SQ2337ES-T1-GE3 [VISHAY]
TRANSISTOR 2200 mA, 80 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal;
| 型号： | SQ2337ES-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 2200 mA, 80 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SQ2337ES
Vishay Siliconix
Automotive
P-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
VDS (V)
DS(on) () at VGS = - 10 V
ID (A)
- 80
0.270
- 2.2
R
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualifiedc
TO-236
(SOT-23)
S
• Find out more about Vishay’s Automotive
Grade Product Requirements at:
www.vishay.com/applications
G
S
1
2
G
3
D
Top View
D
SQ2337ES
P-Channel MOSFET
Marking Code: 8Qxxx
ORDERING INFORMATION
Package
SOT-23
SQ2337ES-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 80
V
Gate-Source Voltage
VGS
20
TC = 25 °C
- 2.2
Continuous Drain Current
ID
TC = 125 °C
- 1.3
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
- 3.7
A
IDM
IAS
EAS
- 9
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
- 11
L = 0.1 mH
TC = 25 °C
6
mJ
W
3
Maximum Power Dissipationa
PD
T
C = 125 °C
1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
166
50
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
Document Number: 66717
S10-1767-Rev. A, 02-Aug-10
www.vishay.com
1
New Product
SQ2337ES
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 μA
VDS = VGS, ID = - 250 μA
- 80
-
-
V
- 2.5
-
- 3.5
VDS = 0 V, VGS
=
20 V
-
-
-
100
- 1
nA
μA
VGS = 0 V
GS = 0 V
VDS = - 80 V
VDS = - 80 V, TJ = 125 °C
VDS = - 80 V, TJ = 175 °C
VDS5 V
-
Zero Gate Voltage Drain Current
IDSS
V
-
-
-
- 50
- 150
-
VGS = 0 V
VGS = - 10 V
VGS = - 10 V
-
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
Dynamicb
ID(on)
RDS(on)
gfs
- 8
-
-
A
S
ID = - 1.2 A
0.210
4.5
0.270
-
VDS = - 15 V, ID = - 1.2 A
-
Input Capacitance
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
495
40
30
11.5
1.9
3.3
5
620
55
40
18
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
VGS = 0 V
VDS = - 40 V, f = 1 MHz
VDS = - 40 V, ID = - 1.2 A
pF
nC
Qgs
Qgd
td(on)
tr
VGS = - 10 V
-
8
10
18
8
15
27
12
VDD = - 40 V, RL = 41.6
ID - 0.96 A, VGEN = - 10 V, Rg = 1
ns
Turn-Off Delay Timec
Fall Timec
td(off)
tf
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 9
A
V
Forward Voltage
VSD
IF = - 2 A, VGS = 0 V
- 0.8
- 1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 66717
S10-1767-Rev. A, 02-Aug-10
New Product
SQ2337ES
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
7
7
6
5
4
3
2
1
0
V
= 10 V thru 6 V
GS
6
5
4
3
2
1
0
V
= 5 V
GS
T
= 25 °C
C
V
= 4 V
2
GS
T
= 125 °C
C
T
= - 55 °C
6
C
0
1
3
4
5
0
2
4
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
800
700
600
500
400
300
200
100
0
C
iss
C
oss
V
= 10 V
4
GS
C
rss
0
1
2
3
5
6
7
0
10
20
30
40
50
60
70
80
ID - Drain Current (A)
On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V)
Capacitance
10
8
2.5
2.1
1.7
1.3
0.9
0.5
I
= 1.2 A
I
= 1.2 A
V
D
D
V
= 10 V
GS
= 40 V
DS
6
V
= 6 V
GS
4
2
0
0
3
6
9
12
15
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 66717
S10-1767-Rev. A, 02-Aug-10
www.vishay.com
3
New Product
SQ2337ES
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
10
1
1.0
0.8
0.6
0.4
0.2
0.0
T
= 150 °C
J
T
= 150 °C
= 25 °C
J
T
= 25 °C
J
0.1
0.01
T
J
0.001
0
2
4
6
8
10
0
0.2
0.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.8
1.0
1.2
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.0
0.7
- 80
- 85
I
= 1 mA
D
I
= 250 μA
D
0.4
- 90
I
= 5 mA
D
0.1
- 95
- 0.2
- 0.5
- 100
- 105
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
I
Limited
DM
10
100 µs
Limited by R
*
DS(on)
1
0.1
1 ms
10 ms
100 ms
1 s
10 s, DC
BVDSS Limited
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 66717
S10-1767-Rev. A, 02-Aug-10
New Product
SQ2337ES
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50 °C/W
thJF
(t)
3. T - T = P
Z
JM
F
DM thJF
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66717.
Document Number: 66717
S10-1767-Rev. A, 02-Aug-10
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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