SIS435DNT-T1-GE3 [VISHAY]
Power Field-Effect Transistor, 30A I(D), 20V, 0.0054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8T, POWERPAK-8;
| 型号： | SIS435DNT-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 30A I(D), 20V, 0.0054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8T, POWERPAK-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiS435DNT
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
®
PRODUCT SUMMARY
• TrenchFET Gen III P-Channel Power MOSFET
VDS (V)
RDS(on) () Max.
Qg (Typ.)
I
D (A)a
• Thin 0.8 mm max. height
• 100 % Rg and UIS Tested
• Material categorization:
- 30a
- 30a
- 30a
- 30a
0.0054 at VGS = - 4.5V
0.0060 at VGS = - 3.7 V
0.0083 at VGS = - 2.5 V
0.0140 at VGS = - 1.8 V
- 20
57 nC
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Smart Phones, Tablet PCs, and
Mobile Computing
S
®
Thin PowerPAK 1212-8
- Battery Switch
- Load Switch
- Power Management
- Battery Management
S
3 3
3.3 mm
1
G
S
2
S
3
G
4
D
0.8 mm
8
D
7
D
D
6
3.3 mm
D
P-Channel MOSFET
5
Bottom View
Ordering Information:
SiS435DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 20
8
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
TC = 25 °C
- 30a
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 30a
Continuous Drain Current (TJ = 150 °C)
ID
- 22b, c
- 17b, c
- 80
- 30a
- 3.1b, c
- 20
20
39
25
3.7b, c
2.4b, c
- 55 to 150
260
A
Pulsed Drain Current (t = 300 µs)
IDM
IS
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Avalanche Current
Single Pulse Avalanche Energy
IAS
EAS
L = 0.1 mH
mJ
W
T
T
C = 25 °C
C = 70 °C
Maximum Power Dissipation
PD
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
Typical
Maximum
Unit
t 10 s
Steady State
24
2.4
33
3.2
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 63264
S13-0465-Rev. A, 04-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS435DNT
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 16
2.9
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 0.4
- 20
- 0.9
100
- 1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 13 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
0.0044
0.0048
0.0065
0.0110
55
0.0054
0.0060
0.0083
0.0140
V
V
GS = - 3.7 V, ID = - 10 A
GS = - 2.5 V, ID = - 10 A
Drain-Source On-State Resistancea
RDS(on)
V
GS = - 1.8 V, ID = - 5 A
Forward Transconductancea
Dynamicb
gfs
VDS = - 10 V, ID = - 13 A
S
Ciss
Coss
Crss
Input Capacitance
5700
620
585
98
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 20 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
180
86
Qg
Total Gate Charge
57
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
7.4
13.1
3.8
40
0.8
7.6
80
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
30
60
V
DD = - 10 V, RL = 1
ID - 10 A, VGEN = - 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
100
30
200
60
ns
Turn-On Delay Time
Rise Time
15
30
10
20
V
DD = - 10 V, RL = 1
ID - 10 A, VGEN = - 8 V, Rg = 1
Turn-Off Delay Time
Fall Time
110
25
220
50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 30
- 80
- 1.2
40
A
IS = - 10 A, VGS = 0 V
Body Diode Voltage
- 0.8
19
10
9
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
20
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Reverse Recovery Rise Time
10
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 63264
S13-0465-Rev. A, 04-Mar-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS435DNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
60
40
20
0
20
16
12
8
VGS = 5 V thru 2.5 V
VGS = 2 V
TC = 25 °C
VGS = 1.5 V
VGS = 1 V
TC = 125 °C
4
TC = - 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0400
0.0300
0.0200
0.0100
0.0000
8000
6000
4000
2000
0
Ciss
VGS = 1.8 V
VGS = 3.7 V
VGS = 2.5 V
Coss, Crss
VGS = 4.5 V
20
0
40
60
80
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
8
VGS = 4.5 V, 3.7 V
VGS = 2.5 V
ID = 13 A
ID = 20 A
6
VDS = 10 V
VGS = 1.8 V
VDS = 5 V
4
2
0
VDS = 16 V
- 50 - 25
0
25
50
75
100 125 150
0
25
50
75
100
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63264
S13-0465-Rev. A, 04-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS435DNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
100
10
1
ID = 13 A
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
80
60
40
20
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
ID = 250 μA
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Limited by RDS(on)
*
100
10
100 μs
1 ms
10 ms
1
100 ms
1 s
10 s
DC
0.1
TA = 25 °C
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 63264
S13-0465-Rev. A, 04-Mar-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS435DNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
30
20
10
0
80
60
40
20
0
Package Limited
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63264
S13-0465-Rev. A, 04-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
5
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS435DNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 81 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63264.
www.vishay.com
6
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 63264
S13-0465-Rev. A, 04-Mar-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8T
MILLIMETERS
NOM.
INCHES
DIM.
A
MIN.
0.70
0.00
0.23
0.23
3.20
2.95
1.98
0.48
MAX.
0.80
0.05
0.41
0.33
3.40
3.15
2.24
0.89
MIN.
0.028
0.000
0.009
0.009
0.126
0.116
0.078
0.019
NOM.
0.030
MAX.
0.031
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.75
-
A1
b
-
0.30
0.012
c
0.28
0.011
D
3.30
0.130
D1
D2
D3
D4
D5
E
3.05
0.120
2.11
0.083
-
-
0.47 TYP.
2.3 TYP.
3.30
0.0185 TYP.
0.090 TYP.
0.130
3.20
2.95
1.47
1.75
3.40
3.15
1.73
1.98
0.126
0.116
0.058
0.069
0.134
0.124
0.068
0.078
E1
E2
E3
E4
e
3.05
0.120
1.60
0.063
1.85
0.073
0.34 TYP.
0.65 BSC
0.86 TYP.
-
0.013 TYP.
0.026 BSC
0.034 TYP.
-
K
K1
H
0.35
0.30
0.30
0.06
0°
-
0.014
0.012
0.012
0.002
0°
-
0.41
0.51
0.56
0.20
12°
0.016
0.020
0.022
0.008
12°
L
0.43
0.017
L1
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 TYP.
0.005 TYP.
ECN: T13-0056-Rev. A, 18-Feb-13
DWG: 6012
Revison: 18-Feb-13
Document Number: 62836
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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