SI8800EDB [VISHAY]
N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height; N沟道20 V （ DS ） MOSFET超薄0.357毫米高度
| 型号： | SI8800EDB |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height |
| 文件： | 总8页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si8800EDB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)a
2.8
Qg (Typ.)
Definition
0.080 at VGS = 4.5 V
0.090 at VGS = 2.5 V
0.105 at VGS = 1.8 V
0.150 at VGS = 1.5 V
•
•
•
•
TrenchFET® Power MOSFET
Ultra Small 0.8 mm x 0.8 mm Outline
Ultra Thin 0.357 mm Height
2.6
20
3.2 nC
2.4
Typical ESD Protection 1500 V
2.0
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
MICRO FOOT
•
Portable Devices such as Cell Phones,
Smart Phones and MP3 Players
- Load Switch
D
Bump Side View
Backside View
- Small Signal Switch
S
S
G
D
2
1
4
R
G
3
Device Marking: 800
xxx = Date/Lot Traceability Code
Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
8
VGS
T
A = 25 °C
2.8a
2.2a
2.0b
1.6b
15
TA = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TA = 25 °C
TA = 25 °C
0.7a
0.4b
0.9a
0.6a
0.5b
0.3b
- 55 to 150
260
Continuous Source-Drain Diode Current
T
A = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
105
Maximum
135
Unit
Maximum Junction-to-Ambienta, d
t ≤ 5 s
°C/W
Maximum Junction-to-Ambientb, e
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
200
260
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
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1
New Product
Si8800EDB
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 µA
ID = 250 µA
20
V
mV/°C
V
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
18
VGS(th) Temperature Coefficient
- 2.3
Gate-Source Threshold Voltage
VDS = VGS , ID = 250 µA
0.4
10
1.0
0.5
6
VDS = 0 V, VGS
=
4.5 V
8 V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS
=
µA
A
VDS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.0 A
VGS = 2.5 V, ID = 1.0 A
VGS = 1.8 V, ID = 1.0 A
VGS = 1.5 V, ID = 0.5 A
VDS = 10 V, ID = 1.0 A
1
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
V
10
ID(on)
0.066
0.072
0.082
0.095
10
0.080
0.090
0.105
0.150
Drain-Source On-State Resistancea
RDS(on)
Ω
S
Forward Transconductancea
gfs
Dynamicb
VDS = 10 V, VGS = 8 V, ID = 1.0 A
5.5
3.2
0.42
0.5
1.0
65
8.3
5.0
Total Gate Charge
Qg
nC
Gate-Source Charge
Qgs
Qgd
Rg
V
DS = 10 V, VGS = 4.5 V, ID = 1.0 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
kΩ
Turn-On Delay Time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
130
170
1800
700
50
Rise Time
85
V
DD = 10 V, RL = 10 Ω
ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
900
350
25
Fall Time
ns
Turn-On Delay Time
Rise Time
40
80
V
DD = 10 V, RL = 10 Ω
ID ≅ 1.0 A, VGEN = 8 V, Rg = 1 Ω
Turn-Off Delay Time
1100
350
2200
700
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
0.7
15
A
IS = 1.0 A, VGS = 0 V
1.0
13
5
1.5
25
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 1.0 A, dI/dt = 100 A/µs, TJ = 25 °C
8
ns
tb
5
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 66700
S10-1046-Rev. A, 03-May-10
New Product
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.5
-1
-3
-5
-7
-9
10
10
10
10
10
1.2
T
= 25 °C
J
0.9
0.6
0.3
0.0
T
= 150 °C
J
T
= 25 °C
J
-11
10
0
3
6
9
12
15
1.5
6
0
3
6
9
12
15
3.0
15
V
- Gate-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
GS
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
15
12
9
5
4
3
2
1
0
V
= 5 V thru 2 V
GS
V
= 1.5 V
GS
6
T
= 25 °C
C
3
T
= 125 °C
0.6
C
V
= 1 V
GS
T
= - 55 °C
C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.3
V
0.9
1.2
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
0.15
0.12
0.09
0.06
0.03
0.00
8
I
= 1 A
D
V
= 5 V
DS
6
4
2
0
V
= 1.5 V
GS
V
= 1.8 V
GS
V
= 10 V
DS
V
= 2.5 V
GS
V
= 4.5 V
GS
V
= 16 V
DS
0
3
6
9
12
0
1
2
3
4
5
Q
- Total Gate Charge (nC)
I
- Drain Current (A)
g
D
On-Resistance vs. Drain Current
Gate Charge
Document Number: 66700
S10-1046-Rev. A, 03-May-10
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New Product
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
1.5
V
= 4.5 V, V
= 2.5 V, V
= 1.8 V; I = 1 A
GS D
GS
GS
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T
= 150 °C
J
T
= 25 °C
J
1
V
= 1.5 V; I = 0.5 A
D
GS
0.1
- 50 - 25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
- Junction Temperature (°C)
V
- Source-to-Drain Voltage (V)
J
SD
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.14
0.12
0.10
0.08
0.06
0.04
I
= 1.5 A; T = 125 °C
J
D
I
= 250 μA
D
I
= 0.5 A; T = 125 °C
J
D
I
= 1.5 A; T = 25 °C
J
D
I
= 0.5 A; T = 25 °C
J
D
- 50 - 25
0
25
50
75
100 125 150
0
1
2
3
4
5
V
- Gate-to-Source Voltage (V)
T
- Temperature (°C)
GS
J
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
14
12
10
8
6
4
2
0
0.001
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
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Document Number: 66700
S10-1046-Rev. A, 03-May-10
New Product
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by R
*
DS(on)
10
1
100 μs
1 ms
10 ms
T
= 25 °C
0.1
A
Single Pulse
100 ms, 1 s
10 s, DC
BVDSS Limited
10
0.01
0.1
1
100
V
- Drain-to-Source Voltage (V)
DS
* V
> minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
- Ambient Temperature (°C)
T
- Ambient Temperature (°C)
A
A
Power Derating
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
www.vishay.com
5
New Product
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
t
1
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 185 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
t
2
0.02
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 330 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
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Document Number: 66700
S10-1046-Rev. A, 03-May-10
New Product
Si8800EDB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
4 x Ø b
S
S
800
G
D
XXX
s
e
Mark on Backside of die
D
4 x Ø 0.205 to 0.225 Note 4
Solder Mask ~ Ø 0.215
2
3
4
1
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø 0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5.
·
is location of pin 1.
Millimetersa
Nom.
Inches
Dim.
Min.
0.314
0.127
0.187
0.165
Max.
0.400
0.187
0.213
0.185
Min.
Nom.
0.0141
0.0062
0.0079
0.0068
0.0157
0.0078
0.0314
Max.
A
A1
A2
b
0.357
0.0124
0.0050
0.0074
0.0064
0.0157
0.0074
0.0084
0.0072
0.157
0.200
0.175
e
0.400
s
0.180
0.760
0.200
0.220
0.840
0.0070
0.0299
0.0086
0.0330
D
0.800
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66700.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
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7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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