ST183C04CEM0LP [VISHAY]
Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-3;
| 型号： | ST183C04CEM0LP |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-3 |
| 文件： | 总10页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST183CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
RoHS
• Center amplifying gate
COMPLIANT
• International standard case TO-200AB (A-PUK)
• Guaranteed high dV/dt
TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• Inverters
IT(AV)
370 A
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
370
UNITS
A
°C
A
IT(AV)
Ths
55
690
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
4900
A
5130
120
kA2s
110
V
DRM/VRRM
400 to 800
10 to 20
- 40 to 125
V
tq
Range
µs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
REPETITIVE PEAK VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
04
08
400
800
500
900
ST183C..C
40
Document Number: 94368
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST183CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
5450
180° el
180° el
1220
50 Hz
770
730
600
350
660
600
490
270
1160
1090
1040
730
4960
2420
1370
680
400 Hz
1270
1210
860
2760
1600
800
A
V
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
50
VDRM
50
50
VDRM
-
50
VDRM
-
A/µs
°C
40
55
40
55
40
55
47/0.22
47/0.22
47/0.22
Ω/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
VALUES
UNITS
370 (130)
55 (85)
690
A
Maximum average on-state current
at heatsink temperature
°C
Maximum RMS on-state current
IT(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
4900
5130
4120
4310
120
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
110
Maximum I2t for fusing
I2t
kA2s
85
100 % VRRM
reapplied
78
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
1200
kA2√s
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
Maximum peak on-state voltage
VTM
1.80
V
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
1.40
1.45
0.67
0.58
600
VT(TO)2
rt1
rt2
IH
IL
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
TJ = 25 °C, IT > 30 A
mA
Typical latching current
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94368
Revision: 30-Apr-08
ST183CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned on current
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
dI/dt
1000
A/µs
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
Typical delay time
td
1.1
µs
TJ = TJ maximum,
minimum
maximum
10
20
Maximum turn-off time
tq
I
TM = 300 A, commutating dI/dt = 20 A/µs
R = 50 V, tp = 500 µs, dV/dt: See table in device code
V
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM
higher value available on request
,
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/µs
IRRM
IDRM
,
Maximum peak reverse and off-state leakage current
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
60
10
10
20
5
TJ = TJ maximum, f = 50 Hz, d% = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
+ VGM
- VGM
IGT
TJ = TJ maximum, tp ≤ 5 ms
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.17
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.08
K/W
0.033
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.017
4900
(500)
N
(kg)
Approximate weight
Case style
50
g
See dimensions - link at the end of datasheet
TO-200AB (A-PUK)
Document Number: 94368
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST183CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
130
120
110
100
90
130
120
110
100
90
ST183C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
ST183C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Ø
80
Conduction angle
Conduction angle
80
70
70
60
60
50
180°
180°
90°
90°
60°
30°
30°
60°
50
40
120°
120°
40
30
0
40
80
120
160
200
240
50 100 150 200 250 300
350 400 450
0
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
130
120
110
100
90
130
120
110
100
90
ST183C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
ST183C..C Series
(Double side cooled)
RthJC (DC) = 0.08 K/W
Ø
Ø
80
80
Conduction period
Conduction period
70
70
60
60
50
50
90°
60°
30°
90°
40
40
180°
DC
30° 60°
DC
120° 180°
30
30
120°
400
20
20
0
50 100 150 200 250 300 350 400
0
100
200 300
500
600
700
Average On-State Current (A)
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94368
Revision: 30-Apr-08
ST183CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
1000
900
800
700
600
500
400
300
200
100
0
5000
4500
4000
3500
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
180°
120°
90°
60°
30°
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
3000
2500
2000
Conduction angle
ST183C..C Series
TJ = 125 °C
ST183C..C Series
0.01
0.1
1
0
50 100 150 200 250 300 350 400 450
Pulse Train Duration (s)
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1400
1200
1000
800
600
400
200
0
10 000
DC
180°
120°
90°
60°
30°
ST183C..C Series
RMS limit
1000
TJ = 25 °C
Ø
TJ = 125 °C
Conduction period
ST183C..C Series
