SUB75N03-07 [VISHAY]
N-Channel 30-V (D-S) 175C MOSFET; N通道30 -V （ D- S） 175℃ MOSFET
| 型号： | SUB75N03-07 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) 175C MOSFET |
| 文件： | 总4页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB75N03-07
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.007 @ V = 10 V
75
GS
30
0.01 @ V = 4.5 V
GS
70
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
Top View
S
N-Channel MOSFET
SUB75N03-07
SUP75N03-07
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
a
T
C
= 25_C
75
Continuous Drain Current (T = 175_C)
I
D
J
T
C
= 100_C
64
240
75
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
280
mJ
W
AR
c
Power Dissipation
T
C
= 25_C
P
120
D
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
Junction-to-Ambient
Junction-to-Case
R
thJA
thJC
C/W
Free Air (TO-220AB)
62.5
1.25
R
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-1
SUP/SUB75N03-07
Vishay Siliconix
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
1
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
Gate Threshold Voltage
Gate-Body Leakage
V
2
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
1
nA
GS
GSS
V
DS
= 30 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
V
V
= 30 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 30 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V = 5 V, V = 10 V
DS GS
120
A
D(on)
V
= 10 V, I = 30 A
D
0.006
0.007
0.011
0.015
0.01
GS
V
V
= 10 V, I = 30 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 30 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 20 A
D
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
20
S
D
Dynamicb
Input Capacitance
C
5600
1100
450
70
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
nC
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
130
g
c
Gate-Source Charge
Q
gs
Q
gd
V
DS
= 15 V, V = 10 V, I = 75 A
18
GS
D
c
Gate-Drain Charge
10
c
Turn-On Delay Time
t
18
30
20
d(on)
c
Rise Time
t
r
12
V
DD
= 15 V, R = 0.2 W
L
ns
c
I
D
] 75 A, V
= 10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
60
120
40
d(off)
c
Fall Time
t
f
22
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
75
s
A
Pulsed Current
I
200
1.5
100
SM
a
Forward Voltage
V
I
= 75 A, V = 0 V
1.2
55
V
SD
F
GS
Reverse Recovery Time
t
rr
I
F
= 75 A, di/dt = 100 A/ms
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB75N03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
150
100
50
100
80
60
40
20
0
V
GS
= 10, 9, 8, 7, 6 V
5 V
4 V
T
= 125_C
C
25_C
3 V
8
–55_C
0
0
2
4
6
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
120
100
80
60
40
20
0
0.015
0.012
0.009
0.006
0.003
0
T
C
= –55_C
25_C
V
= 4.5 V
= 10 V
GS
125_C
V
GS
0
10
V
20
30
40
50
0
20
40
60
80
100
– Gate-to-Source Voltage (V)
GS
I
D
– Drain Current (A)
Capacitance
Gate Charge
8000
6000
4000
2000
0
20
16
12
8
V
= 10 V
= 75 A
GS
C
iss
I
D
C
oss
4
C
rss
0
0
6
12
18
24
30
0
20
40
Q – Total Gate Charge (nC)
g
60
80
100
120
V
– Drain-to-Source Voltage (V)
DS
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB75N03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
10
T = 25_C
J
1
0.1
–50 –25
0
25
50
75 100 125 150 175
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
500
80
60
40
20
0
10 ms
Limited
by r
DS(on)
100
100 ms
1 ms
10
10 ms
T
= 25_C
C
100 ms
dc
Single Pulse
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-4
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