SIP4282DVP-1-T1-E3 [VISHAY]
1 A Slew Rate Controlled Load Switch in PPAK SC75-6; 在PPAK SC75-6 1的压摆率受控负载开关
| 型号： | SIP4282DVP-1-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 |
| 文件： | 总9页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiP4282
Vishay Siliconix
1 A Slew Rate Controlled Load Switch in PPAK SC75-6
FEATURES
DESCRIPTION
•
•
1.8 V to 5.5 V Input Voltage range
Very Low RDS(ON), typically 140 mΩ
at 5 V and 175 mΩ at 3 V
Slew rate limited turn-on time options
- SiP4282-1: 1 ms
The SiP4282 is a P-Channel MOSFET power switch IC
designed for high-side load switching applications. The out-
put switching transistor is a P-Channel MOSFET device that
has a 140 mΩ RDS(ON) typically to increase load switching
power handling capacity. The SiP4282 is available in two dif-
ferent versions with turn-on and turn-off characteristics rang-
ing from very fast to slew rate limited. In addition to a fast
turn-off time of 4 µs, the SiP4282-3 version offers a shut-
down load discharge circuit to instantaneously turn off a load
circuit when the switch is disabled.
•
- SiP4282-3: 100 µs
•
•
•
•
•
Fast shutdown load discharge option
Low quiescent current, typically 2.5 µA
Low Shutdown Current < 1 µA
TTL/CMOS input logic level
UVLO of 1.4 V
The SiP4282 load switch operates with an input voltage
ranging from 1.8 V to 5.5 V, making it ideal for both 3 V and
5 V systems. The SiP4282 also features an under-voltage
lock out which turns the switch off when an input undervolt-
age condition exists. Input logic levels are TTL and 2.5 V to
5 V CMOS compatible. This device has a very low operating
current (typically 2.5 µA), making it ideal for battery-powered
applications. In shutdown mode, the supply current
decreases to less than 1 µA.
• SC-75 Package
APPLICATIONS
•
•
•
•
•
•
Cellular telephones
Digital still cameras
Personal digital assistants (PDA)
Hot swap supplies
Notebook computers
Personal communication devices
The SiP4282 is available in a lead (Pb)-free 6 pin PPAK
SC75-6 package and is specified over - 40 °C to 85 °C tem-
• USB
perature range
.
TYPICAL APPLICATION CIRCUIT
V
OUT
OUT
IN
V
V
V
IN
IN
OUT
1
2
6
5
SiP4282
C
1 µF
C
OUT
0.1 µF
IN
4
ON/OFF
GND
ON/OFF
3
GND
GND
SiP4282 Typical Application Circuit
Document Number: 73851
S-70069–Rev. C, 22-Jan-07
www.vishay.com
1
New Product
SiP4282
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
- 0.3 to 6
Unit
Supply Input Voltage (VIN
Enable Input Voltage (VON
Output Voltage (VOUT
)
)
- 0.3 to 6
V
)
- 0.3 to VIN + 0.3
Maximum Continuous Switch Current (IMAX
)
1.2
3
VIN ≥ 2.5 V
VIN < 2.5 V
A
Maximum Pulsed Current (IDM) VIN
1.6
ESD Rating (HBM)
4000
- 40 to 150
V
Junction Temperature (TJ)
°C
a
6 pin PPAK SC75
6 pin PPAK SC75
90
°C/W
mW
Thermal Resistance (θJA
)
Power Dissipation (PD)b
610
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board.
