ST330C04L1LPBF [VISHAY]
Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, LEAD FREE, METAL, BPUK-4;
| 型号： | ST330C04L1LPBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, LEAD FREE, METAL, BPUK-4 栅 栅极 |
| 文件： | 总8页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST330CLPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• High profile hockey PUK
• Lead (Pb)-free
TO-200AC (B-PUK)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
IT(AV)
650 A
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
650
UNITS
A
°C
A
IT(AV)
Ths
55
1230
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
9000
A
9420
405
kA2s
370
VDRM/VRRM
400 to 2000
100
V
tq
Typical
µs
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK
V
RSM, MAXIMUM
I
DRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
04
08
12
14
16
18
20
400
800
500
900
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
ST330C..L
50
Document Number: 94408
Revision: 16-Oct-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST330CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 650 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
650 (314)
55 (75)
1230
9000
9420
7570
7920
405
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
370
Maximum I2t for fusing
I2t
kA2s
287
100 % VRRM
reapplied
262
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
4050
0.91
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
V
0.93
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
0.57
mΩ
V
rt2
0.57
VTM
IH
Ipk = 1730 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.90
Maximum holding current
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
1000
1.0
A/µs
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
Typical turn-off time
td
tq
µs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
100
V
R = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
50
V/µs
mA
Maximum peak reverse and
off-state leakage current
IRRM
,
IDRM
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94408
Revision: 16-Oct-08
ST330CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 650 A
Vishay High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.11
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.06
K/W
0.011
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.005
9800
(1000)
N
(kg)
Approximate weight
Case style
250
g
See dimensions - link at the end of datasheet
TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 94408
Revision: 16-Oct-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST330CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 650 A
Vishay High Power Products
130
130
120
ST330C . . L Se r ie s
ST330C..LSeries
120
(Double Side Cooled)
(Single Side Cooled)
R
(DC) = 0.05 K/W
R
(DC) = 0.11 K/ W
110
100
90
80
70
60
50
40
30
20
thJ-hs
thJ-hs
110
100
90
Conduction Angle
Conduction Period
80
70
30°
30°
60°
60°
60
90°
120°
90°
50
180°
120°
180°
40
DC
30
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
120
110
100
90
1600
1400
1200
1000
800
600
400
200
0
ST330C..L Series
180°
120°
90°
(Single Side Cooled)
R
(DC) = 0.11 K/W
thJ-hs
60°
30°
RM S Lim it
Conduction Period
80
70
60
Conduction Angle
ST330C . . L Se rie s
50
30°
60°
40
90°
120°
T = 125°C
J
30
180°
DC
600
20
0
200
400
800
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
120
110
100
90
2200
ST330C..LSeries
DC
180°
120°
90°
2000
1800
1600
1400
1200
1000
800
(Double Side Cooled)
R
(DC) = 0.05 K/W
thJ-hs
60°
30°
Conduction Angle
RM S Lim it
80
70
Conduction Period
ST330C .. L Se r ie s
60
30°
60°
50
600
90°
120°
180°
40
400
T = 125°C
J
30
200
20
0
0
200
400
600
800
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94408
Revision: 16-Oct-08
ST330CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 650 A
Vishay High Power Products
9000
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
ST330C . . L Se r ie s
ST330C..L Series
1
10
100
0.01
0.1
Pulse Tra in Dura t ion (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Tj = 125 °C
1000
Tj = 25 °C
ST330C..L Series
100
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
1
0.1
St e a d y St a t e V a l u e
= 0.11 K/W
R
thJ-hs
(Single Side Cooled)
= 0.05 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
0.001
ST33 0C . . L Se r i e s
1
0.001
0.01
0.1
10
Sq u a re Wa v e Pu lse D u r a t io n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Document Number: 94408
Revision: 16-Oct-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST330CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 650 A
Vishay High Power Products
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
10
1
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
Frequency Limited by PG(AV)
10 100
Device: ST330C..LSeries
0.1
0.1
0.001
0.01
1
In st a nt a ne o us Ga t e C urre nt (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
33
0
C
16
L
1
-
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
L = PUK case TO-200AC (B-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
8
9
-
-
Critical dV/dt:
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95076
Dimensions
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94408
Revision: 16-Oct-08
Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
34 (1.34) DIA. MAX.
2 places
0.7 (0.03) MIN.
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
Document Number: 91000
1
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