ST780C04L1PBF [VISHAY]

Silicon Controlled Rectifier, 2700A I(T)RMS, 1400000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, METAL, BPUK-2;
ST780C04L1PBF
型号: ST780C04L1PBF
厂家: VISHAY    VISHAY
描述:

Silicon Controlled Rectifier, 2700A I(T)RMS, 1400000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, METAL, BPUK-2

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ST780CLPbF Series  
Vishay High Power Products  
Phase Control Thyristors  
(Hockey PUK Version), 1350 A  
FEATURES  
• Center amplifying gate  
• Metal case with ceramic insulator  
RoHS  
• International standard case TO-200AC (B-PUK)  
• Lead (Pb)-free  
COMPLIANT  
• Designed and qualified for industrial level  
TO-200AC (B-PUK)  
TYPICAL APPLICATIONS  
• DC motor controls  
PRODUCT SUMMARY  
• Controlled DC power supplies  
• AC controllers  
IT(AV)  
1350 A  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
1350  
UNITS  
A
°C  
A
IT(AV)  
Ths  
55  
2700  
IT(RMS)  
ITSM  
I2t  
Ths  
25  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
24 400  
25 600  
2986  
A
kA2s  
2726  
V
DRM/VRRM  
400 to 600  
150  
V
tq  
Typical  
µs  
°C  
TJ  
- 40 to 125  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK  
V
RSM, MAXIMUM  
IDRM/IRRM MAXIMUM  
VOLTAGE  
CODE  
TYPE NUMBER  
AND OFF-STATE VOLTAGE  
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM  
V
mA  
04  
06  
400  
600  
500  
700  
ST780C..L  
80  
Document Number: 94415  
Revision: 11-Aug-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1
ST780CLPbF Series  
Phase Control Thyristors  
(Hockey PUK Version), 1350 A  
Vishay High Power Products  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
180° conduction, half sine wave  
VALUES UNITS  
1350 (500)  
55 (85)  
2700  
A
Maximum average on-state current  
at heatsink temperature  
IT(AV)  
double side (single side) cooled  
°C  
Maximum RMS on-state current  
IT(RMS)  
DC at 25 °C heatsink temperature double side cooled  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
24 400  
25 600  
20 550  
21 500  
2986  
No voltage  
reapplied  
A
Maximum peak, one-cycle  
non-repetitive surge current  
ITSM  
100 % VRRM  
reapplied  
Sinusoidal half wave,  
initial TJ = TJ maximum  
No voltage  
reapplied  
2726  
Maximum I2t for fusing  
I2t  
kA2s  
2112  
100 % VRRM  
reapplied  
1928  
Maximum I2t for fusing  
I2t  
VT(TO)1  
VT(TO)2  
rt1  
t = 0.1 to 10 ms, no voltage reapplied  
29 860  
0.80  
kA2s  
Low level value of threshold voltage  
High level value of threshold voltage  
Low level value of on-state slope resistance  
High level value of on-state slope resistance  
Maximum on-state voltage  
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum  
(I > π x IT(AV)), TJ = TJ maximum  
V
0.90  
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum  
(I > π x IT(AV)), TJ = TJ maximum  
0.14  
mΩ  
V
rt2  
0.13  
VTM  
IH  
Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse  
1.31  
Maximum holding current  
600  
TJ = 25 °C, anode supply 12 V resistive load  
mA  
Typical latching current  
IL  
1000  
SWITCHING  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum non-repetitive rate of rise  
of turned-on current  
Gate drive 20 V, 20 Ω, tr 1 µs  
TJ = TJ maximum, anode voltage 80 % VDRM  
dI/dt  
1000  
A/µs  
Gate current 1 A, dIg/dt = 1 A/µs  
Vd = 0.67 % VDRM, TJ = 25 °C  
Typical delay time  
Typical turn-off time  
td  
tq  
1.0  
µs  
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs,  
150  
V
R = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs  
BLOCKING  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum critical rate of rise of  
off-state voltage  
dV/dt  
TJ = TJ maximum linear to 80 % rated VDRM  
TJ = TJ maximum, rated VDRM/VRRM applied  
500  
80  
V/µs  
mA  
Maximum peak reverse and  
off-state leakage current  
IRRM  
,
IDRM  
www.vishay.com  
2
For technical questions, contact: ind-modules@vishay.com  
Document Number: 94415  
Revision: 11-Aug-08  
ST780CLPbF Series  
Phase Control Thyristors  
(Hockey PUK Version), 1350 A  
Vishay High Power Products  
TRIGGERING  
VALUES  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
TYP. MAX.  
