首页 > SI9435BDY_13

SI9435BDY_13

更新时间：2025-07-03 12:26:08

品牌：VISHAY

描述：P-Channel 30-V (D-S) MOSFET

PDF下载

中文翻译

免费 PCB/SMT

概述
数据手册

如果您发现信息不准确，欢迎纠错

SI9435BDY_13 概述

P-Channel 30-V (D-S) MOSFET P通道30 -V （D -S ）的MOSFET

SI9435BDY_13 数据手册

通过下载SI9435BDY_13数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

Si9435BDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 5.7

- 5.0

- 4.4

Definition

0.042 at V_GS= - 10 V

0.055 at V_GS= - 6 V

0.070 at V_GS= - 4.5 V

•

TrenchFET^®Power MOSFET

Compliant to RoHS Directive 2002/95/EC

- 30

SO-8

Top View

Ordering Information: Si9435BDY-T1-E3 (Lead (Pb)-free)

Si9435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 30

V_GS

T_A= 25 °C

T_A= 70 °C

- 5.7

- 4.6

- 4.1

- 3.2

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

- 30

Continuous Source Current (Diode Conduction)^a

- 2.3

2.5

- 1.1

1.3

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

1.6

0.8

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

R_thJA

Steady State

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72245

S09-0870-Rev. D, 18-May-09

www.vishay.com

Si9435BDY

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.^a

Max.

Unit

Static

V_GS(th)

I_GSS

V_DS= V_GS, I_D= - 250 µA

Gate Threshold Voltage

- 1.0

- 3.0

100

- 1

V_DS= 0 V, V_GS

20 V

Gate-Body Leakage

V_DS= - 30 V, V_GS= 0 V

_DS= - 30 V, V_GS= 0 V, T_J= 70 °C

V_DS≤ - 10 V, V_GS= - 10 V

V_DS≤ - 5 V, V_GS= - 4.5 V

V_GS= - 10 V, I_D= - 5.7 A

I_DSS

Zero Gate Voltage Drain Current

µA

- 5

- 20

- 5

On-State Drain Current^b

I_D(on)

0.033

0.043

0.056

0.042

0.055

0.070

Drain-Source On-State Resistance^b

R_DS(on)

_GS= - 6 V, I_D= - 5 A

_GS= - 4.5 V, I_D= - 4.4 A

Forward Transconductance^b

Diode Forward Voltage^b

Dynamic^a

g_fs

V_DS= - 15 V, I_D= - 5.7 A

I_S= - 2.3 A, V_GS= 0 V

V_SD

- 0.8

- 1.1

Q_g

Q_gs

Q_gd

R_g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

2.3

4.5

8.8

V_DS= - 15 V, V_GS= - 10 V, I_D= - 3.5 A

t_d(on)

t_r

t_d(off)

t_f

_DD= - 15 V, R_L= 15 Ω

I_D≅ - 1 A, V_GEN= - 10 V, R_g= 6 Ω

Turn-Off Delay Time

Fall Time

t_rr

I_F= - 1.2 A, dI/dt = 100 A/µs

Source-Drain Reverse Recovery Time

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 72245

S09-0870-Rev. D, 18-May-09

Si9435BDY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

= 10 V thru 6 V

5 V

4 V

= 125 °C

25 °C

3 V

- 55 °C

oltage (V)

- Gate-to-Source V

- Drain-to-Source Voltage (V)

Transfer Characteristics

Output Characteristics

1100

880

660

440

220

0.15

0.12

0.09

0.06

0.03

iss

= 4.5 V

= 6 V

oss

= 10 V

rss

0.00

- Drain-to-Source Voltage (V)

- Drain Current (A)

Capacitance

On-Resistance vs. Drain Current

1.6

1.4

1.2

1.0

0.8

0.6

= 10 V

= 5.7 A

= 15 V

= 3.5 A

- 50 - 25

100 125 150

0.0

3.2

6.4

9.6

12.8

16.0

- Junction Temperature (°C)

- Total Gate Charge (nC)

On-Resistance vs. Junction Temperature

Gate Charge

Document Number: 72245

S09-0870-Rev. D, 18-May-09

www.vishay.com

Si9435BDY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.20

0.16

0.12

0.08

0.04

0.00

= 5.7 A

= 25 °C

= 150 °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

- Gate-to-Source Voltage (V)

- Source-to-Drain Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

Source-Drain Diode Forward Voltage

0.6

0.4

150

120

= 250 µA

0.2

0.0

- 0.2

- 0.4

-3

-2

-1

- 50 - 25

100 125 150

- Temperature (°C)

Time (s)

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

100

Limited by R

DS(on)

1 ms

10 ms

100 ms

1 s

10 s

0.1

= 25 °C

Single Pulse

0.01

0.1

100

V_DS- Drain-to-Source Voltage (V)

* V_DS> minimum V_GSat which R_DS(on)is specified

Safe Operating Area, Junction-to-Foot

www.vishay.com

Document Number: 72245

S09-0870-Rev. D, 18-May-09

Si9435BDY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Duty Cycle = 0.5

0.2

0.1

Notes:

0.1

0.05

1. Duty Cycle, D =

0.02

2. Per Unit Base = R

= 70 °C/W

thJA

(t)

3. T_JM- T = P

DM thJA

Single Pulse

0.01

4. Surface Mounted

-4

-3

-2

-1

100

600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

0.1

Single Pulse

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?72245.

