SS8PH9HE3/86A [VISHAY]

Rectifier Diode, Schottky, 1 Element, 8A, 90V V(RRM),;
SS8PH9HE3/86A
型号: SS8PH9HE3/86A
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 1 Element, 8A, 90V V(RRM),

二极管
文件: 总5页 (文件大小:108K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
New Product  
SS8PH9 & SS8PH10  
Vishay General Semiconductor  
High Current Density Surface Mount  
High-Voltage Schottky Rectifier  
FEATURES  
• Very low profile - typical height of 1.1 mm  
eSMPTM Series  
• Ideal for automated placement  
• Guardring for overvoltage protection  
K
• High barrier technology, T = 175 °C  
J
maximum  
1
• Low leakage current  
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
TO-277A (SMPC)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Anode 1  
Anode 2  
K
Cathode  
Halogen-free  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
PRIMARY CHARACTERISTICS  
IF(AV)  
8.0 A  
Molding compound meets UL 94V-0 flammability  
rating.  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC-Q101 qualified)  
Base P/N-M3 - halogen-free and RoHS compliant,  
commercial grade  
Base P/NHM3 - halogen-free and RoHS compliant,  
high reliability/automotive grade (AEC-Q101 qualified)  
VRRM  
IFSM  
90 V, 100 V  
150 A  
EAS  
20 mJ  
V
F at IF = 8 A  
IR  
0.720 V  
0.18 µA  
175 °C  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 and M3 suffix meets JESD 201 class 1A whisker  
test, HE3 and HM3 suffix meets JESD 201 class 2  
whisker test  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS8PH9  
8H9  
SS8PH10  
8H10  
UNIT  
Device marking code  
VRRM  
IF(AV)  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
90  
100  
V
A
8.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C  
Operating junction and storage temperature range  
EAS  
J, TSTG  
20  
mJ  
°C  
T
- 55 to + 175  
Document Number: 88989  
Revision: 30-Jul-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
New Product  
SS8PH9 & SS8PH10  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
IF = 4.0 A  
SYMBOL  
TYP.  
MAX.  
UNIT  
0.769  
0.850  
-
TA = 25 °C  
IF = 8.0 A  
0.90  
Instantaneous forward voltage (1)  
VF  
V
IF = 4.0 A  
IF = 8.0 A  
0.634  
0.720  
-
T
A = 125 °C  
0.76  
TA = 25 °C  
0.18  
110  
2.0  
300  
Reverse current (2)  
rated VR  
IR  
µA  
pF  
TA = 125 °C  
Typical junction capacitance  
4.0 V, 1 MHz  
CJ  
140  
-
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS8PH9  
SS8PH10  
UNIT  
(1)  
RθJA  
RθJL  
65  
3
Typical thermal resistance  
°C/W  
Note:  
(1) Units mounted on recommended P.C.B. 1 oz. pad layout  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
SS8PH10-E3/86A  
SS8PH10-E3/87A  
SS8PH10HE3/86A (1)  
SS8PH10HE3/87A (1)  
SS8PH10-M3/86A  
SS8PH10-M3/87A  
SS8PH10HM3/86A (1)  
SS8PH10HM3/87A (1)  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE BASE QUANTITY  
DELIVERY MODE  
0.10  
0.10  
0.10  
0.10  
0.10  
0.10  
0.10  
0.10  
86A  
87A  
86A  
87A  
86A  
87A  
86A  
87A  
1500  
6500  
1500  
6500  
1500  
6500  
1500  
6500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
Note:  
(1) High reliability/automotive grade (AEC-Q101 qualified)  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88989  
Revision: 30-Jul-08  
New Product  
SS8PH9 & SS8PH10  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
10  
10 000  
1000  
100  
10  
Resistive or Inductive Load  
TA = 175 °C  
TA = 150 °C  
9
8
7
T
A = 125 °C  
6
5
4
1
3
0.1  
TL measured  
at the Cathode Band Terminal  
TA = 25 °C  
2
0.01  
0.001  
1
0
100 110  
120 130 140  
150  
160  
170 180  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Percent of Rated Peak Reverse Voltage (%)  
Lead Temperature (°C)  
Figure 1. Maximum Forward Current Derating Curve  
Figure 4. Typical Reverse Characteristics  
8.0  
1000  
100  
10  
D = 0.5  
D = 0.8  
D = 0.3  
7.0  
6.0  
5.0  
D = 0.2  
D = 0.1  
4.0  
3.0  
D = 1.0  
T
2.0  
1.0  
0
D = tp/T  
tp  
0
1.0 2.0 3.0 4.0  
5.0 6.0 7.0 8.0  
9.0  
0.1  
1
10  
100  
Average Forward Current (A)  
Reverse Voltage (V)  
Figure 2. Forward Power Loss Characteristics  
Figure 5. Typical Junction Capacitance  
100  
10  
100  
Junction to Ambient  
TA = 175 °C  
TA = 150 °C  
TA = 125 °C  
10  
1
TA = 25 °C  
0.1  
0.01  
1
0.01  
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
Instantaneous Forward Voltage (V)  
0.1  
1
10  
100  
t - Pulse Duration (s)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Document Number: 88989  
Revision: 30-Jul-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
New Product  
SS8PH9 & SS8PH10  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-277A (SMPC)  
0.187 (4.75)  
0.175 (4.45)  
0.016 (0.40)  
0.006 (0.15)  
K
0.262 (6.65)  
0.250 (6.35)  
0.242 (6.15)  
0.238 (6.05)  
0.026 (0.65) NOM.  
2
1
0.047 (1.20)  
0.039 (1.00)  
0.171 (4.35)  
0.167 (4.25)  
0.146 (3.70)  
0.134 (3.40)  
Mounting Pad Layout  
0.189  
MIN.  
0.087 (2.20)  
0.075 (1.90)  
(4.80)  
0.189 (4.80)  
0.173 (4.40)  
0.186  
(4.72)  
MIN.  
0.268  
(6.80)  
0.155 (3.94)  
NOM.  
0.030 (0.75) NOM.  
0.049 (1.24)  
0.037 (0.94)  
0.050  
(1.27)  
MIN.  
0.084 (2.13) NOM.  
0.053 (1.35)  
0.041 (1.05)  
0.041  
(1.04)  
0.055  
(1.40)  
MIN.  
Conform to JEDEC TO-277A  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88989  
Revision: 30-Jul-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

相关型号:

SS8PH9HE3/87A

Rectifier Diode, Schottky, 1 Element, 8A, 90V V(RRM),

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SS8PH9HG3/86A

DIODE 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SS8PH9HG3/87A

DIODE 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SS8PH9HM3/87A

DIODE 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SS8PH9HM3_A/H

DIODE SCHOTTKY 90V 8A TO277A

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SS8PH9_11

High Current Density Surface Mount High Voltage Schottky Rectifier

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SS9011

AM Converter, AM/FM IF Amplifier General Purpose Transistor

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
FAIRCHILD

SS9011-F

Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
SAMSUNG

SS9011EJ18Z

Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
FAIRCHILD

SS9011F

Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
FAIRCHILD

SS9011FBU

Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
FAIRCHILD

SS9011FBU

30mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ROCHESTER