Maximum peak gate power  
PGM  
PG(AV)  
IGM  
TJ = TJ maximum, tp 5 ms  
10.0  
2.0  
3.0  
20  
W
A
TJ = TJ maximum, f = 50 Hz, d% = 50  
TJ = TJ maximum, tp 5 ms  
Maximum average gate power  
Maximum peak positive gate current  
Maximum peak positive gate voltage  
Maximum peak negative gate voltage  
+ VGM  
- VGM  
TJ = TJ maximum, tp 5 ms  
V
5.0  
TJ = - 40 °C  
TJ = 25 °C  
200  
100  
50  
-
200  
-
DC gate current required to trigger  
DC gate voltage required to trigger  
IGT  
mA  
V
Maximum required gate  
trigger/current/voltage are the  
lowest value which will trigger  
all units 12 V anode to cathode  
applied  
TJ = 125 °C  
TJ = - 40 °C  
TJ = 25 °C  
TJ = 125 °C  
-
2.5  
1.8  
1.1  
VGT  
3.0  
-
Maximumgatecurrent/voltage  
not to trigger is the maximum  
TJ = TJ maximum value which will not trigger any  
unit with rated VDRM anode to  
cathode applied  
DC gate current not to trigger  
DC gate voltage not to trigger  
IGD  
10  
mA  
V
VGD  
0.25  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
- 40 to 125  
- 40 to 150  
0.073  
UNITS  
Maximum operating junction temperature range  
Maximum storage temperature range  
TJ  
°C  
TStg  
DC operation single side cooled  
DC operation double side cooled  
DC operation single side cooled  
DC operation double side cooled  
Maximum thermal resistance, junction to heatsink  
RthJ-hs  
0.031  
K/W  
0.011  
Maximum thermal resistance, case to heatsink  
Mounting force, 10 %  
RthC-hs  
0.006  
14 700  
(1500)  
N
(kg)  
Approximate weight  
Case style  
255  
g
See dimensions - link at the end of datasheet  
TO-200AC (B-PUK)  
ΔRthJ-hs CONDUCTION  
SINUSOIDAL CONDUCTION  
RECTANGULAR CONDUCTION  
CONDUCTION ANGLE  
TEST CONDITIONS  
UNITS  
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE  
180°  
120°  
90°  
0.009  
0.011  
0.014  
0.020  
0.036  
0.009  
0.011  
0.014  
0.020  
0.036  
0.006  
0.011  
0.015  
0.021  
0.036  
0.006  
0.011  
0.015  
0.021  
0.036  
TJ = TJ maximum  
K/W  
60°  
30°  
Note  
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC  
Document Number: 94415  
Revision: 11-Aug-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
3
ST780CLPbF Series  
Phase Control Thyristors  
(Hockey PUK Version), 1350 A  
Vishay High Power Products  
130  
130  
120  
ST780C . . L Se r ie s  
ST7 80C . . L Se r ie s  
(Double Side Cooled)  
(Single Side Cooled)  
120  
110  
100  
90  
R
(DC) = 0.031 K/W  
R
(DC) = 0.073 K/W  
110  
100  
90  
thJ-hs  
thJ-hs  
Conduction Period  
80  
Conduction Angle  
70  
80  
30°  
60  
30°  
70  
60°  
60°  
90°  
50  
90°  
60  
120°  
120°  
40  
180°  
800  
180°  
DC  
50  
30  
20  
40  
0
500 1000 1500 2000 2500 3000  
0
200  
400  
600  
1000  
Average On-state Current (A)  
Fig. 1 - Current Ratings Characteristics  
Average On-state Current (A)  
Fig. 4 - Current Ratings Characteristics  
130  
120  
110  
100  
90  
2500  
2000  
1500  
1000  
500  
ST780C . . L Se rie s  
180°  
120°  
90°  
(Single Side Cooled)  
R
(DC) = 0.073 K/W  
thJ-hs  
60°  
30°  
RMS Lim it  
Conduction Period  
80  
70  
60  
Conduction Angle  
ST780C..L Series  
30°  
50  
60°  
40  
90°  
120°  
T = 125°C  
J
30  
180°  
DC  
0
20  
0
200 400 600 800 1000 1200 1400  
0
400  
800  
1200 1600 2000  
Average On-state Current (A)  
Fig. 5 - On-State Power Loss Characteristics  
Average On-state Current (A)  
Fig. 2 - Current Ratings Characteristics  
130  
120  
110  
100  
90  
3500  
ST780C..L Series  
DC  
180°  
120°  
90°  
(Double Side Cooled)  
3000  
2500  
2000  
1500  
1000  
500  
R
(DC) = 0.031 K/W  
thJ-hs  
60°  
30°  
Conduction Angle  
80  
RM S Lim it  
70  
60  
Conduction Period  
ST780C..L Series  
30°  
60°  
50  
90°  
120°  
40  
180°  
T = 125°C  
J
30  
20  
0
0
400  
800  
1200 1600 2000  
0
500 1000 1500 2000 2500 3000  
Average On-state Current (A)  
Average On-state Current (A)  
Fig. 3 - Current Ratings Characteristics  
Fig. 6 - On-State Power Loss Characteristics  
www.vishay.com  
4
For technical questions, contact: ind-modules@vishay.com  
Document Number: 94415  
Revision: 11-Aug-08  
ST780CLPbF Series  
Phase Control Thyristors  
(Hockey PUK Version), 1350 A  
Vishay High Power Products  
26000  
22000  
20000  
18000  
16000  
14000  
12000  
10000  
Maximum Non Repetitive Surge Current  
VersusPulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
At Any Rated Load Condition And With  
Rated V  
RRM  
Applied Following Surge.  
