SQJ461EP-T1_GE3 [VISHAY]
Power Field-Effect Transistor, 21.7A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN;
| 型号： | SQJ461EP-T1_GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 21.7A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQJ461EP
Vishay Siliconix
www.vishay.com
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
PRODUCT SUMMARY
VDS (V)
- 60
0.016
0.021
- 30
RDS(on) (Ω) at VGS = - 10 V
RDS(on) (Ω) at VGS = - 4.5 V
ID (A)
• 100 % Rg and UIS Tested
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8L Single
S
G
D
4
G
3
S
2
D
P-Channel MOSFET
S
1
S
ORDERING INFORMATION
Package
PowerPAK SO-8L
SQJ461EP-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
- 60
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
TC = 25 °C
- 30
Continuous Drain Currenta
ID
T
C = 125 °C
- 29
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
- 30
A
IDM
IAS
EAS
- 120
- 50
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
125
mJ
W
TC = 25 °C
83
Maximum Power Dissipationb
PD
TC = 125 °C
27
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
- 55 to + 175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
65
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
1.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 , ID = - 250 μA
VDS = VGS, ID = - 250 μA
- 60
-
-
V
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
100
- 1
nA
μA
A
VGS = 0 V
VGS = 0 V
VDS = - 60 V
VDS = - 60 V, TJ = 125 °C
VDS = - 60 V, TJ = 175 °C
VDS ≥ 5 V
-
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
- 50
- 150
-
VGS = 0 V
-
-
ID(on)
VGS = - 10 V
- 30
-
V
GS = - 10 V
ID = - 14.4 A
-
-
-
-
-
0.013
0.017
0.021
0.026
40
0.016
0.021
0.026
0.032
-
VGS = - 4.5 V
ID = - 12.6 A
Drain-Source On-State Resistancea
RDS(on)
Ω
VGS = - 10 V ID = - 14.4 A, TJ = 125 °C
VGS = - 10 V ID = - 14.4 A, TJ = 175 °C
VDS = - 15 V, ID = - 14.4 A
Forward Transconductanceb
Dynamicb
gfs
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
3920
420
295
90
4710
510
360
140
-
VGS = 0 V
VDS = - 30 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
V
GS = - 10 V VDS = - 30 V, ID = - 14.4 A
-
13
nC
-
22
-
f = 1 MHz
1.4
-
2.3
16
3.2
20
Ω
td(on)
tr
td(off)
tf
-
10
13
VDD = - 30 V, RL = 30 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
ns
-
70
85
-
22
30
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 120
- 1.2
A
V
Forward Voltage
VSD
IF = - 4.5 A, VGS = 0
- 0.8
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V thru 4 V
GS
T
= 25 °C
C
V
= 3 V
GS
T
C
= 125 °C
T
C
= - 55 °C
4
0
2
4
6
8
10
0
1
2
3
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
75
60
45
30
15
0
0.05
0.04
0.03
0.02
0.01
0.00
T
= - 55 °C
C
T
C
= 25 °C
T
C
= 125 °C
V
= 4.5 V
GS
V
GS
= 10 V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
- Drain Current (A)
I
- Drain Current (A)
D
D
Transconductance
On-Resistance vs. Drain Current
6000
5000
4000
3000
2000
1000
0
10
8
I
= - 14.4 A
D
V
= - 30 V
C
iss
DS
6
4
C
oss
2
C
rss
0
0
10
20
30
40
50
60
0
20
40
60
80
100
V
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
DS
g
Capacitance
Gate Charge
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
100
10
1
I
= 14.4 A
D
T
J
= 150 °C
V
= 10 V
GS
T
J
= 25 °C
0.1
0.01
0.001
- 50 - 25
0
25
50
75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.10
0.08
0.06
0.04
0.02
0.00
1.1
0.8
I
= 250 µA
D
0.5
I
= 1 mA
D
T
J
= 150 °C
0.2
- 0.1
- 0.4
T
J
= 25 °C
4
0
2
6
8
10
- 50 - 25
0
25
50
75 100 125 150 175
V
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
GS
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
- 60
I
= 1 mA
D
- 63
- 66
- 69
- 72
- 75
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
Breakdown Voltage vs. Junction Temperature
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
I
Limited
DM
100
10
Limited by R
*
DS(on)
100 µs
1 ms
I
D
Limited
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS Limited
10
0.01
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
Z
3. TJM - T = P
4. Surface Mounted
A
DM thJA
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ461EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65541.
