ST733C04LCP0LP [VISHAY]
Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, CERAMIC, B-PUK-2;
| 型号： | ST733C04LCP0LP |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, CERAMIC, B-PUK-2 |
| 文件： | 总10页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST733CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
RoHS
COMPLIANT
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AC (B-PUK)
• High surge current capability
• Low thermal impedance
TO-200AC (B-PUK)
• High speed performance
• Lead (Pb)-free
• Designed and qualified for industrial level
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• Inverters
IT(AV)
940 A
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
940
UNITS
A
°C
A
IT(AV)
Ths
55
1900
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
20 000
20 950
2000
A
kA2s
1820
V
DRM/VRRM
400 to 800
10 to 20
- 40 to 125
V
tq
Range
µs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
REPETITIVE PEAK VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
04
08
400
800
500
900
ST733C..L
75
Document Number: 94378
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
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1
ST733CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
Vishay High Power Products
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
6800
180° el
180° el
3580
50 Hz
2200
2050
1370
500
1900
1660
1070
370
3100
3130
2450
980
5920
3240
1780
770
400 Hz
3600
2900
1220
3750
2120
960
A
V
1000 Hz
2500 Hz
Recovery voltage VR
Voltage before turn-on VD
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
50
VDRM
50
50
VDRM
-
50
VDRM
-
A/µs
°C
40
55
40
55
40
55
10/0.47
10/0.47
10/0.47
Ω/µF
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
VALUES
UNITS
940 (350)
55 (85)
1900
A
Maximum average on-state
current at heatsink temperature
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
20 000
20 950
16 800
17 600
2000
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
1820
Maximum I2t for fusing
I2t
kA2s
1410
100 % VRRM
reapplied
1290
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
20 000
kA2√s
ITM = 1700 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
Maximum peak on-state voltage
VTM
1.63
V
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
1.09
1.20
0.32
0.29
600
VT(TO)2
rt1
rt2
IH
IL
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
TJ = 25 °C, IT > 30 A
mA
Typical latching current
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
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Document Number: 94378
Revision: 11-Aug-08
ST733CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
Gate pulse: 20 V 20 Ω, 10 µs 0.5 µs rise time
dI/dt
1000
A/µs
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
Typical delay time
td
1.5
µs
TJ = TJ maximum,
minimum
maximum
10
20
Maximum turn-off time
tq
I
TM = 550 A, commutating dI/dt = 40 A/µs
R = 50 V, tp = 500 µs, dV/dt: see table in device code
V
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM
higher value available on request
,
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/µs
IRRM
IDRM
,
Maximum peak reverse and off-state leakage current
TJ = TJ maximum, rated VDRM/VRRM applied
75
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
60
10
10
20
5
TJ = TJ maximum, f = 50 Hz, d% = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
+ VGM
- VGM
IGT
TJ = TJ maximum, tp ≤ 5 ms
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.073
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.031
K/W
0.011
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.005
14 700
(1500)
N
(kg)
Approximate weight
Case style
255
g
See dimensions - link at the end of datasheet TO-200AC (B-PUK)
Document Number: 94378
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
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3
ST733CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
Vishay High Power Products
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.021
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.022
0.036
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
130
120
110
100
90
130
120
110
100
90
ST733C..LSeries
ST7 33C . . L Se rie s
(Single Side Cooled)
(Double Side Cooled)
R
(DC) = 0.073 K/W
R
(DC) = 0.031 K/W
thJ-hs
thJ-hs
Conduction Angle
80
Conduction Angle
70
80
60
30°
70
60°
30°
50
60°
90°
90°
60
120°
180°
120°
40
180°
50
30
40
20
0
100 200 300 400 500 600 700
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
130
120
110
100
90
130
120
110
100
90
ST733C . . L Se r ie s
ST733C . . L Se rie s
(Single Side Cooled)
(Double Side Cooled)
R
(DC) = 0.073 K/W
R
(DC) = 0.031 K/W
thJ-hs
thJ-hs
Conduction Period
Conduction Period
80
80
70
70
30°
60
60
60°
30°
50
50
90°
60°
90°
40
120°
40
120°
180°
30
30
180°
DC
DC
800 1000
20
20
0
500
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
1000
1500
2000
0
200
400
600
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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Document Number: 94378
Revision: 11-Aug-08
ST733CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
Vishay High Power Products
2500
2000
1500
1000
500
20000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
180°
120°
90°
18000
Initial T = 125°C
J
RM S Lim it
60°
No Voltage Reapplied
30°
16000
14000
Ra t e d V
Re a p p lie d
RRM
12000
10000
8000
Conduction Angle
ST733C . . L Se rie s
ST733C..L Series
T = 125°C
J
0
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
0.01
0.1
Pulse Train Duration (s)
1
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
2500
10000
180°
120°
90°
2000
1500
1000
500
0
RM S Lim it
60°
30°
1000
100
T = 25 ° C
J
T = 125°C
J
Conduction Angle
ST733C . . L Se rie s
ST733C..L Series
T = 125°C
J
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
InstantaneousOn-state Voltage (V)
