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SI8800EDB

更新时间：2025-07-01 10:19:20
品牌：VISHAY
描述：N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height

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SI8800EDB 概述

N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height N沟道20 V （ DS ） MOSFET超薄0.357毫米高度

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New Product  
Si8800EDB  
Vishay Siliconix  
N-Channel 20 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)a  
2.8  
Qg (Typ.)  
Definition  
0.080 at VGS = 4.5 V  
0.090 at VGS = 2.5 V  
0.105 at VGS = 1.8 V  
0.150 at VGS = 1.5 V  
•
•
•
•
TrenchFET® Power MOSFET  
Ultra Small 0.8 mm x 0.8 mm Outline  
Ultra Thin 0.357 mm Height  
2.6  
20  
3.2 nC  
2.4  
Typical ESD Protection 1500 V  
2.0  
• Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
MICRO FOOT  
•
Portable Devices such as Cell Phones,  
Smart Phones and MP3 Players  
- Load Switch  
D
Bump Side View  
Backside View  
- Small Signal Switch  
S
S
G
D
2
1
4
R
G
3
Device Marking: 800  
xxx = Date/Lot Traceability Code  
Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free)  
S
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
8
VGS  
T
A = 25 °C  
2.8a  
2.2a  
2.0b  
1.6b  
15  
TA = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IS  
Pulsed Drain Current  
TA = 25 °C  
TA = 25 °C  
0.7a  
0.4b  
0.9a  
0.6a  
0.5b  
0.3b  
- 55 to 150  
260  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
TA = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipation  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
105  
Maximum  
135  
Unit  
Maximum Junction-to-Ambienta, d  
t ≤ 5 s  
°C/W  
Maximum Junction-to-Ambientb, e  
Notes:  
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.  
200  
260  
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.  
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.  
d. Maximum under steady state conditions is 185 °C/W.  
e. Maximum under steady state conditions is 330 °C/W.  
Document Number: 66700  
S10-1046-Rev. A, 03-May-10  
www.vishay.com  
1
New Product  
Si8800EDB  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
Drain-Source Breakdown Voltage  
VDS Temperature Coefficient  
VDS  
VGS = 0 V, ID = 250 µA  
ID = 250 µA  
20  
V
mV/°C  
V
ΔVDS/TJ  
ΔVGS(th)/TJ  
VGS(th)  
18  
VGS(th) Temperature Coefficient  
- 2.3  
Gate-Source Threshold Voltage  
VDS = VGS , ID = 250 µA  
0.4  
10  
1.0  
0.5  
6
VDS = 0 V, VGS  
=
4.5 V  
8 V  
Gate-Source Leakage  
IGSS  
VDS = 0 V, VGS  
=
µA  
A
VDS = 20 V, VGS = 0 V  
DS = 20 V, VGS = 0 V, TJ = 55 °C  
VDS ≥ 5 V, VGS = 4.5 V  
VGS = 4.5 V, ID = 1.0 A  
VGS = 2.5 V, ID = 1.0 A  
VGS = 1.8 V, ID = 1.0 A  
VGS = 1.5 V, ID = 0.5 A  
VDS = 10 V, ID = 1.0 A  
1
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
IDSS  
V
10  
ID(on)  
0.066  
0.072  
0.082  
0.095  
10  
0.080  
0.090  
0.105  
0.150  
Drain-Source On-State Resistancea  
RDS(on)  
Ω
S
Forward Transconductancea  
gfs  
Dynamicb  
VDS = 10 V, VGS = 8 V, ID = 1.0 A  
5.5  
3.2  
0.42  
0.5  
1.0  
65  
8.3  
5.0  
Total Gate Charge  
Qg  
nC  
Gate-Source Charge  
Qgs  
Qgd  
Rg  
V
DS = 10 V, VGS = 4.5 V, ID = 1.0 A  
f = 1 MHz  
Gate-Drain Charge  
Gate Resistance  
kΩ  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
130  
170  
1800  
700  
50  
Rise Time  
85  
V
DD = 10 V, RL = 10 Ω  
ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω  
Turn-Off Delay Time  
900  
350  
25  
Fall Time  
ns  
Turn-On Delay Time  
Rise Time  
40  
80  
V
DD = 10 V, RL = 10 Ω  
ID ≅ 1.0 A, VGEN = 8 V, Rg = 1 Ω  
Turn-Off Delay Time  
1100  
350  
2200  
700  
Fall Time  
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
Pulse Diode Forward Current  
Body Diode Voltage  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
0.7  
15  
A
IS = 1.0 A, VGS = 0 V  
1.0  
13  
5
1.5  
25  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
ns  
nC  
Qrr  
ta  
10  
IF = 1.0 A, dI/dt = 100 A/µs, TJ = 25 °C  
8
ns  
tb  
5
Notes:  
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 66700  
S10-1046-Rev. A, 03-May-10  
New Product  
Si8800EDB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
1.5  
-1  
-3  
-5  
-7  
-9  
10  
10  
10  
10  
10  
1.2  
T
= 25 °C  
J
0.9  
0.6  
0.3  
0.0  
T
= 150 °C  
J
T
= 25 °C  
J
-11  
10  
0
3
6
9
12  
15  
1.5  
6
0
3
6
9
12  
15  
3.0  
15  
V
- Gate-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
GS  
Gate Current vs. Gate-Source Voltage  
