SMBG51A-E3/5B [VISHAY]
TVS DIODE 51V 82.4V DO215AA;型号: | SMBG51A-E3/5B |
厂家: | VISHAY |
描述: | TVS DIODE 51V 82.4V DO215AA 电视 |
文件: | 总5页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
SMBG (DO-215AA)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
5.0 V to 188 V
V
BR (uni-directional)
6.4 V to 231 V
6.4 V to 231 V
600 W
TYPICAL APPLICATIONS
V
BR (bi-directional)
PPPM
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
I
FSM (uni-directional only)
100 A
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
SMBG (DO-215AA)
MECHANICAL DATA
Case: SMBG (DO-215AA)
Package
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3
-
RoHS-compliant, industrial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBG10CA).
Electrical characteristics apply in both directions.
meets JESD 201 class 2 whisker test
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
600
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
IPPM
See next table
100
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
IFSM
A
TJ, TSTG
-55 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 16-Jan-18
Document Number: 88456
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
MAXIMUM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
DEVICEMARKING
CODE
VOLTAGE
DEVICE TYPE
MODIFIED
GULL WING
PEAK PULSE CLAMPING
(1)
V
BR AT IT
(V)
SURGE
VOLTAGEAT
IPPM
CURRENT
(mA)
(V)
ID (μA) (3)
I
PPM (A) (2)
VC (V)
UNI
BI
MIN.
MAX.
(+)SMBG5.0A (5)
(+)SMBG6.0A
(+)SMBG6.5A
(+)SMBG7.0A
(+)SMBG7.5A
(+)SMBG8.0A
(+)SMBG8.5A
(+)SMBG9.0A
(+)SMBG10A
(+)SMBG11A
(+)SMBG12A
(+)SMBG13A
(+)SMBG14A
(+)SMBG15A
(+)SMBG16A
(+)SMBG17A
(+)SMBG18A
(+)SMBG20A
(+)SMBG22A
(+)SMBG24A
(+)SMBG26A
(+)SMBG28A
(+)SMBG30A
(+)SMBG33A
(+)SMBG36A
(+)SMBG40A
(+)SMBG43A
(+)SMBG45A
(+)SMBG48A
(+)SMBG51A
(+)SMBG54A
(+)SMBG58A
(+)SMBG60A
(+)SMBG64A
(+)SMBG70A
(+)SMBG75A
(+)SMBG78A
(+)SMBG85A
(+)SMBG90A
(+)SMBG100A
(+)SMBG110A
(+)SMBG120A
(+)SMBG130A
(+)SMBG150A
(+)SMBG160A
(+)SMBG170A
SMBG188A
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
KE
KG
AK
KM
AP
AR
AT
AV
AX
KZ
BE
LG
BK
BM
LM
LR
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
10
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
800
800
500
200
100
50
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
5.3
5.0
4.8
4.4
4.1
3.7
3.4
3.1
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
BT
LV
LV
LX
LZ
BX
BZ
CE
MG
CK
CM
CP
CR
CT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
113
121
126
137
146
162
177
193
209
243
259
275
85
90
111
123
135
147
159
185
197
209
111
122
133
144
167
178
189
209
100
110
120
130
150
160
170
188
2.9
2.5
2.3
2.2
231
2.0
328
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(+)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
For bi-directional types having VWM of 10 V and less, the ID limit is doubled
All terms and symbols are consistent with ANSI/IEEE C62.35
For the bi-directional SMBG5.0CA, the maximum VBR is 7.25 V
VF = 3.5 V at IF = 50 A (uni-directional only)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 16-Jan-18
Document Number: 88456
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient (1)
SYMBOL
VALUE
100
UNIT
RJA
°C/ W
Typical thermal resistance, junction to lead
RJL
20
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMBG5.0A-E3/52
SMBG5.0A-E3/5B
SMBG5.0AHE3/52 (1)
SMBG5.0AHE3/5B (1)
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.096
0.096
0.096
0.096
52
5B
52
5B
750
3200
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
3200
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10
1
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
50
0
Half Value - IPP
IPPM
2
10/1000 µs Waveform
as defined by R.E.A.
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
td
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1.0
3.0
4.0
0
2.0
td - Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
100
75
6000
1000
Measured at
Zero Bias
50
VR, Measured at
Stand-Off
Voltage VWM
100
10
25
TJ = 25 °C
f = 1.0 MHz
Uni-Directional
Bi-Directional
Vsig = 50 mVp-p
0
1
10
100 200
0
25
50
75
100 125
150 175
200
TJ - Initial Temperature (°C)
VWM - Reverse Stand-Off Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
Revision: 16-Jan-18
Document Number: 88456
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
100
200
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.1
10
0.001
0.01
0.1
1
10
100
1000
10
1
100
tp - Pulse Duration (s)
Number of Cycles at 60 Hz
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMBG (DO-215AA)
Cathode Band
Mounting Pad Layout
0.165 (4.19)
0.155 (3.94)
0.130 (3.30)
0.083 (2.10)
0.077 (1.96)
0.085 (2.16)
0.060 (1.27)
0.180 (4.57)
0.160 (4.06)
0.095 (2.41)
0.008 (0.20)
0.002 (0.05)
0.016 (0.41)
0.006 (0.15)
0.075 (1.90)
0.058 (1.47)
0.038 (0.97)
0.030 (0.76)
0.015 (0.38)
0.020
(0.51) MAX.
Seating Plane
0.255 (6.48)
0.235 (5.97)
Revision: 16-Jan-18
Document Number: 88456
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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