SIR800DP-T1-GE3 [VISHAY]
N-Channel 20 V (D-S) MOSFET; N沟道20 V （D -S ）的MOSFET
| 型号： | SIR800DP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20 V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiR800DP
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
50
Definition
0.0023 at VGS = 10 V
0.0026 at VGS = 4.5 V
0.0034 at VGS = 2.5 V
•
•
•
•
TrenchFET® Gen III Power MOSFET
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
20
50
41 nC
50
PowerPAK® SO-8
APPLICATIONS
•
•
•
•
•
DC/DC
Low Voltage Drive
POL
OR-ing
Fixed Telecom
S
6.15 mm
5.15 mm
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
Ordering Information: SiR800DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
20
Unit
V
A
VGS
12
50a
50a
35.4b, c
28.2b, c
80
50a
6.2b, c
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
30
EAS
mJ
W
45
69
TC = 70 °C
44.4
PD
Maximum Power Dissipation
5.2b, c
3.3b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
RthJA
t ≤ 10 s
19
24
°C/W
Steady State
RthJC
1.2
1.8
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
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1
New Product
SiR800DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
20
V
V
DS Temperature Coefficient
18
mV/°C
VGS(th) Temperature Coefficient
- 4.1
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.6
40
1.5
100
1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
ID(on)
VGS = 10 V, ID = 15 A
0.0019
0.0021
0.0028
96
0.0023
0.0026
0.0034
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = 4.5 V, ID = 12 A
GS = 2.5 V, ID = 10 A
Ω
Forward Transconductancea
gfs
VDS = 10 V, ID = 15 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5125
1050
510
89
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
pF
133
62
Qg
Total Gate Charge
41
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
7.4
7.6
1.2
13
0.4
2.4
25
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8
16
V
DD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
54
100
20
10
ns
Turn-On Delay Time
Rise Time
27
50
15
30
V
DD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
70
120
50
27
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 5 A
50
80
1.1
60
34
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.65
30
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
17
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
16
ns
tb
14
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
10
8
VGS = 10 V thru 2 V
64
48
32
16
0
6
TC = 25 °C
4
2
TC = 125 °C
0.6
TC = - 55 °C
0
0
0.5
1.0
1.5
2.0
2.5
0
1.2
1.8
2.4
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0034
0.0030
0.0026
0.0022
0.0018
0.0014
6800
5440
4080
2720
1360
0
Ciss
VGS = 2.5 V
VGS = 4.5 V
Coss
VGS = 10 V
Crss
0
16
32
48
64
80
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
10
ID = 15 A
ID = 15 A
8
6
4
2
0
VGS = 10 V
VGS = 2.5 V
VDS = 5 V
VDS = 10 V
VDS = 15 V
0
19
38
57
76
95
- 50 - 25
0
25
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
75
100 125 150
Qg - Total Gate Charge
Gate Charge
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
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New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.0080
ID = 15 A
10
0.0064
0.0048
0.0032
0.0016
0
TJ = 150 °C
1
TJ = 25 °C
TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
0.1
200
160
120
80
- 0.1
- 0.3
- 0.5
- 0.7
ID = 5 mA
ID = 250 μA
40
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
TJ - Junction Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
*
Limited by RDS(on)
1 ms
10
10 ms
100 ms
1
1 s
10 s
0.1
DC
BVDSS Limited
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
120
90
60
30
0
Package Limited
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
90
72
54
36
18
0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
www.vishay.com
5
New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
0.05
t1
t2
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = RthJA = 65 °C/W
(t)
3. TJM - TA = PDMZthJA
Single Pulse
10-2
4. Surface Mounted
0.01
10-4
10-3
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65738.
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Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
相关型号：
SIR804DP-T1-GE3
Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
VISHAY
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