b. Derate 11.1 mW/°C above TA = 70 °C.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Input Voltage Range (VIN
Limit
Unit
V
)
1.8 to 5.5
- 40 to 85
Operating Temperature Range
°C
SPECIFICATIONS
Limits
- 40 °C to 85 °C
Test Conditions Unless Specified
IN = 5.0, TA = - 40 °C to 85 °C
V
Mina
Typb
Maxa
(Typical values are at TA = 25 °C)
Parameter
Symbol
Unit
SiP4282 All Versions
Operating Voltagec
Under Voltage Lockout
Under Voltage Lockout Hysteresis
Quiescent Current
VIN
VUVLO
VUVLO(hyh)
IQ
1.8
-
5.5
1.8
-
V
VIN Falling
1.0
1.4
250
2.5
-
-
-
-
-
-
mV
ON/OFF = active
ON/OFF = inactive, OUT = open
ON/OFF = inactive, VOUT = 0
VIN = 5 V, TA = 25 °C
4
µA
Off Suply Current
IQ(OFF)
ISD(OFF)
1
Off Switch Current
-
1
140
230
V
IN = 4.2 V, TA = 25 °C
-
-
150
250
290
480
-
RDS(on)
On-Resistance
mΩ
V
IN = 3 V, TA = 25 °C
175
VIN = 1.8 V, TA = 25 °C
-
300
On-Resistance Temp-Coefficient
ON/OFF Input Low Voltage
TCRDS
VIL
-
2800
ppm/°C
VIN = 2.7 V to 5.5 Vd
VIN = 2.7 V to ≤ 4.2 V
VIN > 4.2 V to 5.5 V
VON/OFF = 5.5 V
-
-
-
-
-
0.8
-
2
V
VIH
ON/OFF Input High Voltage
2.4
-
-
ON/OFF Input Leakage
SiP4282-1 Version
ISINK
µA
1
Output Turn-On Delay Time
TD(ON)
T(ON)
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
-
-
-
20
1000
4
40
1500
10
Output Turn-On Rise Time
Output Turn-Off Delay Time
µs
TD(OFF)
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Document Number: 73851
S-70069–Rev. C, 22-Jan-07
New Product
SiP4282
Vishay Siliconix
SPECIFICATIONS
Limits
Test Conditions Unless Specified
- 40 °C to 85 °C
V
IN = 5.0, TA = - 40 °C to 85 °C
Mina
Typb
Maxa
(Typical values are at TA = 25 °C)
Parameter
Symbol
Unit
SiP4282-3 Version
Output Turn-On Delay Time
TD(ON)
T(ON)
TD(OFF)
RPD
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
ON/OFF = Inactive, TA = 25 °C
-
-
-
-
20
100
4
40
150
10
Output Turn-On Rise Time
Output Turn-Off Delay Time
Output Pull-Down Resistance
µs
Ω
150
250
Notes:
a) The algebriac convention whereby the most negative value is a minimum and the most positive a maximum.
b) Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
c) Part requires minimum start-up of VIN ≥ 2.0 V to ensure operation down to 1.8 V.
d) For VIN outside this range consult typical ON/OFF threshold curve.
PIN CONFIGURATION
1
2
3
V
V
OUT
OUT
6
IN
5
4
IN
GND
ON/OFF
Bottom View
PPAK SC75-6 Package
PIN DESCRIPTION
Pin Number
PPAK SC75-6
Name
VIN
Function
1, 2
3
This pin is the P-Channel MOSFET source connection. Bypass to ground through a 1 µF capacitor.
GND
Ground Connection
4
ON/OFF
OUT
Enable Input
5, 6
This pin is the P-Channel MOSFET drain connection. Bypass to ground through a 0.1 µF capacitor.