Fig. 6 - On-State Power Loss Characteristics
Fig. 9 - On-State Voltage Drop Characteristics
18000
0.1
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
ST733C . . L Se r ie s
Initial T = 125°C
J
16000
14000
12000
10000
8000
@60 Hz 0.0083 s
@50 Hz 0.0100 s
0.01
St e a d y St a t e V a lu e
= 0.073 K/W
R
thJ-hs
(Single Side Cooled)
= 0.031 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST733C..LSeries
0.001
0.001 0.01
1
10
100
0.1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Square Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJC Characteristics
Document Number: 94378
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
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5
ST733CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
Vishay High Power Products
250
200
150
100
50
450
I
= 1500 A
TM
ST7 33C . . L Se r ie s
T = 125 °C
400
350
300
250
200
150
100
50
I
= 1500 A
TM
J
1000 A
500 A
1000 A
500 A
ST733C..LSeries
T = 125 °C
J
0
0
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
1E5
Sn u b b e r c ir c u it
Snubber circ uit
R
C
V
= 10 o hm s
= 0.47 µF
= 80%V
R
C
V
= 10 o hm s
= 0.47 µF
= 80%V
s
s
D
s
s
D
DRM
DRM
1E4
1E3
1E2
50 Hz
100
200
50 Hz
100
400
200
400
1000
1000
1500
1500
2500
3000
2500
3000
5000
ST7 33 C . . L Series
Sin u so id a l p u lse
ST733C..LSeries
Sinusoidal pulse
= 40°C
T
= 55 ° C
5000
T
tp
C
C
tp
1E
1
1
E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id t h (µs)
Pulse Basew id th (µs)
Fig. 13 - Frequency Characteristics
1E5
1E4
1E3
1E2
Snubber circuit
ST733C..LSeries
ST733C..L Series
Trapezoidal pulse
Snubber circuit
R =10 ohms
Trapezoidal pulse
R =10 ohms
s
s
C =0.47µF
T =55°C
C =0.47µF
s
T =40°C
s
C
C
tp
V =80%V
D
di/dt=50A/ µs
V =80%V
D
DRM
di/ dt=50A/µs
DRM
100
50 Hz
200
50 Hz
100
200
400
400
500
500
1000
1500
2000
2500
3000
1000
1500
2000
2500
3000
5000
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth(µs)
PulseBasewidth(µs)
Fig. 14 - Frequency Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94378
Revision: 11-Aug-08
ST733CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
Vishay High Power Products
1E5
1E4
1E3
1E2
Snubber circuit
R =10 ohms
ST733C..LSeries
Trapezoidal pulse
C
ST733C..L Series
Snubber circuit
R =10 ohms
Trapezoidal pulse
s
s
C =0.47µF
T =55°C
s
C =0.47µF
s
T =40°C
C
tp
V =80%V
D
di/dt=100A/µs
V =80%V
D
DRM
di/ dt=100A/µs
DRM
50Hz
50Hz
100
100
200
400
200
400
1E3
500
500
1000
1500
2000
1000
1500
2000
2500
2500
3000
3000
5000
1E1
1E2
Pulse Basewidth(µs)
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth(µs)
Fig. 15 - Frequency Characteristics
1E5
1E4
1E3
1E2
1E1
ST7 33 C . . L Se rie s
Re c t a ng ula r p ulse
di/dt = 50A/µs
ST733C..LSeries
Sinusoidal pulse
tp
tp
20 joules per pulse
20 joulesper pulse
10
5
10
3
5
2
3
1
2
0.5
1
0.4
0.3
0.5
0.4
0.3
1E1
1E2
1E3
1E4
1E1
1E2
Pulse Ba sew id t h (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
1E3
1E4
Pulse Ba sew id t h (µs)
100
10
1
Rectangulargatepulse
(1) PGM=10W, tp =20ms
(2) PGM=20W, tp =10ms
(3) PGM=40W, tp =5ms
(4) PGM=60W, tp =3.3ms
a) Recommended load line for
rated di/ dt :20V, 10ohms; tr<=1µs
b) Recommended load line for
<=30% rateddi/ dt :10V, 10ohms
tr<=1 µs
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
Device:ST733C..L Series
0.1
Frequency Limitedby PG(AV)
0.1
0.001
0.01
1
10
100
InstantaneousGate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94378
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
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7
ST733CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
ST
73
3
C
08
L
H
K
1
-
P
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn-off
C = Ceramic PUK
Voltage code x 100 = VRRM
(see Voltage Ratings table)
dV/dt - tq combinations available
6
7
8
9
-
-
-
-
L = PUK case TO-200AC (B-PUK)
dV/dt (V/µs) 20 50 100 200 400
Reapplied dV/dt code (for tq test condition)
tq code
10
12
15
18
20
CN DN EN
CM DM EM
CL DL EL
-
-
FM*
FL*
-
tq (µs)
HL
0 = Eyelet terminals
(gate and auxiliary cathode unsoldered leads)
CP DP EP FP HP
CK DK EK FK
H
1 = Fast-on terminals
* Standard part number.
All other types available only on request.
(gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals
(gate and auxiliary cathode soldered leads)
3 = Fast-on terminals
(gate and auxiliary cathode soldered leads)
-
-
Critical dV/dt:
None = 500 V/µs (standard value)
10
11
L = 1000 V/µs (special selection)
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95076
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94378
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
34 (1.34) DIA. MAX.
2 places
0.7 (0.03) MIN.
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
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1
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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INFINEON
ST733C04LCP1L
Silicon Controlled Rectifier, 1900A I(T)RMS, 940000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON
ST733C04LCP1LP
Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, CERAMIC, B-PUK-2
VISHAY
ST733C04LCP1LPBF
Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON
ST733C04LCP2
Silicon Controlled Rectifier, 1900A I(T)RMS, 940000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON
ST733C04LCP3LP
Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, CERAMIC, B-PUK-2
VISHAY
ST733C04LCP3PBF
Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON
ST733C04LDK0
Silicon Controlled Rectifier, 1900A I(T)RMS, 940000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON
ST733C04LDK0L
Silicon Controlled Rectifier, 1900A I(T)RMS, 940000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON
ST733C04LDK0LPBF
Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON
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