SS36-HE3/57T [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN;
| 型号： | SS36-HE3/57T |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN 功效 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS32 thru SS36
Vishay General Semiconductor
www.vishay.com
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AB (SMC)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
VRRM
IFSM
20 V to 60 V
100 A
EAS
20 mJ
VF
0.5 V, 0.75 V
125 °C, 150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
TJ max.
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32
SS33
S3
SS34
S4
SS35
S5
SS36
S6
UNIT
Device marking code
S2
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
30
40
50
60
V
V
V
A
14
21
28
35
42
Maximum DC blocking voltage
Maximum average forward rectified current at TL (fig. 1)
20
30
40
50
60
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
EAS
100
A
Non-repetitive avalanche energy at TA = 25 °C,
20
mJ
IAS = 2.0 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dV/dt
TJ
10 000
V/µs
°C
- 55 to + 125
- 55 to + 150
TSTG
- 55 to + 150
°C
Revision: 22-Mar-12
Document Number: 88751
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS32 thru SS36
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS32
SS33
SS34
SS35
SS36
UNIT
Maximum instantaneous
forward voltage (1)
3.0 A
VF
0.5
0.75
10
V
TA = 25 °C
0.5
Maximum DC reverse current
at rated DC blocking voltage (1)
IR
mA
TA = 100 °C
20
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32
SS33
SS34
55
SS35
SS36
UNIT
RJA
Typical thermal resistance (1)
°C/W
RJL
17
Note
(1)
P.C.B. mounted 0.55" x 0.55" (14 mm x 14 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
SS34-E3/57T
0.235
57T
9AT
57T
9AT
850
3500
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS34-E3/9AT
0.235
SS34HE3/57T (1)
SS34HE3/9AT (1)
0.235
0.235
3500
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
3.5
100
80
60
40
20
0
Resistive or Inductive Load
At Rated TL
8.3 ms Single Half Sine-Wave
3.0
2.5
SS32 thru SS34
SS35 and SS36
2.0
1.5
1.0
0.5
0
P. C. B. M o unted on
0.55" x 0.55" (14 mm x 14 mm)
Copper Pad Areas
1
10
100
50
70
90
110
130
150
170
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 22-Mar-12
Document Number: 88751
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS32 thru SS36
Vishay General Semiconductor
www.vishay.com
100
10
1000
100
10
TJ = 125 °C
TJ = 150 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = 25 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
SS32 thru SS34
SS35 and SS36
SS32 thru SS34
SS35 and SS36
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
100
10
1
SS32 thru SS34
SS35 and SS36
10
TA = 125 °C
1
0.1
TA = 75 °C
0.01
TA = 25 °C
0.001
0.1
0.01
0
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Current Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 22-Mar-12
Document Number: 88751
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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