SELECTION GUIDE
Slew Rate
(typ)
Active
Part Number
SiP4282-1-T1-E3
SiP4282-3-T1-E3
Pull Down
Enable
1 ms
No
Active high
Active high
100 µs
Yes
ORDERING INFORMATION
Part Number
Marking
L7XXX
L9XXX
Temperature Range
Package
SiP4282DVP-1-T1-E3
SiP4282DVP-3-T1-E3
PPAK SC75-6
PPAK SC75-6
- 40 °C to 85 °C
Notes:
XXX = Lot Code
Document Number: 73851
S-70069–Rev. C, 22-Jan-07
www.vishay.com
3
New Product
SiP4282
Vishay Siliconix
TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted
3.5
3
3.5
3
V
IN
= 5 V
2.5
2
2.5
2
1.5
1
1.5
1
V
IN
= 3 V
0.5
0
0.5
0
1
2
3
4
5
6
- 40
- 15
10
Temperature (°C)
Quiescent Current vs. Temperature
35
60
85
V
(V)
IN
Quiescent Current vs. Input Voltage
550
500
450
400
350
300
250
200
150
100
250
I
= 500 mA
LOAD
1 A
200
150
100
50
V
= 3 V
IN
V
= 5 V
IN
500 mA
100 mA
0
- 40
- 15
10
Temperature (°C)
RDS(ON) vs. Temperature
35
60
85
1.5
2
2.5
3
3.5
(V)
4
4.5
5
5.5
V
IN
RDS(ON) vs. Input Voltage
100
2.2
2
80
60
40
20
0
1.8
1.6
1.4
1.2
1
V
IH
V
IL
0.8
0.6
0.4
- 40
- 15
10
Temperature (°C)
Off Switch Current vs. Temperature
35
60
85
1.5
2
2.5
3
3.5
(V)
4
4.5
5
5.5
V
IN
ON/OFF Threshold vs. Input Voltage
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Document Number: 73851
S-70069–Rev. C, 22-Jan-07
New Product
SiP4282
Vishay Siliconix
TYPICAL WAVEFORMS
ON/OFF (5 V/div.)
V
OUT
(2 V/div.)
I
IN
(200 mA/div.)
Time (5 µs/div)
SiP4282-1 Turn-Off (VIN = 3 V, RLOAD = 6 Ω)
SiP4282-1 Turn-On (VIN = 3 V, RLOAD = 6 Ω)
ON/OFF (5 V/div.)
ON/OFF (5 V/div.)
V
OUT
(2 V/div.)
V
OUT
(2 V/div.)
I
IN
(200 mA/div.)
I
IN
(200 mA/div.)
Time (5 µs/div)
Time (500 µs/div)
SiP4282-1 Turn-Off (VIN = 5 V, RLOAD = 10 Ω)
SiP4282-1 Turn-On (VIN = 5 V, RLOAD = 10 Ω)
Document Number: 73851
S-70069–Rev. C, 22-Jan-07
www.vishay.com
5
New Product
SiP4282
Vishay Siliconix
TYPICAL WAVEFORMS
ON/OFF (5 V/div.)
ON/OFF (5 V/div.)
(2 V/div.)
(2 V/div.)
(200 mA/div.)
(200 mA/div.)
Time (50 µs/div)
Time (5 µs/div)
SiP4282-3 Turn-Off (VIN = 3 V, RLOAD = 6 Ω)
SiP4282-3 Turn-On (VIN = 3 V, RLOAD = 6 Ω)
ON/OFF (5 V/div.)
ON/OFF (5 V/div.)
(2 V/div.)
(200 mA/div.)
(2 V/div.)
(200 mA/div.)
Time (50 µs/div)
Time (5 µs/div)
SiP4282-3 Turn-Off (VIN = 5 V, RLOAD = 10 Ω)
SiP4282-3 Turn-On (VIN = 5 V, RLOAD = 10 Ω)
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Document Number: 73851
S-70069–Rev. C, 22-Jan-07
New Product
SiP4282
Vishay Siliconix
BLOCK DIAGRAM
V
OUT
IN
Under
Voltage
Lockout
Turn-On
Slew Rate
Control
Level
Shift
ON/OFF
SiP4282-3 version only
GND
SiP4282 Functional Block Diagram
DETAILED DESCRIPTION
APPLICATION INFORMATION
The SiP4282 is a P-Channel MOSFET power switches
designed for high-side slew rate controlled load-switching
applications. Once turned on, the slew-rate control circuitry
is activated and current is ramped in a linear fashion until it
reaches the level required for the output load condition. This
is accomplished by first elevating the gate voltage of the
MOSFET up to its threshold voltage and then by linearly
increasing the gate voltage until the MOSFET becomes fully
enhanced. At this point, the gate voltage is then quickly
increased to the full input voltage to reduce RDS(ON) of the
MOSFET switch and minimize any associated power losses.
