SIE864DF-T1-GE3 [VISHAY]
TRANSISTOR 23 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POLARPAK-10, FET General Purpose Power;
| 型号： | SIE864DF-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 23 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POLARPAK-10, FET General Purpose Power 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiE864DF
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
45
TrenchFET® Gen III Power MOSFET
Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
0.0056 at V = 10 V
GS
•
•
30
11.9 nC
0.0073 at V = 4.5 V
GS
45
•
Leadframe-Based New Encapsulated Package
- Die Not Exposed
Package Drawing
www.vishay.com/doc?68797
- Same Layout Regardless of Die Size
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
•
•
•
PolarPAK
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
D
Compliant to RoHS directive 2002/95/EC
APPLICATIONS
D
•
•
•
•
VRM, POL
DC/DC Conversion
Server
D
D
S
G
High-Side Switch
G
D
1
G
2
S
3
S
4
D
5
5
4
3
2
1
S
Top View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE864DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?65578
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
20
45a
41
23b, c
18.7b, c
100
20.8
4.3b, c
25
31
25
16
5.2b, c
3.3b, c
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
T
C = 25 °C
TC = 70 °C
A = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
T
A
Pulsed Drain Current
IDM
IS
T
T
C = 25 °C
A = 25 °C
Continuous Source-Drain Diode Current
IAS
EAS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
mJ
W
T
T
C = 25 °C
C = 70 °C
PD
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
www.vishay.com
1
New Product
SiE864DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain Top)
Maximum Junction-to-Case (Source)a, c
Notes:
t ≤ 10 s
RthJA
RthJC (Drain)
RthJC (Source)
20
4
5.5
24
5
7
°C/W
Steady State
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
30
1
V
30
mV/°C
- 5.5
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
2
V
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
µA
A
10
On-State Drain Currenta
25
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
0.0046
0.006
74
0.0056
0.0073
Drain-Source On-State Resistancea
Ω
S
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Input Capacitance
1510
330
130
25
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
Output Capacitance
Reverse Transfer Capacitance
V
DS = 15 V, VGS = 10 V, ID = 20 A
38
18
Qg
Total Gate Charge
11.9
4.1
3.6
1.2
20
nC
Qgs
Qgd
Rg
V
DS = 15 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
0.2
2.4
30
30
40
20
20
15
40
15
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 15 V, RL = 1.5 Ω
17
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
25
12
Turn-On Delay Time
Rise Time
12
ns
A
VDD = 15 V, RL = 1.5 Ω
10
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
25
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 10 A
20.8
100
1.2
45
Body Diode Voltage
0.8
30
24
16
14
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
36
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
New Product
SiE864DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
60
40
20
0
20
16
12
8
V
GS
= 10 V thru 4 V
T
= - 55 °C
C
V
GS
= 3 V
T
C
= 25 °C
4
T
C
= 125 °C
1.5
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
100
30
0.5
1.0
2.0
2.5
3.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
0.008
0.007
0.006
0.005
0.004
0.003
0.002
2000
1600
1200
800
400
0
C
iss
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
20
40
60
80
0
5
10
15
20
25
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 20 A
D
V
DS
= 15 V
V
GS
= 10 V, 4.5 V; I = 20 A
D
V
= 7.5 V
DS
6
V
DS
= 24 V
4
2
0
0
5
10
15
20
25
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
www.vishay.com
3
New Product
SiE864DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
0.016
0.012
0.008
0.004
0.000
100
10
1
I
= 20 A
D
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
T
= 25 °C
J
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
50
40
30
20
10
0
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
Time (s)
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
100 µs
10
1 ms
10 ms
100 ms
1
1 s
10 s
0.1
DC
T
= 25 °C
A
BVDSS Limited
Single Pulse
0.01
0.01
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
New Product
SiE864DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
50
40
30
20
10
0
25
20
15
10
5
Package Limited
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
www.vishay.com
5
New Product
SiE864DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
t
0.02
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68 °C/W
thJA
(t)
3. T - T = P
Z
Single Pulse
JM
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
1
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65578.
www.vishay.com
6
Document Number: 65578
S09-2431-Rev. A, 16-Nov-09
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明