SIR8314-24C [EVERLIGHT]

Infrared LED, ROHS COMPLIANT, PLASTIC PACKAGE-2;
SIR8314-24C
型号: SIR8314-24C
厂家: EVERLIGHT ELECTRONICS CO., LTD    EVERLIGHT ELECTRONICS CO., LTD
描述:

Infrared LED, ROHS COMPLIANT, PLASTIC PACKAGE-2

光电
文件: 总7页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Technical Data Sheet  
5mm Infrared LED, T-1 3/4  
SIR8314-24C  
Features  
High reliability  
2.54mm lead spacing  
Low forward voltage  
Good spectral matching  
to Si photodetector  
Pb free  
The product itself will remain within RoHS compliant version.  
Descriptions  
EVERLIGHT’S Infrared Emitting Diode(SIR8314-24C)  
is a high intensity diode , molded in a water clear plastic  
package.  
The device is spectrally matched with phototransistor , photodiode  
and infrared receiver module.  
Applications  
Sensor  
Device Selection Guide  
Chip  
LED Part No.  
Lens Color  
Material  
SIR8314-24C  
Water clear  
GaAlAs  
Everlight Electronics Co., Ltd.  
Device No DIR-0000047  
http://www.everlight.com  
Prepared date 08-14-2008  
Rev 1  
Page: 1 of 7  
Prepared by Daniel Yang  
SIR8314-24C  
Package Dimensions  
Notes: 1.All dimensions are in millimeters  
2.Tolerances unless dimensions ±0.25mm  
Absolute Maximum Ratings (Ta=25)  
Parameter  
Symbol  
Rating  
100  
Units  
mA  
Continuous Forward Current  
IF  
A
V
Peak Forward Current  
Reverse Voltage  
*1  
IFP  
1.0  
VR  
5
Operating Temperature  
Storage Temperature  
Soldering Temperature  
Topr  
Tstg  
Tsol  
Pd  
-40 ~ +100  
-40 ~ +100  
260  
*2  
mW  
Power Dissipation at(or below)  
210  
25Free Air Temperature  
Notes: *1:IFP Conditions--Pulse Width100μs and Duty1%.  
*2:Soldering time10 seconds.  
Everlight Electronics Co., Ltd.  
Device No DIR-0000047  
http://www.everlight.com  
Prepared date 08-14-2008  
Rev 1  
Page: 2 of 7  
Prepared by Daniel Yang  
SIR8314-24C  
Electro-Optical Characteristics (Ta=25)  
Parameter  
Symbol  
Condition  
Min. Typ. Max. Unit  
IF=20mA  
3.5  
--  
5.0  
25  
--  
--  
Ie  
mW/sr  
Radiant Intensity  
IF=100mA  
Pulse Width 100 s and Duty 1%  
λp  
IF=20mA  
IF=20mA  
IF=20mA  
nm  
nm  
Peak Wavelength  
--  
--  
--  
875  
80  
--  
--  
Δλ  
Spectral Bandwidth  
1.3  
1.4  
1.6  
V
Forward Voltage  
VF  
IF=100mA  
Pulse Width 100 s and Duty 1%  
--  
1.8  
VR=5V  
--  
--  
--  
10  
--  
μA  
Reverse Current  
View Angle  
IR  
2θ1/2  
IF=20mA  
45  
deg  
ConditionIF=20mA  
UnitmW/sr  
Bin Number  
E
F
Min~ Max  
3.5~5.0  
4.6~7.0  
Everlight Electronics Co., Ltd.  
Device No DIR-0000047  
http://www.everlight.com  
Prepared date 08-14-2008  
Rev 1  
Page: 3 of 7  
Prepared by Daniel Yang  
SIR8314-24C  
Typical Electro-Optical Characteristics Curves  
Fig.1 Forward Current vs.  
Ambient Temperature  
Fig.2 Spectral Distributio  
n
100  
80  
IF=20mA  
Ta=25°C  
60  
40  
20  
0
0
905 925 945 965 985  
810  
835 855 875  
40 60 80 100 120  
-40 -20 0 20  
Fig.3 Peak Emission Wavelength  
Ambient Temperature  
Fig.4 Forward Current  
vs. Forward Voltage  
920  
4
10  
900  
3
2
1
10  
10  
10  
875  
860  
84  
0
-25  
0
50  
75 100  
25  
0
1
2
3
4
Everlight Electronics Co., Ltd.  
Device No DIR-0000047  
http://www.everlight.com  
Prepared date 08-14-2008  
Rev 1  
Page: 4 of 7  
Prepared by Daniel Yang  
SIR8314-24C  
Typical Electro-Optical Characteristics Curves  
Fig.5 Relative Radiant Intensity vs.  
Angular Displacement  