Input Capacitor
While a bypass capacitor on the input is not required, a 1 µF
or larger capacitor for CIN is recommended in almost all
applications. The Bypass capacitor should be placed as
physically close as possible to the SiP4282 to be effective in
minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to with-
stand input current surges from low impedance sources such
as batteries in portable devices.
Output Capacitor
A 0.1 µF capacitor or larger across VOUT and GND is recom-
mended to insure proper slew operation. COUT may be
increased without limit to accommodate any load transient
condition with only minimal affect on the SiP4282 turn on
slew rate time. There are no ESR or capacitor type require-
ment.
The SiP4282-1 version has a modest 1 ms turn on slew rate
feature, which significantly reduces in-rush current at turned
on time and permits the load switch to be implemented with
a small input capacitor, or no input capacitor at all, saving
cost and space. In addition to a 100 µs minimized slew rate,
the SIP4282-3 features a shutdown output discharge circuit
which is activated at shutdown (when the part is disabled
through the ON/OFF pin) and discharges the output pin
through a small internal resistor hence, turning off the load.
In instances where the input voltage falls below 1.4 V (typi-
cally) the under voltage lock-out circuitry protects the MOS-
FET switch from entering the saturation region or operation
by shutting down the chip.
Enable
The ON/OFF pin is compatible with both TTL and CMOS
logic voltage levels.
Document Number: 73851
S-70069–Rev. C, 22-Jan-07
www.vishay.com
7
New Product
SiP4282
Vishay Siliconix
It then follows that, assuming an ambient temperature of
Protection Against Reverse Voltage Condition
70 °C, the maximum power dissipation will be limited to about
610 mW.
The P-channel MOSFET pass transistor has an intrinsic
diode that is reversed biased when the input voltage is
greater than the output voltage. Should VOUT exceed VIN,
this intrinsic diode will become forward biased and allow
excessive current to flow into the IC thru the VOUT pin and
potentially damage the IC device. Therefore extreme care
should be taken to prevent VOUT from exceeding VIN.
So long as the load current is below the 1.2 A limit, the max-
imum continuous switch current becomes a function two
things: the package power dissipation and the RDS(ON) at the
ambient temperature.
As an example let us calculate the worst case maximum load
current at TA = 70 °C. The worst case RDS(ON) at 25 °C
occurs at an input voltage of 1.8 V and is equal to 480 mΩ.
The RDS(ON) at 70 °C can be extrapolated from this data
using the following formula
In conditions where VOUT exceeds VIN a Schottky diode in
parallel with the internal intrinsic diode is recommended to
protect the SiP4282.
Thermal Considerations
The SiP4282 is designed to maintain a constant output load
current. Due to physical limitations of the layout and assem-
bly of the device the maximum switch current is 1.2 A, as
stated in the ABS MAX table. However, another limiting char-
acteristic for the safe operating load current is the thermal
power dissipation of the package. To obtain the highest
power dissipation (and a thermal resistance of 90 °C/W) the
power pad of the device should be connected to a heat sink
on the printed circuit board.
RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT)
Where TC is 3300 ppm/°C. Continuing with the calculation
we have
RDS(ON) (at 70 °C) = 480 mΩ x (1 + 0.0033 x (70 °C - 25 °C))
= 551 mΩ
The maximum current limit is then determined by
The maximum power dissipation in any application is depen-
dant on the maximum junction temperature, TJ(MAX)
=
P (max)
125 °C, the junction-to-ambient thermal resistance for the
SC-75 PPAK package, θJ-A = 90 °C/W, and the ambient tem-
perature, TA, which may be formulaically expressed as:
I
(max) 〈
LOAD
R
(
)
DS ON
which in case is 1.05 A. Under the stated input voltage con-
dition, if the 1.05 A current limit is exceeded the internal die
temperature will rise and eventually, possibly damage the
device.
TJ (max) − T
125 − T
90
A
A
P (max)
=
=
θ
J−A
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73851.
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Document Number: 73851
S-70069–Rev. C, 22-Jan-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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