Gate Current vs. Gate-Source Voltage  
15  
12  
9
5
4
3
2
1
0
V
= 5 V thru 2 V  
GS  
V
= 1.5 V  
GS  
6
T
= 25 °C  
C
3
T
= 125 °C  
0.6  
C
V
= 1 V  
GS  
T
= - 55 °C  
C
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.3  
V
0.9  
1.2  
- Gate-to-Source Voltage (V)  
V
- Drain-to-Source Voltage (V)  
GS  
DS  
Output Characteristics  
Transfer Characteristics  
0.15  
0.12  
0.09  
0.06  
0.03  
0.00  
8
I
= 1 A  
D
V
= 5 V  
DS  
6
4
2
0
V
= 1.5 V  
GS  
V
= 1.8 V  
GS  
V
= 10 V  
DS  
V
= 2.5 V  
GS  
V
= 4.5 V  
GS  
V
= 16 V  
DS  
0
3
6
9
12  
0
1
2
3
4
5
Q
- Total Gate Charge (nC)  
I
- Drain Current (A)  
g
D
On-Resistance vs. Drain Current  
Gate Charge  
Document Number: 66700  
S10-1046-Rev. A, 03-May-10  
www.vishay.com  
3
New Product  
Si8800EDB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
10  
1.5  
V
= 4.5 V, V  
= 2.5 V, V  
= 1.8 V; I = 1 A  
GS D  
GS  
GS  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
T
= 150 °C  
J
T
= 25 °C  
J
1
V
= 1.5 V; I = 0.5 A  
D
GS  
0.1  
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
T
- Junction Temperature (°C)  
V
- Source-to-Drain Voltage (V)  
J
SD  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
I
= 1.5 A; T = 125 °C  
J
D
I
= 250 μA  
D
I
= 0.5 A; T = 125 °C  
J
D
I
= 1.5 A; T = 25 °C  
J
D
I
= 0.5 A; T = 25 °C  
J
D
- 50 - 25  
0
25  
50  
75  
100 125 150  
0
1
2
3
4
5
V
- Gate-to-Source Voltage (V)  
T
- Temperature (°C)  
GS  
J
On-Resistance vs. Gate-to-Source Voltage  
Threshold Voltage  
14  
12  
10  
8
6
4
2
0
0.001  
0.01  
0.1  
1
10  
100  
1000  
Time (s)  
Single Pulse Power (Junction-to-Ambient)  
www.vishay.com  
4
Document Number: 66700  
S10-1046-Rev. A, 03-May-10  
New Product  
Si8800EDB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
100  
Limited by R  
*
DS(on)  
10  
1
100 μs  
1 ms  
10 ms  
T
= 25 °C  
0.1  
A
Single Pulse  
100 ms, 1 s  
10 s, DC  
BVDSS Limited  
10  
0.01  
0.1  
1
100  
V
- Drain-to-Source Voltage (V)  
DS  
* V  
> minimum V at which R  
is specified  
DS(on)  
GS  
GS  
Safe Operating Area, Junction-to-Ambient  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
T
- Ambient Temperature (°C)  
T
- Ambient Temperature (°C)  
A
A
Power Derating  
Current Derating*  
Note:  
When mounted on 1" x 1" FR4 with full copper.  
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
limit.  
Document Number: 66700  
S10-1046-Rev. A, 03-May-10  
www.vishay.com  
5
New Product  
Si8800EDB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.1  
0.05  
P
DM  
t
1
0.02  
t
2
t
1
1. Duty Cycle, D =  
t
2
2. Per Unit Base = R  
= 185 °C/W  
thJA  
(t)  
3. T - T = P  
Z
JM  
A
DM thJA  
Single Pulse  
0.01  
4. Surface Mounted  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
100  
1000  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)  
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.1  
P
DM  
0.05  
t
1
t
2
0.02  
t
1
1. Duty Cycle, D =  
t
2
2. Per Unit Base = R  
= 330 °C/W  
thJA  
(t)  
3. T - T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
100  
1000  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)  
www.vishay.com  
6
Document Number: 66700  
S10-1046-Rev. A, 03-May-10  
New Product  
Si8800EDB  
Vishay Siliconix  
PACKAGE OUTLINE  
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)  
4 x Ø b  
S
S
800  
G
D
XXX  
s
e
Mark on Backside of die  
D
4 x Ø 0.205 to 0.225 Note 4  
Solder Mask ~ Ø 0.215  
2
3
4
1
e
Recommended Land  
Notes (Unless otherwise specified):  
1. All dimensions are in millimeters.  
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø 0.165 mm to Ø 0.185 mm.  
3. Backside surface is coated with a Ti/Ni/Ag layer.  
4. Non-solder mask defined copper landing pad.  
5.  
·
is location of pin 1.  
Millimetersa  
Nom.  
Inches  
Dim.  
Min.  
0.314  
0.127  
0.187  
0.165  
Max.  
0.400  
0.187  
0.213  
0.185  
Min.  
Nom.  
0.0141  
0.0062  
0.0079  
0.0068  
0.0157  
0.0078  
0.0314  
Max.  
A
A1  
A2  
b
0.357  
0.0124  
0.0050  
0.0074  
0.0064  
0.0157  
0.0074  
0.0084  
0.0072  
0.157  
0.200  
0.175  
e
0.400  
s
0.180  
0.760  
0.200  
0.220  
0.840  
0.0070  
0.0299  
0.0086  
0.0330  
D
0.800  
Notes:  
a. Use millimeters as the primary measurement.  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?66700.  
Document Number: 66700  
S10-1046-Rev. A, 03-May-10  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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