SS15HE3_B/I [VISHAY]
Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, SMA, 2 PIN;
| 型号： | SS15HE3_B/I |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, SMA, 2 PIN 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS12, SS13, SS14, SS15, SS16
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Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
DO-214AC (SMA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
IFSM
20 V, 30 V, 40 V, 50 V, 60 V
40 A
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
VF
0.50 V, 0.75 V
150 °C
TJ max.
Package
Diode variations
Base P/N-E3
-
RoHS-compliant, commercial grade
DO-214AC (SMA)
Single
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12
SS13
S3
SS14
S4
SS15
S5
SS16
S6
UNIT
Device marking code
S2
V
V
V
V
A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
30
40
50
60
14
21
28
35
42
Maximum DC blocking voltage
Maximum average forward rectified current at TL (fig. 1)
20
30
40
50
60
IF(AV)
1.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dV/dt
TJ
10 000
V/μs
°C
-65 to +150
-65 to +150
TSTG
°C
Revision: 09-Nov-16
Document Number: 88746
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12, SS13, SS14, SS15, SS16
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
SS12
SS13
SS14
SS15
SS16
UNIT
Maximum instantaneous forward
voltage (1)
1.0 A
VF
IR
0.50
0.75
5.0
V
TA = 25 °C
0.2
Maximum DC reverse current at
rated DC blocking voltage (1)
mA
T
A = 100 °C
6.0
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12
SS13
SS14
88
SS15
SS16
UNIT
RJA
Typical thermal resistance (1)
°C/W
RJL
28
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS14-E3/61T
0.064
61T
5AT
H
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS14-E3/5AT
0.064
SS14HE3_B/H (1)
SS14HE3_B/I (1)
0.064
0.064
I
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
50
At Rated TL
8.3 ms Single Half Sine-Wave
1.0
0.5
0
40
30
20
10
0
PCB Mounted on 0.2" x 0.2"
(5.0 mm x 5.0 mm) Copper Pad Area
SS12 thru SS16
0
25
50
75
100
125
150
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Revision: 09-Nov-16
Document Number: 88746
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12, SS13, SS14, SS15, SS16
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Vishay General Semiconductor
100
10
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Pulse Width = 300˩s
1% Duty Cycle
TJ = 150 °C
1
100
TJ = 25 °C
0.1
0.01
SS12 thru SS14
SS15 and SS16
SS12 thru SS14
SS15 and SS16
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
TJ = 150 °C
SS12 thru SS14
SS15 and SS16
10
1
TJ = 125 °C
0.1
TJ = 75 °C
0.01
0.001
TJ = 25 °C
60
0
20
40
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 09-Nov-16
Document Number: 88746
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16
Document Number: 91000
1
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VISHAY
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