S11-2288-Rev. E, 28-Nov-11
Document Number: 65541
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package:
DATASHEET PART NUMBER
SQJ200EP
SQJ202EP
SQJ401EP
SQJ402EP
SQJ403EEP
SQJ403EP
SQJ410EP
SQJ412EP
SQJ416EP
SQJ418EP
SQJ422EP
SQJ423EP
SQJ431EP
SQJ443EP
SQJ444EP
SQJ446EP
SQJ456EP
SQJ457EP
SQJ459EP
SQJ460AEP
SQJ461EP
SQJ463EP
SQJ465EP
SQJ469EP
SQJ474EP
SQJ476EP
SQJ479EP
SQJ486EP
SQJ488EP
SQJ500AEP
SQJ840EP
SQJ844AEP
SQJ850EP
SQJ858AEP
SQJ868EP
SQJ886EP
SQJ910AEP
SQJ912AEP
SQJ940EP
SQJ942EP
SQJ951EP
SQJ952EP
SQJ956EP
SQJ960EP
SQJ963EP
SQJ968EP
SQJ980AEP
SQJ992EP
OLD ORDERING CODE a
NEW ORDERING CODE
SQJ200EP-T1_GE3
SQJ202EP-T1_GE3
SQJ401EP-T1_GE3
SQJ402EP-T1_GE3
SQJ403EEP-T1_GE3
SQJ403EP-T1_GE3
SQJ410EP-T1_GE3
SQJ412EP-T1_GE3
SQJ416EP-T1_GE3
SQJ418EP-T1_GE3
SQJ422EP-T1_GE3
SQJ423EP-T1_GE3
SQJ431EP-T1_GE3
SQJ443EP-T1_GE3
SQJ444EP-T1_GE3
SQJ446EP-T1_GE3
SQJ456EP-T1_GE3
SQJ457EP-T1_GE3
SQJ459EP-T1_GE3
SQJ460AEP-T1_GE3
SQJ461EP-T1_GE3
SQJ463EP-T1_GE3
SQJ465EP-T1_GE3
SQJ469EP-T1_GE3
SQJ474EP-T1_GE3
SQJ476EP-T1_GE3
SQJ479EP-T1_GE3
SQJ486EP-T1_GE3
SQJ488EP-T1_GE3
SQJ500AEP-T1_GE3
SQJ840EP-T1_GE3
SQJ844AEP-T1_GE3
SQJ850EP-T1_GE3
SQJ858AEP-T1_GE3
SQJ868EP-T1_GE3
SQJ886EP-T1_GE3
SQJ910AEP-T1_GE3
SQJ912AEP-T1_GE3
SQJ940EP-T1_GE3
SQJ942EP-T1_GE3
SQJ951EP-T1_GE3
SQJ952EP-T1_GE3
SQJ956EP-T1_GE3
SQJ960EP-T1_GE3
SQJ963EP-T1_GE3
SQJ968EP-T1_GE3
SQJ980AEP-T1_GE3
SQJ992EP-T1_GE3
-
-
SQJ401EP-T1-GE3
SQJ402EP-T1-GE3
SQJ403EEP-T1-GE3
-
SQJ410EP-T1-GE3
SQJ412EP-T1-GE3
-
-
SQJ422EP-T1-GE3
-
SQJ431EP-T1-GE3
SQJ443EP-T1-GE3
-
-
SQJ456EP-T1-GE3
-
-
-
SQJ461EP-T1-GE3
SQJ463EP-T1-GE3
SQJ465EP-T1-GE3
SQJ469EP-T1-GE3
-
-
-
SQJ486EP-T1-GE3
SQJ488EP-T1-GE3
SQJ500AEP-T1-GE3
SQJ840EP-T1-GE3
SQJ844AEP-T1-GE3
SQJ850EP-T1-GE3
SQJ858AEP-T1-GE3
-
SQJ886EP-T1-GE3
SQJ910AEP-T1-GE3
SQJ912AEP-T1-GE3
SQJ940EP-T1-GE3
SQJ942EP-T1-GE3
SQJ951EP-T1-GE3
-
SQJ956EP-T1-GE3
SQJ960EP-T1-GE3
SQJ963EP-T1-GE3
SQJ968EP-T1-GE3
SQJ980AEP-T1-GE3
SQJ992EP-T1-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 01-Jul-16
Document Number: 65804
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
for Non-Al Parts
b2
D2
A1
b1
e
θ
b3
b4
b
D1
D
0.25 gauge line
Topside view
Backside view (single)
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 16-May-16
Document Number: 69003
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MILLIMETERS
NOM.
1.07
-
INCHES
DIM.
MIN.
1.00
0.00
0.33
0.44
4.80
MAX.
1.14
0.127
0.48
0.58
5.00
MIN.
0.039
0.00
NOM.
0.042
-
MAX.
0.045
0.005
0.019
0.023
0.197
A
A1
b
0.41
0.51
4.90
0.094
0.47
0.25
5.13
4.90
3.96
1.73
1.27 BSC
6.15
4.37
3.28
-
0.013
0.017
0.189
0.016
0.020
0.193
0.004
0.019
0.010
0.202
0.193
0.156
0.068
0.050 BSC
0.242
0.172
0.129
-
b1
b2
b3
b4
c
0.20
5.00
4.80
3.86
1.63
0.30
5.25
5.00
4.06
1.83
0.008
0.197
0.189
0.152
0.064
0.012
0.207
0.197
0.160
0.072
D
D1
D2
D3
e
E
6.05
4.27
3.18
-
6.25
4.47
3.38
0.15
0.82
1.22
0.238
0.168
0.125
-
0.246
0.176
0.133
0.006
0.032
0.048
E1
E2
F
L
0.62
0.92
0.72
1.07
0.51
0.23
0.41
2.82
2.96
-
0.024
0.036
0.028
0.042
0.020
0.009
0.016
0.111
0.117
-
L1
K
W
W1
W2
W3
0°
10°
0°
10°
ECN: T16-0221-Rev. D, 16-May-16
DWG: 5976
Note
•
Millimeters will gover
Revision: 16-May-16
Document Number: 69003
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
www.vishay.com
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
4.061
(0.160)
3.630
(0.143)
0.595
(0.023)
0.610
(0.024)
0.710
(0.028)
2.715
(0.107)
0.860
(0.034)
0.410
(0.016)
0.820
(0.032)
1.905
1.270
(0.075)
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
Document Number: 63818
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
SQJ469EP-T1_GE3
Power Field-Effect Transistor, 32A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
VISHAY
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