SIR812DP-T1-GE3 [VISHAY]
N-Channel 30 V (D-S) MOSFET; N沟道30 V （D -S ）的MOSFET
| 型号： | SIR812DP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30 V (D-S) MOSFET |
| 文件： | 总9页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiR812DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) () Max.
0.00145 at VGS = 10 V
0.00165 at VGS = 4.5 V
Qg (Typ.)
I
D (A)a
60
Definition
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
30
109 nC
60
Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
APPLICATIONS
•
•
•
•
Motor Control
Industrial
Load Switch
ORing
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
5
G
Bottom View
Ordering Information:
N-Channel MOSFET
S
SiR812DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
60a
60a
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
48.9b, c
TA = 25 °C
TA = 70 °C
39b, c
100
60a
5.6b, c
25
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
EAS
mJ
W
31.2
104
T
C = 25 °C
TC = 70 °C
A = 25 °C
66.6
PD
Maximum Power Dissipation
6.25b, c
4b, c
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
15
Maximum
Unit
t 10 s
20
°C/W
Steady State
RthJC
0.9
1.2
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
34
mV/°C
VGS(th) Temperature Coefficient
- 5.7
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1
2.3
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
50
VGS = 10 V, ID = 20 A
0.00110 0.00145
0.00135 0.00165
121
Drain-Source On-State Resistancea
Forward Transconductancea
S
V
GS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
10 240
1130
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 20 A
pF
1180
223
109
22.8
43.3
1.05
15
335
164
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS = 15 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
0.3
2
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
30
16
32
V
DD = 15 V, RL = 0.75
ID 20 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
Fall Time
80
150
40
20
ns
Turn-On Delay Time
Rise Time
43
80
102
70
180
120
60
V
DD = 15 V, RL = 0.75
ID 20 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
32
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 5 A
60
100
1.1
76
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.68
38
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
23
46
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
17
ns
tb
21
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
100
80
60
40
20
0
VGS = 10 V thru 3 V
8
6
4
TC = 25 °C
2
TC = 125 °C
TC = - 55 °C
VGS = 2 V
2.0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0015
0.0014
0.0013
0.0012
0.0011
0.0010
15 000
12 000
9000
6000
3000
0
Ciss
VGS = 4.5 V
Coss
Crss
VGS = 10 V
0
10
20
30
40
50
0
5
10
15
20
25
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 20 A
ID = 20 A
VGS = 10 V
8
VDS = 15 V
6
VDS = 10 V
VGS = 4.5 V
4
VDS = 20 V
2
0
- 50
- 25
0
25
50
75
100
125
150
0
50
100
150
200
250
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.005
0.004
0.003
0.002
0.001
0.000
ID = 20 A
10
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
200
160
120
80
0
- 0.2
- 0.4
- 0.6
- 0.8
ID = 5 mA
ID = 250 μA
40
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
1 ms
ID Limited
10
10 ms
Limited by RDS(on)
*
1
100 ms
1 s
0.1
10 s
TA = 25 °C
Single Pulse
DC
BVDSS Limited
10
0.01
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
220
176
132
88
Limited by Package
44
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
3.0
125
100
75
50
25
0
2.4
1.8
1.2
0.6
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 54 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63551.
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Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
W
1
1
2
3
4
Z
2
3
4
D
L1
E3
A1
Backside View of Single Pad
L
H
K
E2
E4
2
E1
E
Detail Z
1
2
3
4
D1
D2
Notes
1. Inch will govern.
E3
2
Dimensions exclusive of mold gate burrs.
Backside View of Dual Pad
3. Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
INCHES
NOM.
0.041
DIM.
MIN.
NOM.
1.04
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
MIN.
0.038
0
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
A
0.97
A1
-
-
b
0.33
0.23
5.05
4.80
3.56
1.32
0.41
0.013
0.009
0.199
0.189
0.140
0.052
0.016
c
0.28
0.011
D
5.15
0.203
D1
4.90
0.193
D2
3.76
0.148
D3
1.50
0.059
D4
0.57 typ.
3.98 typ.
6.15
0.0225 typ.
0.157 typ.
0.242
D5
E
6.05
5.79
3.30
3.48
3.68
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.246
0.236
0.144
0.151
0.154
E1
5.89
0.232
E2 (for AL product)
3.48
0.137
E2 (for other product)
3.66
0.144
E3
3.78
0.149
E4 (for AL product)
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
-
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
-
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
H
0.56
0.51
0.51
0.06
0°
-
0.022
0.020
0.020
0.002
0°
-
0.61
0.71
0.71
0.20
12°
0.024
0.028
0.028
0.008
12°
L
0.61
0.024
L1
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 typ.
0.005 typ.
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
Document Number: 71655
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.024
(0.61)
0.026
(0.66)
0.050
(1.27)
0.032
(0.82)
0.040
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72599
Revision: 21-Jan-08
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15
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
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