24000  
Initial T = 125°C  
J
Initial T = 125°C  
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
J
22000  
No Voltage Reapplied  
Ra t e d V  
Re a p p lie d  
20000  
RRM  
18000  
16000  
14000  
12000 ST780C . . L Se rie s  
ST780C . . L Se r ie s  
10000  
0.01  
0.1  
Pulse Train Duration (s)  
1
1
10  
100  
NumberOf Equal Amplitude Half Cycle Current Pulses(N)  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
10000  
T = 25° C  
J
1000  
T = 125°C  
J
ST780C . . L Se r ie s  
100  
0.5  
1
1.5  
2
2.5  
InstantaneousOn-state Voltage (V)  
Fig. 9 - On-State Voltage Drop Characteristics  
0.1  
0.01  
Steady State Value  
= 0.073 K/ W  
R
thJ-hs  
(Single Side Cooled)  
= 0.031 K/ W  
R
thJ-hs  
(Double Side Cooled)  
(DC Operation)  
ST780C . . L Se r ie s  
1
0.001  
0.001  
0.01  
0.1  
10  
Sq u a re Wa v e Pu lse D u r a t io n ( s)  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics  
Document Number: 94415  
Revision: 11-Aug-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
5
ST780CLPbF Series  
Phase Control Thyristors  
(Hockey PUK Version), 1350 A  
Vishay High Power Products  
100  
Rectangular gate pulse  
(1) PGM = 10W, tp = 4ms  
(2) PGM = 20W, tp = 2ms  
(3) PGM = 40W, tp = 1ms  
(4) PGM = 60W, tp = 0.66ms  
a) Recommended load line for  
rated di/dt : 20V, 10ohms; tr<=1 µs  
b) Recommended load line for  
<=30%rated di/ dt : 10V, 10ohms  
tr<=1 µs  
10  
1
(a)  
(b)  
(2)  
(1)  
(3) (4)  
VGD  
IGD  
Frequency Limited by PG(AV)  
10 100  
Device: ST780C..LSeries  
0.1  
0.1  
0.001  
0.01  
1
InstantaneousGate Current (A)  
Fig. 11 - Gate Characteristics  
ORDERING INFORMATION TABLE  
Device code  
ST  
78  
0
C
06  
L
1
-
PbF  
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
Thyristor  
Essential part number  
0 = Converter grade  
-
-
-
-
C = Ceramic PUK  
Voltage code x 100 = VRRM (see Voltage Ratings table)  
L = PUK case TO-200AC (B-PUK)  
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)  
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)  
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)  
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)  
None = 500 V/µs (standard selection)  
L = 1000 V/µs (special selection)  
8
9
-
-
Critical dV/dt:  
Lead (Pb)-free  
LINKS TO RELATED DOCUMENTS  
http://www.vishay.com/doc?95076  
Dimensions  
www.vishay.com  
6
For technical questions, contact: ind-modules@vishay.com  
Document Number: 94415  
Revision: 11-Aug-08  
Outline Dimensions  
Vishay Semiconductors  
TO-200AC (B-PUK)  
DIMENSIONS in millimeters (inches)  
Creepage distance: 36.33 (1.430) minimum  
Strike distance: 17.43 (0.686) minimum  
34 (1.34) DIA. MAX.  
2 places  
0.7 (0.03) MIN.  
27 (1.06) MAX.  
Pin receptacle  
AMP. 60598-1  
0.7 (0.03) MIN.  
53 (2.09) DIA. MAX.  
6.2 (0.24) MIN.  
20° 5°  
4.7 (0.18)  
36.5 (1.44)  
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep  
Quote between upper and lower pole pieces has to be considered after  
application of mounting force (see thermal and mechanical specification)  
Document Number: 95076  
Revision: 01-Aug-07  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
1

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