SIR836DP-T1-GE3 [VISHAY]
N-Channel 40-V (D-S) MOSFET; N通道40 -V （D -S ）的MOSFET
| 型号： | SIR836DP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 40-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiR836DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a, e
21
Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
0.019 at VGS = 10 V
0.0225 at VGS = 4.5 V
PowerPAK SO-8
•
•
•
40
5.8 nC
19.6
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
POL
D
S
6.15 mm
5.15 mm
1
S
Synchronous Rectification
2
S
3
G
4
D
8
G
D
7
D
6
D
5
S
Bottom View
Ordering Information: SiR836DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
40
Unit
V
VGS
20
T
C = 25 °C
TC = 70 °C
A = 25 °C
21
17
Continuous Drain Current (TJ = 150 °C)
ID
10.6b, c
8.5b, c
50
T
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
14
3.5b, c
10
Continuous Source-Drain Diode Current
T
A = 25 °C
L = 0.1 mH
C = 25 °C
IAS
Single Pulse Avalanche Current
Avalanche Energy
EAS
mJ
W
5
T
15.6
10
3.9b, c
2.5b, c
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Maximum Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)f, g
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
Typical
27
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
32
°C/W
6.4
8.0
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 70 °C/W.
e. Package limited.
f. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65543
S10-0040-Rev. A, 11-Jan-10
www.vishay.com
1
New Product
SiR836DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 1 mA
ID = 250 µA
Drain-Source Breakdown Voltage
40
V
V
DS Temperature Coefficient
50
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 4.8
VDS = VGS , ID = 250 µA
1.2
30
2.5
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 40 V, VGS = 0 V
DS = 40 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
0.015
0.018
35
0.019
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 7 A
0.0225
Forward Transconductancea
VDS = 15 V, ID = 10 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
600
100
50
V
DS = 20 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 20 V, VGS = 10 V, ID = 10 A
11.8
5.8
1.6
2.1
2.4
14
18
9
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
VDS = 20 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
0.5
4.8
28
38
34
22
16
26
30
18
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
19
V
DD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
17
11
ns
Turn-On Delay Time
Rise Time
8
13
V
DD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
15
9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 3 A
14
50
1.1
30
15
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.77
15
7.5
8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
7
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65543
S10-0040-Rev. A, 11-Jan-10
New Product
SiR836DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
8
V
= 10 V thru 4 V
GS
40
30
20
10
0
6
V
= 3 V
GS
4
T
C
= 25 °C
2
T
C
= 125 °C
1
T
C
= - 55 °C
3
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
800
640
480
320
160
0
0.025
0.022
0.019
0.016
0.013
0.010
C
iss
V
= 4.5 V
GS
V
GS
= 10 V
C
oss
C
rss
0
8
16
24
32
40
0
10
20
30
40
50
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
2.0
1.7
1.4
1.1
0.8
0.5
I
= 10 A
I
= 10 A
D
D
V
GS
= 10 V
V
DS
= 20 V
6
V
GS
= 4.5 V
V = 30 V
DS
V
DS
= 10 V
4
2
0
0.0
2.5
5.0
7.5
10.0
12.5
- 50 - 25
0
T
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
- Junction Temperature (°C)
J
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 65543
S10-0040-Rev. A, 11-Jan-10
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New Product
SiR836DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
0.080
I
= 10 A
D
0.064
0.048
0.032
0.016
0.000
T
J
= 150 °C
T
J
= 25 °C
0.1
0.01
T
J
= 125 °C
= 25 °C
T
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
0.3
0.1
- 0.1
- 0.3
- 0.5
- 0.7
I
= 5 mA
D
40
I
= 250 µA
D
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
- Temperature (°C)
J
Single Pulse Power
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
T
= 25 °C
A
0.1
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 65543
S10-0040-Rev. A, 11-Jan-10
New Product
SiR836DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
20
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
20
16
12
8
2.5
2.0
1.5
1.0
0.5
0.0
4
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65543
S10-0040-Rev. A, 11-Jan-10
www.vishay.com
5
New Product
SiR836DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65543.
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Document Number: 65543
S10-0040-Rev. A, 11-Jan-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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