SIR818ADP-T1-GE3 [VISHAY]
Power Field-Effect Transistor;
| 型号： | SIR818ADP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总7页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiR818ADP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
VDS (V)
RDS(on) () Max.
0.0025 at VGS = 10 V
0.0030 at VGS = 4.5 V
Qg (Typ.)
I
D (A)a
50
•
Material categorization:
30
39 nC
50
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
S
Bottom View
N-Channel MOSFET
Ordering Information:
SiR818ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
50a
50a
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
33.3b, c
TA = 25 °C
TA = 70 °C
26.6b, c
80
50a
4.5b, c
30
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
EAS
mJ
W
45
50
32
5b, c
3.2b, c
T
C = 25 °C
TC = 70 °C
A = 25 °C
PD
Maximum Power Dissipation
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
Maximum
Unit
t 10 s
20
2
25
°C/W
Steady State
RthJC
2.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 62653
S12-0974-Rev. A, 30-Apr-12
www.vishay.com
1
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR818ADP
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
30
mV/°C
VGS(th) Temperature Coefficient
- 5.2
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.2
40
2.5
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
VGS = 10 V, ID = 10 A
0.0020
0.0024
77
0.0025
0.0030
Drain-Source On-State Resistancea
Forward Transconductancea
S
V
GS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 10 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5035
595
426
80.5
39
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
pF
120
59
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
11.4
12.6
1
0.3
2
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
19
38
30
85
22
60
80
85
34
15
V
DD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
Fall Time
43
11
ns
Turn-On Delay Time
Rise Time
32
41
V
DD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
44
17
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 5 A
50
80
1.1
50
30
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.71
27
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
17
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
13.5
13.5
ns
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 62653
S12-0974-Rev. A, 30-Apr-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR818ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
64
48
32
16
0
80
64
48
32
16
0
VGS = 10 V thru 4 V
TC = 25 °C
VGS = 3 V
TC = 125 °C
TC = - 55 °C
VGS = 2 V
2.0
0.0
0.5
1.0
1.5
2.5
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0027
0.0025
0.0023
0.0021
0.0019
0.0017
6800
5440
4080
2720
1360
0
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
5
10
15
20
25
30
0
16
32
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
48
64
80
VDS - Drain-to-Source Voltage (V)
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 10 A
ID = 10 A
VGS = 10 V
8
6
4
2
0
VDS = 15 V
V
DS = 20 V
VDS = 10 V
VGS = 4.5 V
0
17
34
51
68
85
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62653
S12-0974-Rev. A, 30-Apr-12
www.vishay.com
3
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR818ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
0.010
0.008
0.006
0.004
0.002
0.000
ID = 10 A
TJ = 150 °C
TJ = 25 °C
1
0.1
TJ = 125 °C
0.01
0.001
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
200
160
120
80
- 0.1
- 0.4
- 0.7
- 1.0
ID = 5 mA
ID = 250 μA
40
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
ID Limited
10
1 ms
10 ms
100 ms
1
0.1
Limited by RDS(on)
*
1 s
10 s
TA = 25 °C
Single Pulse
DC
BVDSS Limited
10
0.01
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 62653
S12-0974-Rev. A, 30-Apr-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR818ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
96
72
48
Limited by Package
24
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
60
48
36
24
12
0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
TC - Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62653
S12-0974-Rev. A, 30-Apr-12
www.vishay.com
5
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR818ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
0.01
0.0001
0.001
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62653.
www.vishay.com
6
Document Number: 62653
S12-0974-Rev. A, 30-Apr-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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