SIHFP15N60L-E3 [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHFP15N60L-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：899K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
Power MOSFET
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
PRODUCT SUMMARY
VDS (V)
600
Available
R
DS(on) (Ω)
VGS = 10 V
0.385
RoHS*
• Lower Gate Charge Results in Simple Drive
Requirements
Qg (Max.) (nC)
100
30
COMPLIANT
Q
Q
gs (nC)
gd (nC)
46
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
Configuration
Single
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
D
• Lead (Pb)-free Available
TO-247
APPLICATIONS
G
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247
IRFP15N60LPbF
SiHFP15N60L-E3
IRFP15N60L
Lead (Pb)-free
SnPb
SiHFP15N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
VGS
30
T
C = 25 °C
15
Continuous Drain Current
VGS at 10 V
ID
TC =100°C
9.7
A
Pulsed Drain Currenta
IDM
60
Linear Derating Factor
2.3
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
320
15
EAR
28
mJ
W
Maximum Power Dissipation
T
C = 25 °C
PD
280
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
10
- 55 to + 150
300d
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
for 10 s
6-32 or M3 screw
10
lbf · in
N · m
Mounting Torque
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 2.9 mH, RG = 25 Ω, IAS = 15 A, dV/dt = 10 V/ns (see fig. 12a).
c. ISD ≤ 15 A, dI/dt ≤ 340 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91204
www.vishay.com
1
S-Pedning-Rev. B, 24-Jun-08
WORK-IN-PROGRESS
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
-
0.24
-
RthCS
-
°C/W
RthJC
0.44
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
600
-
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
0.39
Gate-Source Threshold Voltage
Gate-Source Leakage
3.0
-
5.0
100
50
VGS
VDS = 600 V, VGS = 0 V
DS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.0 Ab
VDS = 50 V, ID = 9.0 A
=
30 V
-
-
nA
µA
mA
Ω
-
-
-
Zero Gate Voltage Drain Current
IDSS
V
-
0.385
-
2.0
0.460
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
8.3
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
2720
260
20
-
-
-
-
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
pF
C
oss eff.
120
VGS = 0 V,
DS = 0 V to 480 Vc
Effective Output Capacitance
(Energy Related)
V
Coss eff. (ER)
-
100
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
-
100
ID = 15 A, VDS = 480 V,
see fig. 7 and 15b
VGS = 10 V
30
46
-
nC
ns
-
20
44
28
5.5
VDD = 300 V, ID = 15 A,
G = 1.8 Ω, VGS = 10 V,
see fig. 11a and 11bb
-
R
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
15
60
A
G
Pulsed Diode Forward Currenta
Body Diode Voltage
ISM
S
VSD
TJ = 25 °C, IS = 15 A, VGS = 0 Vb
TJ = 25 °C, IF = 15 A
-
-
-
-
-
-
-
1.5
200
360
670
1620
8.7
V
130
240
450
1080
5.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
ns
TJ = 125 °C, dI/dt = 100 A/µsb
TJ = 25 °C, IF = 15 A, VGS = 0 Vb
TJ = 125 °C, dI/dt = 100 A/µsb
TJ = 25 °C
Qrr
nC
A
Reverse Recovery Time
Forward Turn-On Time
IRRM
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS
.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS
.
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Document Number: 91204
S-Pedning-Rev. B, 24-Jun-08
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
1000
100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
100
10
T
= 150°C
BOTTOM
J
10
1
1
5.0V
0.1
T
6
= 25°C
J
0.1
0.01
0.01
0.001
V
= 50V
20μs PULSE WIDTH
Tj = 25°C
DS
20μs PULSE WIDTH
0.1
1
10
100
4
8
10
12
14
16
V
, Drain-to-Source Voltage (V)
V
, Gate-to-Source Voltage (V)
DS
GS
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
I
= 15A
D
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V
= 10V
GS
BOTTOM
5.0V
1
0.1
0.01
20μs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
DS
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91204
S-Pedning-Rev. B, 24-Jun-08
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3
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
12.0
10.0
8.0
100000
V
= 0V,
f = 1 MHZ
GS
I = 15A
D
V
V
V
= 480V
= 300V
= 120V
C
= C + C , C SHORTED
DS
DS
DS
iss
gs gd ds
C
= C
rss
gd
10000
1000
100
10
C
= C + C
ds gd
oss
C
iss
C
6.0
oss
C
rss
4.0
2.0
0.0
1
1
10
100
1000
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
G
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
25
100.00
10.00
1.00
20
15
10
5
T
= 150°C
J
T
= 25°C
J
V
= 0V
GS
0
0.10
0
100 200 300 400 500 600 700
Drain-to-Source Voltage (V)
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
, Source-to-Drain Voltage (V)
V
SD
DS,
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91204
S-Pedning-Rev. B, 24-Jun-08
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1000
0.1
1
10
100
10000
V
, Drain-to-Source Voltage (V)
DS
Fig. 9 - Maximum Safe Operating Area
RD
VDS
16
14
12
10
8
VGS
D.U.T.
RG
+
-
V
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 11a - Switching Time Test Circuit
6
4
VDS
90 %
2
0
25
50
T
75
100
125
150
10 %
VGS
, Case Temperature (°C)
C
td(on) tr
td(off) tf
Fig. 11b - Switching Time Waveforms
Fig. 10 - Maximum Drain Current vs. Case Temperature
Document Number: 91204
S-Pedning-Rev. B, 24-Jun-08
www.vishay.com
5
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
600
500
400
300
200
100
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
I
D
TOP
6.7A
9.5A
BOTTOM 15A
I
= 250μA
D
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
T
Starting T , Junction Temperature (°C)
J
J
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
VDS
15 V
tp
Driver
L
VDS
D.U.T
RG
+
-
V
A
DD
IAS
A
IAS
20 V
0.01
Ω
tp
Fig. 14b - Unclamped Inductive Test Circuit
Fig. 14c - Unclamped Inductive Waveforms
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Document Number: 91204
S-Pedning-Rev. B, 24-Jun-08
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 15a - Basic Gate Charge Waveform
Fig. 15b - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
Low stray inductance
• Ground plane
D.U.T
•
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
*
VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91204.
Document Number: 91204
S-Pedning-Rev. B, 24-Jun-08
www.vishay.com
7
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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