-20  
0
10  
20  
-10  
30  
40  
1.0  
0.9  
50  
60  
0.8  
0.7  
70  
80  
0.6 0.4 0.2 0 0.2 0.4 0.6  
Everlight Electronics Co., Ltd.  
Device No DIR-0000047  
http://www.everlight.com  
Prepared date 08-14-2008  
Rev 1  
Page: 5 of 7  
Prepared by Daniel Yang  
SIR8314-24C  
Reliability Test Item And Condition  
The reliability of products shall be satisfied with items listed below.  
Confidence level90%  
LTPD10%  
NO. Item  
Test Conditions  
Test Hours/ Sample Failure  
Ac/Re  
Cycles  
Sizes  
Judgment  
Criteria  
TEMP.260℃±5℃  
1 Solder Heat  
10secs  
22pcs  
0/1  
0/1  
IRU×2  
H : +100℃  
15mins  
2 Temperature Cycle  
300Cycles 22pcs  
300Cycles 22pcs  
IeL×0.8  
VFU×1.2  
5mins  
L : -40℃  
15mins  
H :+100℃  
5mins  
3 Thermal Shock  
0/1  
UUpper  
10secs  
5mins  
L :-10℃  
Specification  
Limit  
4 High Temperature IF=20mA  
1000hrs  
1000hrs  
22pcs  
22pcs  
0/1  
0/1  
0/1  
LLower  
TEMP.+100℃  
Life Test  
Specification  
Limit  
5 Low Temperature IF=20mA  
TEMP.-40℃  
Life Test  
6 DC Operating Life IF=20mA  
1000hrs  
1000hrs  
22pcs  
22pcs  
85/85 %.RH  
7 High Temp. / High  
Hum  
Everlight Electronics Co., Ltd.  
Device No DIR-0000047  
http://www.everlight.com  
Prepared date 08-14-2008  
Rev 1  
Page: 6 of 7  
Prepared by Daniel Yang  
SIR8314-24C  
Packing Quantity Specification  
1.500PCS/1Bag5Bags/1Box  
2.10Boxes/1Carton  
Label Form Specification  
CPN: Customer’s Production Number  
P/N : Production Number  
QTY: Packing Quantity  
CAT: Ranks  
RoHS  
SIR8314-24C  
HUE: Peak Wavelength  
REF: Reference  
LOT No: Lot Number  
MADE IN TAIWAN: Production Place  
Notes  
1. Above specification may be changed without notice. EVERLIGHT will reserve authority on  
material change for above specification.  
2. When using this product, please observe the absolute maximum ratings and the instructions  
for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for  
any damage resulting from use of the product which does not comply with the absolute  
maximum ratings and the instructions included in these specification sheets.  
3. These specification sheets include materials protected under copyright of EVERLIGHT  
corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s  
consent.  
EVERLIGHT ELECTRONICS CO., LTD.  
Office: No 25, Lane 76, Sec 3, Chung Yang Rd,  
Tucheng, Taipei 236, Taiwan, R.O.C  
Tel: 886-2-2267-2000, 2267-9936  
Fax: 886-2267-6244, 2267-6189, 2267-6306  
http://www.everlight.com  
Everlight Electronics Co., Ltd.  
Device No DIR-0000047  
http://www.everlight.com  
Prepared date 08-14-2008  
Rev 1  
Page: 7 of 7  
Prepared by Daniel Yang  

相关型号:

SIR836DP

N-Channel 40-V (D-S) MOSFET
VISHAY

SIR836DP-T1-GE3

N-Channel 40-V (D-S) MOSFET
VISHAY

SIR838DP-T1-GE3

N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel
VISHAY

SIR841500

New Solid State Relay compact size pitch 22,5mm
CELDUC

SIR842500

New Solid State Relay compact size pitch 22,5mm
CELDUC

SIR844DP-T1-GE3

MOSFET N-CH D-S 25V 8-SOIC
VISHAY

SIR846ADP

N-Channel 100 V (D-S) MOSFET
VISHAY

SIR846DP

N-Channel 100-V (D-S) MOSFET
VISHAY

SIR846DP-T1-GE3

N-Channel 100-V (D-S) MOSFET
VISHAY

SIR850DP

N-Channel 25-V (D-S) MOSFET
VISHAY

SIR850DP-T1-GE3

Trans MOSFET N-CH 25V 20.1A 8-Pin PowerPAK SO T/R
VISHAY

SIR852160-WJ

New Solid State Relay compact size pitch 22,5mm with spring terminals
CELDUC