SIHP30N60E-GE3 [VISHAY]
E Series Power MOSFET; E系列功率MOSFET
| 型号： | SIHP30N60E-GE3 |
| 厂家： | 
VISHAY |
| 描述： | E Series Power MOSFET |
| 文件： | 总8页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiHP30N60E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
• Low Figure-of-Merit (FOM) Ron x Qg
• Low Input Capacitance (Ciss
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions please
see www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V) at TJ max.
DS(on) max. at 25 °C ()
Qg max. (nC)
650
)
R
VGS = 10 V
0.125
130
15
Q
gs (nC)
gd (nC)
Q
39
Configuration
Single
D
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
TO-220AB
G
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
- LED Lighting
S
D
S
N-Channel MOSFET
G
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP30N60E-E3
SiHP30N60E-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
600
20
V
VGS
30
TC = 25 °C
29
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
18
A
Pulsed Drain Currenta
IDM
65
Linear Derating Factor
Single Pulse Avalanche Energyb
2
690
W/°C
mJ
W
EAS
PD
Maximum Power Dissipation
250
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ, Tstg
- 55 to + 150
37
°C
TJ = 125 °C
dV/dt
V/ns
°C
18
300c
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S12-3103- Rev. E, 24-Dec-12
Document Number: 91456
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
RthJC
-
-
62
°C/W
Maximum Junction-to-Case (Drain)
0.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
600
-
-
-
V
V/°C
V
-
2.0
-
0.64
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
-
4.0
100
1
VGS
=
20 V
-
-
nA
VDS = 600 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = 600 V, VGS = 0 V, TJ = 150 °C
-
-
100
0.125
-
Drain-Source On-State Resistance
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V
ID = 15 A
-
0.104
5.4
VDS = 8 V, ID = 3 A
-
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
-
-
2600
138
3
-
-
-
VGS = 0 V,
VDS = 100 V,
f = 1.0 MHz
pF
nC
Effective Output Capacitance, Energy
Relatedb
Co(er)
Co(tr)
-
-
98
-
-
VDS = 0 V to 480 V, VGS = 0 V
Effective Output Capacitance, Time
Relatedc
346
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
85
15
130
-
V
GS = 10 V
ID = 15 A, VDS = 480 V
39
-
19
40
65
95
75
-
32
V
V
DD = 380 V, ID = 15 A,
GS = 10 V, Rg = 4.7
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
63
36
Gate Input Resistance
Rg
f = 1 MHz, open drain
0.63
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
29
65
A
G
Pulsed Diode Forward Current
ISM
S
Diode Forward Voltage
VSD
trr
TJ = 25 °C, IS = 15 A, VGS = 0 V
-
-
-
-
-
402
7
1.3
605
15
V
ns
μC
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
TJ = 25 °C, IF = IS = 15 A,
dI/dt = 100 A/μs, VR = 20 V
Qrr
IRRM
32
65
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
.
.
S12-3103- Rev. E, 24-Dec-12
Document Number: 91456
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
80
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
70
60
50
40
30
20
10
0
TJ = 25 °C
60
40
20
0
T
J = 25 °C
TJ = 150 °C
BOTTOM 5.0 V
5 V
25
0
5
10
15
20
25
0
5
10
15
20
30
VGS, Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID = 15 A
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
VGS = 10 V
BOTTOM 5.0 V
T
J = 150 °C
20
VDS - Drain-to-Source Voltage (V)
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
0
5
10
15
25
30
TJ - Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S12-3103- Rev. E, 24-Dec-12
Document Number: 91456
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
10 000
1000
100
10
1000
100
10
Ciss
Operation in this area
limited by R
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd x Cds shorted
DS(on)
IDM Limited
Crss = Cgd
Coss = Cds + Cgd
100 μs
1 ms
Coss
1
T
= 25 °C
C
T = 150 °C
Single Pulse
J
10 ms
Crss
BVDSS Limited
1
0.1
0
100
200
300
400
500
600
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 8 - Maximum Safe Operating Area
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
24
30.0
25.0
20.0
15.0
10.0
5.0
ID = 15 A
VDS = 300 V
20
16
12
8
VDS = 120 V
VDS = 480 V
4
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Temperature (°C)
Qg - Total Gate Charge (nC)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
725
700
675
650
625
600
575
550
1000
100
TJ = 150 °C
10
1
TJ = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
80 100 120 140 160
TJ - Temperature (°C)
60
20 40
- 20
0
- 60 - 40
VSD - Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Temperature vs. Drain-to-Source Voltage
S12-3103- Rev. E, 24-Dec-12
Document Number: 91456
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
V
-
DD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 15 - Unclamped Inductive Waveforms
Fig. 12 - Switching Time Test Circuit
VDS
90 %
QG
10 V
QGS
QGD
10 %
VGS
VG
td(on) tr
td(off) tf
Fig. 13 - Switching Time Waveforms
Charge
Fig. 16 - Basic Gate Charge Waveform
L
VDS
Vary tp to obtain
required IAS
Current regulator
Same type as D.U.T.
D.U.T
IAS
RG
+
-
50 kΩ
VDD
12 V
0.2 µF
0.3 µF
10 V
+
-
VDS
0.01 Ω
tp
D.U.T.
VGS
Fig. 14 - Unclamped Inductive Test Circuit
3 mA
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
S12-3103- Rev. E, 24-Dec-12
Document Number: 91456
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
Vishay Siliconix
www.vishay.com
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91456.
S12-3103- Rev. E, 24-Dec-12
Document Number: 91456
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
MIN.
INCHES
MIN.
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
•
Xi’an and Mingxin actual photo
C
b
e
J(1)
e(1)
Revison: 08-Oct-12
Document Number: 71195
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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