TJ = 125 °C
100
0
100
200 300
400
500
600
700
1
1.5
2
2.5
3
3.5
4
4.5
Average On-State Current (A)
Instantaneous On-State Voltage (V)
Fig. 6 - On-State Power Loss Characteristics
Fig. 9 - On-State Voltage Drop Characteristics
1
0.1
4500
4000
3500
3000
2500
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
ST183C..C Series
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
0.01
0.001
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
ST183C..C Series
2000
0.001
0.01
0.1
1
10
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Document Number: 94368
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST183CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
250
160
ITM = 500 A
ST183C..C Series
TJ = 125 °C
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
140
300 A
200
150
100
50
120
200 A
100
100 A
80
60
50 A
40
ST183C..C Series
TJ = 125 °C
20
0
0
0
20
40
60
80
100
0
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
10 000
10 000
Snubber circuit
Rs = 47 Ω
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
50 Hz
500
500
400
1000
1500
2500
400
100
100
200
200
1000
1500
1000
1000
2500
3000
5000
10 000
3000
5000
ST183C..C Series
Sinusoidal pulse
TC = 40 °C
ST183C..C Series
Sinusoidal pulse
TC = 55 °C
tp
tp
10 000
100
100
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
10 000
1000
100
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
400
200
100
50 Hz
500
400 200 100
500
1000
1000
1500
2500
1000
1500
2500
3000
5000
3000
5000
ST183C..C Series
Trapezoidal pulse
TC = 40 °C
ST183C..C Series
Trapezoidal pulse
TC = 55 °C
tp
tp
dI/dt = 50 A/µs
dI/dt = 50 A/µs
100
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94368
Revision: 30-Apr-08
ST183CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
10 000
1000
100
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
50 Hz
200 100
200 100
400
1000
100
10
500
1000
400
500
1500
1000
2500
3000
5000
1500
2500
3000
5000
ST183C..C Series
Trapezoidal pulse
TC = 40 °C
ST183C..C Series
Trapezoidal pulse
TC = 55 °C
10 000
10 000
tp
tp
dI/dt = 100 A/µs
dI/dt = 100 A/µs
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
100 000
10 000
1000
100
100 000
ST183C..C Series
Rectangular pulse
dI/dt = 50 A/µs
tp
20 joules per pulse
10
10 000
1000
100
20 joules per pulse
4
2
1
0.5
0.3
10
2
4
1
0.2
0.5
0.3
0.2
0.1
0.1
ST183C..C Series
Sinusoidal pulse
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
10
Rectangular gate pulse
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
1
(1)
(2)
(3) (4)
VGD
IGD
Device: ST183C..C Series
0.1
Frequency limited by PG(AV)
10
0.1
0.001
0.01
1
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94368
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
ST183CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
ST
18
3
C
08
C
H
K
-
1
P
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn-off
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case TO-200AB (A-PUK)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
Reapplied dV/dt code (for tq test condition)
tq code
10
12
15
18
20
CN DN EN FN* HN
CM DM EM FM HM
CL DL EL FL* HL
CP DP EP FP HP
CK DK EK FK HK
tq (µs)
0 = Eyelet terminals
(gate and aux. cathode unsoldered leads)
1 = Fast-on terminals
* Standard part number.
All other types available only on request.
(gate and aux. cathode unsoldered leads)
2 = Eyelet terminals
(gate and aux. cathode soldered leads)
3 = Fast-on terminals
(gate and aux. cathode soldered leads)
-
-
Critical dV/dt:
10
11
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95074
Dimensions
www.vishay.com
8
For technical questions, contact: ind-modules@vishay.com
Document Number: 94368
Revision: 30-Apr-08
Outline Dimensions
Vishay Semiconductors
TO-200AB (A-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95074
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
ST183C04CEM0LPBF
Silicon Controlled Rectifier, 690A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
INFINEON
ST183C04CEM0PBF
Silicon Controlled Rectifier, 690A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
INFINEON
ST183C04CEM1L
Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
INFINEON
ST183C04CEM1LP
Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-3
VISHAY
ST183C04CEM1LPBF
Silicon Controlled Rectifier, 690A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
INFINEON
ST183C04CEM1PBF
Silicon Controlled Rectifier, 690A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
INFINEON
ST183C04CEM2LP
Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-3
VISHAY
ST183C04CEM2PBF
Silicon Controlled Rectifier, 690A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
INFINEON
ST183C04CEM3L
Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
INFINEON
ST183C04CEM3P
Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-3
VISHAY
©2020 ICPDF网 联系我们和版权申明