SUB85N02-03 [VISHAY]
N-Channel 20-V (D-S) 175 Degree Celcious MOSFET; N通道20 -V （D -S ） 175度Celcious MOSFET
| 型号： | SUB85N02-03 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) 175 Degree Celcious MOSFET |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB85N02-03
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)a
0.003 @ V = 4.5 V
GS
85
85
85
0.0034 @ V = 2.5 V
GS
20
0.0038 @ V = 1.8 V
GS
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
Ordering Information:
SUB85N02-03—E3 (Lead Free)
G D
Top View
S
S
Ordering Information:
SUP85N02-03—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
"8
DS
V
V
GS
T
= 25_C
= 100_C
85
C
a
Continuous Drain Current (T = 175_C)
I
D
J
T
85
C
A
Pulsed Drain Current
Avalanche Current
I
240
DM
I
30
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
45
mJ
W
AR
a
Power Dissipation
T
= 25_C
P
250
C
D
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
PCB Mount (TO-263)
40
62.5
0.6
Junction-to-Ambient
Junction-to-Case
R
R
thJA
Free Air (TO-220AB)
_C/W
thJC
Notes:
a. See SOA curve for voltage derating.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71421
S-32619—Rev. B, 29-Dec-03
www.vishay.com
1
SUP/SUB85N02-03
Vishay Siliconix
MOSFET SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 2 mA
20
(BR)DSS
GS D
V
V
= V , I = 2 mA
GS DS
V
0.45
DS
DS
GS(th)
V
= 0 V, V = "8 V
I
"100
1
nA
GS
GSS
V
DS
= 20 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 20 V, V = 0 V, T = 125_C
250
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 4.5 V
120
A
D(on)
GS
V
= 4.5 V, I = 30 A
0.0025
0.003
0.0042
0.005
GS
D
V
V
= 4.5 V, I = 30 A, T = 125_C
GS
D
J
a
= 4.5 V, I = 30 A, T = 175_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
GS
= 2.5 V, I = 30 A
0.0027
0.003
0.0034
0.0038
D
V
GS
= 1.8 V, I = 30 A
D
a
Forward Transconductance
g
fs
V
DS
= 5 V, I = 30 A
30
S
D
Dynamicb
Input Capacitance
C
21250
2350
1520
140
18
iss
Output Capacitance
C
oss
V
= 0 V, V = 20 V, f = 1 MHz
pF
nC
GS DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
200
g
c
Gate-Source Charge
Q
Q
V
DS
= 10 V, V = 4.5 V, I = 85 A
gs
gd
GS
D
c
Gate-Drain Charge
24
c
Turn-On Delay Time
t
20
30
d(on)
c
Rise Time
t
200
450
320
300
670
480
r
V
= 10 V, R = 0.12 W
L
DD
ns
c
I
D
] 85 A, V
= 4.5 V, R = 2.5 W
GEN g
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Pulsed Current
I
240
1.5
A
V
SM
a
Forward Voltage
V
SD
I
F
= 100 A, V = 0 V
1.2
75
GS
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
150
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71421
S-32619—Rev. B, 29-Dec-03
www.vishay.com
2
SUP/SUB85N02-03
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
250
200
150
100
50
T
= −55_C
C
V
GS
= 4.5 thru 2 V
25_C
200
150
100
50
125_C
1.5 V
1, 0.5 V
8
0
0
0.0
0
2
4
6
10
0.5
1.0
1.5
2.0
2.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
500
400
300
200
100
0
0.005
0.004
0.003
0.002
0.001
0.000
T
= −55_C
C
V
GS
= 1.8 V
25_C
125_C
V
GS
= 4.5 V
V
GS
= 2.5 V
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
30000
24000
18000
12000
6000
0
8
6
4
2
0
V
D
= 10 V
DS
C
iss
I
= 30 A
C
oss
C
rss
0
4
8
12
16
20
0
50
100
Q − Total Gate Charge (nC)
g
150
200
250
V
− Drain-to-Source Voltage (V)
DS
Document Number: 71421
S-32619—Rev. B, 29-Dec-03
www.vishay.com
3
SUP/SUB85N02-03
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
100
V
D
= 4.5 V
GS
I
= 30 A
1.5
1.2
0.9
0.6
0.3
0.0
T = 150_C
J
T = 25_C
J
10
1
−50 −25
0
25
50
75 100 125 150 175
0
0.2
V
0.4
0.6
0.8
1.0
T
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
J
SD
Drain-Source Voltage Breakdown
vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
30
0.020
0.016
0.012
0.008
0.004
0.000
I
D
= 2 mA
28
26
24
22
I
D
= 30 A
−50 −25
0
25
50
75
100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T
− Junction Temperature (_C)
V
GS
− Gate-to-Source Voltage (V)
J
Document Number: 71421
S-32619—Rev. B, 29-Dec-03
www.vishay.com
4
SUP/SUB85N02-03
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
1000
100
80
60
40
20
0
Limited
by r
DS(on)
10 ms
100
10
1
100 ms
1 ms
10 ms
100 ms
dc
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
− Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 71421
S-32619—Rev. B, 29-Dec-03
www.vishay.com
5
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