SQD45P03-12_GE3 [VISHAY]
Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3;
| 型号： | SQD45P03-12_GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQD45P03-12
Vishay Siliconix
www.vishay.com
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
- 30
0.010
0.024
- 50
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
• 100 % Rg and UIS Tested
ID (A)
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Configuration
Single
S
TO-252
G
Drain Connected to Tab
G
D
S
D
Top View
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
SQD45P03-12-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 30
V
Gate-Source Voltage
VGS
20
- 50
TC = 25 °Ca
TC = 125 °C
Continuous Drain Current
ID
- 37
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
- 50
A
IDM
IAS
EAS
- 200
- 31
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
48
mJ
W
TC = 25 °C
TC = 125 °C
71
Maximum Power Dissipationb
PD
23
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
2.1
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = - 250 μA
- 30
-
-
V
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
100
- 1
nA
μA
A
VGS = 0 V
VGS = 0 V
VDS = - 30 V
VDS = - 30 V, TJ = 125 °C
VDS = - 30 V, TJ = 175 °C
VDS- 5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
- 50
- 150
-
VGS = 0 V
-
-
ID(on)
VGS = - 10 V
- 50
-
0.008
-
V
GS = - 10 V
GS = - 10 V
ID = - 15 A
-
-
-
-
-
0.010
0.015
0.017
0.024
-
V
ID = - 15 A, TJ = 125 °C
ID = - 15 A, TJ = 175 °C
ID = - 12 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 4.5 V
-
0.019
34
Forward Transconductanceb
Dynamicb
gfs
VDS = - 15 V, ID = - 17 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
2794
616
470
55.3
7.3
14
3495
770
590
83
VGS = 0 V
VDS = - 15 V, f = 1 MHz
-
pF
-
-
Qgs
Qgd
Rg
V
GS = - 10 V
VDS = - 15 V, ID = - 45 A
f = 1 MHz
-
-
nC
-
-
1.40
2.86
11
4.50
16.5
16.5
43.5
28.5
td(on)
tr
td(off)
tf
-
-
-
-
11
VDD = - 15 V, RL = 0.33
ID - 45 A, VGEN = - 10 V, Rg = 1
ns
29
19
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 200
- 1.5
A
V
Forward Voltage
VSD
IF = - 40 A, VGS = 0
- 0.9
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
80
60
40
20
0
100
80
60
40
20
0
V
= 10 V thru 6 V
GS
V
= 5 V
GS
V
= 4 V
GS
T
= 25 °C
C
T
C
= 125 °C
T
C
= - 55 °C
0
3
6
9
12
15
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0.00
60
48
36
24
12
0
TC = - 55 °C
TC = 25 °C
VGS = 4.5 V
TC = 125 °C
VGS = 10 V
0
20
40
60
80
100
0
8
16
24
32
40
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2.0
1.7
1.4
1.1
0.8
0.5
100
10
1
I
= 15 A
D
V
GS
= 10 V
T
J
= 150 °C
T
J
= 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75 100 125 150 175
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.10
0.08
0.06
0.04
0.02
0.00
10
I
= 45 A
D
8
V
= 15 V
DS
6
4
2
T
= 150 °C
J
T
J
= 25 °C
0
0
10
20
30
40
50
60
0
2
4
6
8
10
Q
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
g
On-Resistance vs. Gate-to-Source Voltage
Gate Charge
5000
4000
3000
2000
1000
0
1.1
0.8
I
= 250 µA
D
C
iss
0.5
I
= 5 mA
D
0.2
C
oss
- 0.1
- 0.4
C
rss
0
5
10
15
20
25
30
- 50 - 25
0
25
50
75 100 125 150 175
V
- Drain-to-Source Voltage (V)
DS
T
J
- Temperature (°C)
Capacitance
Threshold Voltage
- 30
- 32
- 34
- 36
- 38
- 40
I
= 10 mA
D
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
I
Limited
100
10
DM
100 µs
1 ms
Limited by R
*
DS(on)
I
Limited
D
10 ms
100 ms
1 s, 10 s, DC
1
0.1
0.01
T
= 25 °C
C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65549.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
DPAK / TO-252 and Reverse DPAK
Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages:
DATASHEET PART NUMBER
SQD07N25-350H
SQD100N02-3m5L
SQD100N03-3m2L
SQD100N03-3m4
SQD100N04-3m6
SQD100N04-3m6L
SQD10N30-330H
SQD15N06-42L
SQD19P06-60L
SQD23N06-31L
SQD25N06-22L
SQD25N15-52
OLD ORDERING CODE a
SQD07N25-350H-GE3
-
NEW ORDERING CODE
SQD07N25-350H_GE3
SQD100N02-3m5L_GE3
SQD100N03-3M2L_GE3
SQD100N03-3M4_GE3
SQD100N04-3M6_GE3
SQD100N04-3M6L_GE3
SQD10N30-330H_GE3
SQD15N06-42L_GE3
SQD19P06-60L_GE3
SQD23N06-31L_GE3
SQD25N06-22L_GE3
SQD25N15-52_GE3
SQD30N05-20L_GE3
SQD40N06-14L_GE3
SQD40N10-25_GE3
SQD40P10-40L_GE3
SQD45P03-12_GE3
SQD50N04-5M6_GE3
SQD50N04-5m6L_GE3
SQD50N05-11L_GE3
SQD50N06-09L_GE3
SQD50N10-8M9L_GE3
SQD50P03-07_GE3
SQD50P04-13L_GE3
SQD50P04-09L_GE3
SQD50P06-15L_GE3
SQD50P08-25L_GE3
SQD50P08-28_GE3
SQD70140EL_GE3
SQD100N03-3M2L-GE3
SQD100N03-3M4-GE3
SQD100N04-3M6-GE3
SQD100N04-3M6L-GE3
SQD10N30-330H-GE3
SQD15N06-42L-GE3
SQD19P06-60L-GE3
SQD23N06-31L-GE3
SQD25N06-22L-GE3
SQD25N15-52-GE3
SQD30N05-20L-GE3
SQD40N06-14L-GE3
SQD40N10-25-GE3
SQD40P10-40L-GE3
SQD45P03-12-GE3
SQD50N04-5M6-GE3
-
SQD30N05-20L
SQD40N06-14L
SQD40N10-25
SQD40P10-40L
SQD45P03-12
SQD50N04-5m6
SQD50N04-5m6L
SQD50N05-11L
SQD50N06-09L
SQD50N10-8m9L
SQD50P03-07
SQD50N05-11L-GE3
SQD50N06-09L-GE3
SQD50N10-8M9L-GE3
SQD50P03-07-GE3
SQD50P04-13L-GE3
SQD50P04-09L-GE3
SQD50P06-15L-GE3
SQD50P08-25L-GE3
SQD50P08-28-GE3
-
SQD50P04-13L
SQD50P04-09L
SQD50P06-15L
SQD50P08-25L
SQD50P08-28
SQD70140EL
SQD90P04-9m4L
SQD97N06-6m3L
SQR40N10-25
SQD90P04-9M4L-GE3
SQD97N06-6M3L-GE3
SQR40N10-25-GE3
SQR50N04-3M8-GE3
SQD90P04-9M4L_GE3
SQD97N06-6M3L_GE3
SQR40N10-25_GE3
SQR50N04-3M8_GE3
SQR50N04-3m8
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 01-Jul-16
Document Number: 66957
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
-
MIN.
0.086
-
2.18
-
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
-
0.265
-
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
-
0.035
-
1.01
0.040
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
E1
Note
Dimension L3 is for reference only.
•
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(1.397)
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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