SUB50P05-13LT [VISHAY]
Transistor,;
VISHAY 
SUB50P05-13LT
Vishay Siliconix
P-Channel 55-V (D-S) MOSFET with Sensing Diode
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.0135 @ V = –10 V
–50
GS
–55
a
0.019 @ V = –4.5 V
GS
–50
S
2
D PAK-5L
T
T
1
2
D
1
D
2
G
1 2 3 4 5
D
P-Channel MOSFET
G
D
S
T
2
T
1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–55
DS
V
GS
"20
V
a
T
= 25_C
= 100_C
–50
C
d
Continuous Drain Current (T = 175_C)
I
J
D
a
T
–50
C
A
Pulsed Drain Current
I
–200
DM
d
a
Continous Diode Current (Diode Conduction)
I
S
–50
a
Avalanche Current
I
–50
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
125
mJ
c
T
= 25_C
= 25_C
200
C
a
Maximum Power Dissipation
P
W
D
d
T
3.75
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
d
Junction-to-Ambient
PCB Mount
R
40
thJA
thJC
C/W
Junction-to-Case
R
0.75
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71228
S-04525—Rev. B, 20-Aug-01
www.vishay.com
1
SUB50P05-13LT
Vishay Siliconix
MOSFET SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = –250 mA
–55
–1
(BR)DSS
GS
D
V
V
DS
= V , I = –250 mA
V
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
–1
nA
GS
GSS
V
DS
= –44 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –44 V, V = 0 V, T = 175_C
–250
GS
J
a
On-State Drain Current
I
V
= –5 V, V = –10 V
–120
A
D(on)
DS
GS
V
= –10 V, I = –30 A
0.011
0.0135
0.021
0.027
0.019
–830
–55
GS
D
V
V
= –10 V, I = –30 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= –10 V, I = –30 A, T = 175_C
GS
D
J
V
GS
= –4.5 V, I = –20 A
D
V
DS
= –25 V, I = –250 mA
Sense Diode Forward Voltage
V
FD
–770
–25
F
mV
S
From I = –125 mA to I = –250 mA
Sense Diode Forward Voltage Increase
DV
F
F
F
a
Forward Transconductance
g
fs
V
DS
= –25 V, I = –30 A
50
D
Dynamicb
Input Capacitance
C
6450
1050
520
107
28
160
iss
Output Capacitance
C
oss
V
= 0 V, V = –25 V, f = 1 MHz
pF
nC
GS
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
g
c
Gate-Source Charge
Q
Q
V
= –30 V, V = –10 V, I = –50 A
GS D
gs
gd
DS
c
Gate-Drain Charge
22
c
Turn-On Delay Time
t
15
25
d(on)
c
Rise Time
t
190
145
265
325
220
450
r
V
= –30 V, R = 0.6 W
L
DD
ns
c
Turn-Off Delay Time
t
d(off)
I
D
] –50 A, V
= –10 V, R = 2.5 W
GEN G
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
–50
–200
–1.5
110
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= –50 A, V = 0 V
–1.1
55
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
–1.6
0.04
–2.0
12
I
F
= –50 A, di/dt = 100 A/ms
Q
mC
rr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71228
www.vishay.com
S-04525—Rev. B, 20-Aug-01
2
SUB50P05-13LT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
150
100
50
6 V
V
= 10 thru 7 V
GS
T
= –55_C
C
200
25_C
5 V
4 V
150
100
50
125_C
1, 2 V
6
3 V
8
0
0
0
2
4
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
100
80
60
40
20
0
0.030
0.024
0.018
0.012
0.006
0.000
T
= –55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
60
80
100
120
0
20
40
60
80
100
120
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
Gate Charge
20
16
12
8
8000
6000
4000
2000
0
C
iss
V
= 30 V
= 50 A
GS
I
D
4
C
oss
C
rss
0
0
11
22
33
44
55
0
50
100
150
200
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
Document Number: 71228
www.vishay.com
S-04525—Rev. B, 20-Aug-01
3
SUB50P05-13LT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
V
= 10 V
= 30 A
GS
I
D
1.6
1.2
0.8
0.4
0.0
T
= 150_C
J
10
T
= 25_C
J
1
–50 –25
0
25
50
75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
J
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
70
65
60
55
50
I
D
= 250 mA
100
10
1
I
AV
(A) @ T = 150_C
A
I
AV
(A) @ T = 25_C
A
0.1
–50 –25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
– Junction Temperature (_C)
J
Sense Diode Forward Voltage vs. Temperature
Sense Diode Forward Voltage
1.0
0.8
0.6
0.4
0.2
0.0
0.01
I
D
= 250 mA
0.001
0.0001
I
D
= 125 mA
T
= 150_C
J
T
= 25_C
J
0.00001
0.000001
0
25
50
75
100
125
150
0
0.2
0.4
V
0.6
(V)
0.8
1.0
T
– Junction Temperature (_C)
J
F
Document Number: 71228
www.vishay.com
S-04525—Rev. B, 20-Aug-01
4
SUB50P05-13LT
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
60
50
40
30
20
10
0
10 ms
Limited
100 ms
by r
DS(on)
100
10
1 ms
10 ms
100 ms
dc
T
= 25_C
C
1
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
– Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 71228
www.vishay.com
S-04525—Rev. B, 20-Aug-01
5
相关型号：
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VISHAY
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