
11
Continuous Source-Drain Diode Current
2.3a, b
13
T
C = 25 °C
TC = 70 °C
A = 25 °C
8.4
PD
Maximum Power Dissipation
W
2.77a, b
T
1.77a, b
- 55 to 150
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
°C
IR/Convection
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Case in defined as the top surface of the package.
e. TC = 25 °C package limited.
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)c
RthJA
37
7
45
°C/W
RthJC
Steady State
9.5
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
c. Case is defined as top surface of the package.
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
8
V
V
DS Temperature Coefficient
2.2
mV/°C
VGS(th) Temperature Coefficient
- 2.7
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.35
0.80
100
1
V
IGSS
VDS = 0 V, VGS
=
5 V
nA
VDS = 8 V, VGS = 0 V
DS = 8 V, VGS = 0 V, TJ = 70 °C
VDS ≥ 5 V, VGS = 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
ID(on)
5
VGS = 4.5 V, ID = 1.5 A
0.019
0.021
0.023
0.027
0.040
22
0.023
0.025
0.030
0.040
0.095
V
GS = 2.5 V, ID = 1 A
GS = 1.8 V, ID = 1 A
Drain-Source On-State Resistancea
RDS(on)
V
Ω
S
V
V
GS = 1.5 V, ID = 0.5 A
GS = 1.2 V, ID = 0.5 A
Forward Transconductancea
gfs
VDS = 4 V, ID = 1.5 A
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1470
580
450
17
VDS = 4 V, VGS = 0 V, f = 1 MHz
pF
26
Qgs
Qgd
Rg
VDS = 4 V, VGS = 4.5 V, ID = 1.5 A
VGS = 0.1 V, f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
1.8
3.4
2.5
13
nC
Ω
td(on)
tr
td(off)
tf
25
30
80
20
15
V
DD = 4 V, RL = 2.7 Ω
ns
ID ≅ 1.5 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
40
10
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Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
20
- 20
1.2
70
A
Pulse Diode Forward Current
Body Diode Voltage
IS = 1.5 A, VGS = 0
0.7
35
18
13
22
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
35
IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
15
10
5
10
VGS = 5 V thru 1.5 V
8
6
TC = 25 °C
4
TC = 125 °C
2
TC = - 55 °C
VGS = 1 V
2.5
0
0
0.0
0.5
1.0
1.5
2.0
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
2400
2000
1600
1200
800
400
0
VGS = 1.2 V
Ciss
VGS = 1.5 V
Coss
VGS = 1.8 V
Crss
VGS = 4.5 V
V
GS = 2.5 V
0
4
8
12
16
20
0
2
4
6
8
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
ID = 1.5 A
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.5 A
VGS = 1.5 V; ID = 0.5 A
VDS = 4 V
4
3
2
1
0
VDS = 2 V
V
GS = 1.2 V; ID = 0.5 A
VDS = 6.4 V
0
4
8
12
16
20
- 50 - 25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.10
0.08
0.06
0.04
0.02
0.00
ID = 1.5 A
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
ID = 250 μA
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)
*
100 μs
10
1
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
TA = 25 °C
BVDSS Limited
10 100
0.01
0.1
1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
12
9
24
20
16
12
8
Package Limited
6
3
4
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC - Ambient Temperature (°C)
T
- Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
0.02
Single Pulse
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-3
-1
-4
-2
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (0.5 mm PITCH)
6 x Ø 0.24 to 0.26 Note 3
Solder Mask ~ Ø 0.25
C
B
A
1
2
Bump Note 2
e
e
Recommended Land
6 x Ø b
D
D
S
S
S
8416
G
XXX
s
e
e
s
Mark on Backside of Die
E
Notes (unless otherwise specified):
1. All dimensions are in millimeters.
2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter ∅ 0.30 mm to 0.32 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5.
·
is location of pin 1.
Millimetersa
Nom.
Inches
Nom.
Dim.
Min.
0.510
0.220
0.290
0.300
Max.
0.590
0.280
0.310
0.320
Min.
Max.
A
A1
A2
b
0.575
0.0201
0.0087
0.0114
0.0118
0.0224
0.0098
0.0118
0.0122
0.0197
0.0098
0.0378
0.0575
0.0232
0.0110
0.0122
0.0126
0.250
0.300
0.310
e
0.500
s
0.230
0.920
1.420
0.250
0.270
1.000
1.500
0.0090
0.0362
0.0559
0.0106
0.0394
0.0591
D
0.960
E
1.460
Note:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63716.
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Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SI8417DB-T2-E1
Small Signal Field-Effect Transistor, 0.0097A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2.40 X 2 MM, ROHS COMPLIANT, ULTRA SMALL, MICRO FOOT, 4 PIN
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