SS33HE3_B/H [VISHAY]
Rectifier Diode,;
| 型号： | SS33HE3_B/H |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 功效 瞄准线 测试 光电二极管 |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
Available
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMC (DO-214AB)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V, 30 V, 40 V, 50 V, 60 V
100 A
MECHANICAL DATA
IFSM
EAS
Case: SMC (DO-214AB)
20 mJ
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
VF
0.5 V, 0.75 V
150 °C
TJ max.
Package
Circuit configuration
SMC (DO-214AB)
Single
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32
SS33
S3
SS34
S4
SS35
S5
SS36
S6
UNIT
Device marking code
S2
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
30
40
50
60
V
V
V
A
14
21
28
35
42
Maximum DC blocking voltage
Maximum average forward rectified current at TL (fig. 1)
20
30
40
50
60
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
EAS
100
20
A
Non-repetitive avalanche energy at TA = 25 °C,
mJ
IAS = 2.0 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dV/dt
TJ
10 000
V/μs
°C
-55 to +150
-55 to +150
TSTG
°C
Revision: 12-Nov-2018
Document Number: 88751
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS32
SS33
SS34
SS35
SS36
UNIT
Maximum instantaneous
forward voltage (1)
3.0 A
VF
0.5
0.75
10
V
TA = 25 °C
0.5
Maximum DC reverse current
at rated DC blocking voltage (1)
IR
mA
TA = 100 °C
20
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32
SS33
SS34
55
SS35
SS36
UNIT
RJA
Typical thermal resistance (1)
°C/W
RJL
17
Note
(1)
PCB mounted with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS36-E3/57T
0.235
57T
9AT
H
850
3500
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS36-E3/9AT
0.235
SS36HE3_B/H (1)
SS36HE3_B/I (1)
SS36-M3/57T
0.235
0.235
I
3500
850
0.235
57T
9AT
H
SS36-M3/9AT
0.235
3500
850
SS36HM3_A/H (1)
SS36HM3_A/I (1)
0.235
0.235
I
3500
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
100
80
60
40
20
0
At Rated TL
8.3 ms Single Half Sine-Wave
PCB Mounted on 0.55" x 0.55"
(14 mm x 14 mm) Copper Pad Area
SS32 thru SS36
0
25
50
75
100
125
150
1
10
Number of Cycles at 60 Hz
100
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 12-Nov-2018
Document Number: 88751
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
100
10
1000
TJ = 150 °C
Pulse Width = 300˩s
1% Duty Cycle
1
100
TJ = 25 °C
0.1
0.01
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
SS32 thru SS34
SS35 and SS36
SS32 thru SS34
SS35 and SS36
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
100
10
1
SS32 thru SS34
TJ = 150 °C
SS35 and SS36
100
10
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
0.001
TJ = 25 °C
40
0.1
0.01
0
20
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Current Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 12-Nov-2018
Document Number: 88751
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
FAIRCHILD
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