Document Number: 72245

S09-0870-Rev. D, 18-May-09

www.vishay.com

Package Information

Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

h x 45

0.25 mm (Gage Plane)

All Leads

0.101 mm

0.004"

MILLIMETERS

Max

INCHES

DIM

Min

Max

1.35

0.10

0.35

0.19

4.80

3.80

1.75

0.20

0.51

0.25

5.00

4.00

0.053

0.004

0.014

0.0075

0.189

0.150

0.069

0.008

0.020

0.010

0.196

0.157

A₁

1.27 BSC

0.050 BSC

5.80

0.25

0.50

0°

6.20

0.50

0.93

8°

0.228

0.010

0.020

0°

0.244

0.020

0.037

8°

0.44

0.64

0.018

0.026

ECN: C-06527-Rev. I, 11-Sep-06

DWG: 5498

Document Number: 71192

11-Sep-06

www.vishay.com

VISHAY SILICONIX

TrenchFET^®Power MOSFETs

Application Note 808

Mounting LITTLE FOOT^®, SO-8 Power MOSFETs

Wharton McDaniel

0.288

7.3

Surface-mounted LITTLE FOOT power MOSFETs use

integrated circuit and small-signal packages which have

0.050

1.27

0.088

2.25

been been modified to provide the heat transfer capabilities

required by power devices. Leadframe materials and

design, molding compounds, and die attach materials have

been changed, while the footprint of the packages remains

the same.

0.088

2.25

0.027

0.69

0.078

1.98

0.2

5.07

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix

MOSFETs, (http://www.vishay.com/ppg?72286), for the

basis of the pad design for a LITTLE FOOT SO-8 power

MOSFET. In converting this recommended minimum pad

to the pad set for a power MOSFET, designers must make

two connections: an electrical connection and a thermal

connection, to draw heat away from the package.

Figure 2. Dual MOSFET SO-8 Pad Pattern

With Copper Spreading

The minimum recommended pad patterns for the

single-MOSFET SO-8 with copper spreading (Figure 1) and

dual-MOSFET SO-8 with copper spreading (Figure 2) show

the starting point for utilizing the board area available for the

heat-spreading copper. To create this pattern, a plane of

copper overlies the drain pins. The copper plane connects

the drain pins electrically, but more importantly provides

planar copper to draw heat from the drain leads and start the

process of spreading the heat so it can be dissipated into the

ambient air. These patterns use all the available area

underneath the body for this purpose.

In the case of the SO-8 package, the thermal connections

are very simple. Pins 5, 6, 7, and 8 are the drain of the

MOSFET for a single MOSFET package and are connected

together. In a dual package, pins 5 and 6 are one drain, and

pins 7 and 8 are the other drain. For a small-signal device or

integrated circuit, typical connections would be made with

traces that are 0.020 inches wide. Since the drain pins serve

the additional function of providing the thermal connection

to the package, this level of connection is inadequate. The

total cross section of the copper may be adequate to carry

the current required for the application, but it presents a

large thermal impedance. Also, heat spreads in a circular

fashion from the heat source. In this case the drain pins are

the heat sources when looking at heat spread on the PC

board.

Since surface-mounted packages are small, and reflow

soldering is the most common way in which these are

affixed to the PC board, “thermal” connections from the

planar copper to the pads have not been used. Even if

additional planar copper area is used, there should be no

problems in the soldering process. The actual solder

connections are defined by the solder mask openings. By

combining the basic footprint with the copper plane on the

drain pins, the solder mask generation occurs automatically.

0.288

7.3

0.050

1.27

0.196

5.0

A final item to keep in mind is the width of the power traces.

The absolute minimum power trace width must be

determined by the amount of current it has to carry. For

thermal reasons, this minimum width should be at least

0.020 inches. The use of wide traces connected to the drain

plane provides a low impedance path for heat to move away

from the device.

0.027

0.69

0.078

1.98

0.2

5.07

Figure 1. Single MOSFET SO-8 Pad

Pattern With Copper Spreading

Document Number: 70740

Revision: 18-Jun-07

www.vishay.com

Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

0.022

0.050

(0.559)

(1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

www.vishay.com

Document Number: 72606

Revision: 21-Jan-08

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please

contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free

requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference

to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21

conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

SI9435BDY_13 相关器件

型号	制造商	描述	价格	文档
SI9435DY	KEXIN	P-Channel MOSFET	获取价格
SI9435DY	FAIRCHILD	P-Channel Logic Level PowerTrench MOSFET	获取价格
SI9435DY	ONSEMI	MOSFET P-CH 30V 5.3A 8-SOIC	获取价格
SI9435DY-E3	VISHAY	Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8	获取价格
SI9435DY-T1	VBSEMI	漏源电压Vdss(V):30V;额定电流Id(A):4.1A;最大导通阻抗Ron(mΩ):42mΩ 10V,5.8A;类型:P沟道;最大耗散功率Pd(W):1.3W;栅源耐压Vgs(V):2V 250μA;	获取价格
SI9435DY-T1-E3	VISHAY	Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8	获取价格
SI9435DYD84Z	FAIRCHILD	Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	获取价格
SI9435DYL86Z	FAIRCHILD	Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	获取价格
SI9435DYL99Z	FAIRCHILD	Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	获取价格
SI9436DY	VISHAY	N-Channel 30-V (D-S) MOSFET	获取价格