SQJ461EP-T1-GE3 [VISHAY]
Automotive P-Channel 60 V (D-S) 175 °C MOSFET; 汽车P沟道60 V （D -S ） 175 ℃的MOSFET
| 型号： | SQJ461EP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Automotive P-Channel 60 V (D-S) 175 °C MOSFET |
| 文件： | 总7页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQJ461EP
Vishay Siliconix
www.vishay.com
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
PRODUCT SUMMARY
VDS (V)
- 60
0.016
0.021
- 30
RDS(on) (Ω) at VGS = - 10 V
RDS(on) (Ω) at VGS = - 4.5 V
ID (A)
• 100 % Rg and UIS Tested
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8L Single
S
G
D
4
G
3
S
2
D
P-Channel MOSFET
S
1
S
ORDERING INFORMATION
Package
PowerPAK SO-8L
SQJ461EP-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
- 60
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
TC = 25 °C
- 30
Continuous Drain Currenta
ID
T
C = 125 °C
- 29
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
- 30
A
IDM
IAS
EAS
- 120
- 50
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
125
mJ
W
TC = 25 °C
83
Maximum Power Dissipationb
PD
TC = 125 °C
27
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
- 55 to + 175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
65
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
1.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 , ID = - 250 μA
VDS = VGS, ID = - 250 μA
- 60
-
-
V
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
100
- 1
nA
μA
A
VGS = 0 V
VGS = 0 V
VDS = - 60 V
VDS = - 60 V, TJ = 125 °C
VDS = - 60 V, TJ = 175 °C
VDS ≥ 5 V
-
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
- 50
- 150
-
VGS = 0 V
-
-
ID(on)
VGS = - 10 V
- 30
-
V
GS = - 10 V
ID = - 14.4 A
-
-
-
-
-
0.013
0.017
0.021
0.026
40
0.016
0.021
0.026
0.032
-
VGS = - 4.5 V
ID = - 12.6 A
Drain-Source On-State Resistancea
RDS(on)
Ω
VGS = - 10 V ID = - 14.4 A, TJ = 125 °C
VGS = - 10 V ID = - 14.4 A, TJ = 175 °C
VDS = - 15 V, ID = - 14.4 A
Forward Transconductanceb
Dynamicb
gfs
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
3920
420
295
90
4710
510
360
140
-
VGS = 0 V
VDS = - 30 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
V
GS = - 10 V VDS = - 30 V, ID = - 14.4 A
-
13
nC
-
22
-
f = 1 MHz
1.4
-
2.3
16
3.2
20
Ω
td(on)
tr
td(off)
tf
-
10
13
VDD = - 30 V, RL = 30 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
ns
-
70
85
-
22
30
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 120
- 1.2
A
V
Forward Voltage
VSD
IF = - 4.5 A, VGS = 0
- 0.8
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V thru 4 V
GS
T
= 25 °C
C
V
= 3 V
GS
T
C
= 125 °C
T
C
= - 55 °C
4
0
2
4
6
8
10
0
1
2
3
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
75
60
45
30
15
0
0.05
0.04
0.03
0.02
0.01
0.00
T
= - 55 °C
C
T
C
= 25 °C
T
C
= 125 °C
V
= 4.5 V
GS
V
GS
= 10 V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
- Drain Current (A)
I
- Drain Current (A)
D
D
Transconductance
On-Resistance vs. Drain Current
6000
5000
4000
3000
2000
1000
0
10
8
I
= - 14.4 A
D
V
= - 30 V
C
iss
DS
6
4
C
oss
2
C
rss
0
0
10
20
30
40
50
60
0
20
40
60
80
100
V
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
DS
g
Capacitance
Gate Charge
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
100
10
1
I
= 14.4 A
D
T
J
= 150 °C
V
= 10 V
GS
T
J
= 25 °C
0.1
0.01
0.001
- 50 - 25
0
25
50
75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.10
0.08
0.06
0.04
0.02
0.00
1.1
0.8
I
= 250 µA
D
0.5
I
= 1 mA
D
T
J
= 150 °C
0.2
- 0.1
- 0.4
T
J
= 25 °C
4
0
2
6
8
10
- 50 - 25
0
25
50
75 100 125 150 175
V
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
GS
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
- 60
I
= 1 mA
D
- 63
- 66
- 69
- 72
- 75
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
Breakdown Voltage vs. Junction Temperature
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
I
Limited
DM
100
10
Limited by R
*
DS(on)
100 µs
1 ms
I
D
Limited
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS Limited
10
0.01
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
Z
3. TJM - T = P
4. Surface Mounted
A
DM thJA
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65541.
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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