SI9435BDY_13 [VISHAY]

Si9435BDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

- 30

R

DS(on)

(Ω)

0.042 at V

GS

= - 10 V

0.055 at V

GS

= - 6 V

0.070 at V

GS

= - 4.5 V

I

D

(A)

- 5.7

- 5.0

- 4.4

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

SO-8

S

S

S

G

1

2

3

4

Top View

8

7

6

5

D

D

G

D

D

S

D

Ordering Information:

Si9435BDY-T1-E3

(Lead (Pb)-free)

Si9435BDY-T1-GE3

(Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

T

A

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150 °C)

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

T

A

= 25 °C

T

A

= 70 °C

T

A

= 25 °C

T

A

= 70 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

J

, T

stg

- 2.3

2.5

1.6

- 55 to 150

- 5.7

- 4.6

- 30

- 1.1

1.3

0.8

W

°C

10 s

- 30

± 20

- 4.1

- 3.2

A

Steady State

Unit

V

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

t

≤

10 s

Steady State

Steady State

Symbol

R

thJA

R

thJF

Typical

40

70

24

Maximum

50

95

30

°C/W

Unit

Document Number: 72245

S09-0870-Rev. D, 18-May-09

www.vishay.com

1

Si9435BDY

Vishay Siliconix

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

V

GS(th)

I

GSS

I

DSS

I

D(on)

V

DS

= V

GS

, I

D

= - 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= - 30 V, V

GS

= 0 V

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 70 °C

V

DS

≤

- 10 V, V

GS

= - 10 V

V

DS

≤

- 5 V, V

GS

= - 4.5 V

V

GS

= - 10 V, I

D

= - 5.7 A

Drain-Source On-State Resistance

Forward Transconductance

b

Diode Forward Voltage

b

Dynamic

a

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

I

F

= - 1.2 A, dI/dt = 100 A/µs

V

DD

= - 15 V, R

L

= 15

Ω

I

D

≅

- 1 A, V

GEN

= - 10 V, R

g

= 6

Ω

V

DS

= - 15 V, V

GS

= - 10 V, I

D

= - 3.5 A

16

2.3

4.5

8.8

14

14

42

30

30

25

25

70

50

60

ns

Ω

24

nC

b

Symbol

Test Conditions

Min.

- 1.0

Typ.

a

Max.

- 3.0

± 100

-1

-5

Unit

V

nA

µA

A

- 20

-5

0.033

0.043

0.056

13

- 0.8

- 1.1

0.042

0.055

0.070

R

DS(on)

g

fs

V

SD

V

GS

= - 6 V, I

D

= - 5 A

V

GS

= - 4.5 V, I

D

= - 4.4 A

V

DS

= - 15 V, I

D

= - 5.7 A

I

S

= - 2.3 A, V

GS

= 0 V

Ω

S

V

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

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Document Number: 72245

S09-0870-Rev. D, 18-May-09

Si9435BDY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

30

V

GS

= 10 V thru 6 V

25

I

D

- Drain Current (A)

I

D

- Drain Current (A)

5V

30

25

20

20

15

4V

10

15

10

T

C

= 125

°C

5

3V

0

0

1

2

3

4

5

V

DS

- Drain-to-Source Voltage (V)

5

25

°C

- 55

°C

0

0

1

2

3

4

5

V

GS

- Gate-to-Source Voltage (V)

Output Characteristics

0.15

1100

Transfer Characteristics

R

DS(on)

- On-Resistance (Ω)

0.12

C - Capacitance (pF)

880

C

iss

660

0.09

V

GS

= 4.5 V

0.06

V

GS

= 6 V

0.03

V

GS

= 10 V

0.00

0

4

8

12

16

20

440

C

oss

220

C

rss

0

0

5

10

15

20

25

30

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

10

V

DS

= 15 V

I

D

= 3.5 A

R

DS(on)

- On-Resistance

(Normalized)

8

1.6

V

GS

= 10 V

I

D

= 5.7 A

1.4

Capacitance

V

GS

- Gate-to-Source Voltage (V)

6

1.2

4

1.0

2

0.8

0

0.0

3.2

6.4

9.6

12.8

16.0

0.6

- 50

- 25

0

25

50

75

100

125

150

Q

g

- Total Gate Charge (nC)

T

J

- Junction Temperature (°C)

Gate Charge

Document Number: 72245

S09-0870-Rev. D, 18-May-09

On-Resistance vs. Junction Temperature

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Si9435BDY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

50

0.20

0.16

R

DS(on)

- On-Resistance (Ω)

I

S

- Source Current (A)

I

D

= 5.7 A

0.12

10

T

J

= 150

°C

T

J

= 25

°C

0.08

0.04

1

0.0

0.00

0.2

0.4

0.6

0.8

1.0

1.2

0

2

4

6

8

10

V

GS

- Gate-to-Source Voltage (V)

V

SD

- Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.6

150

On-Resistance vs. Gate-to-Source Voltage

0.4

V

GS(th)

Variance (V)

I

D

= 250

µA

Power (W)

0.2

120

90

0.0

60

- 0.2

30

- 0.4

- 50

- 25

0

25

50

75

100

125

150

0

10-

3

10-

2

10

-1

Time (s)

1

10

T

J

- Temperature (°C)

Threshold Voltage

100

Limited by R

DS(on)

*

Single Pulse Power, Junction-to-Ambient

10

I

D

- Drain Current (A)

1 ms

1

10 ms

100 ms

1s

10 s

DC

0.1

T

C

= 25 °C

Single Pulse

0.01

0.1

1

10

100

V

DS

- Drain-to-Source Voltage (V)

* V

DS

> minimum V

GS

at which R

DS(on)

is specified

Safe Operating Area, Junction-to-Foot

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Document Number: 72245

S09-0870-Rev. D, 18-May-09

Si9435BDY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

2

1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2

Notes:

0.1

0.1

0.05

t

1

P

DM

0.02

t

2

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 70

°C/W

t

1

t

2

Single Pulse

0.01

10-

4

10-

3

10-

2

10-

1

1

Square Wave Pulse Duration (s)

3. T

JM

-

T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

10-

4

10-

3

10-

2

10-

1

Square Wave Pulse Duration (s)

1

10

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see

www.vishay.com/ppg?72245.

Document Number: 72245

S09-0870-Rev. D, 18-May-09

www.vishay.com

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