SUD50P10-43-E3 [VISHAY]
TRANSISTOR 9.4 A, 100 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power;
| 型号： | SUD50P10-43-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 9.4 A, 100 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50P10-43
Vishay Siliconix
New Product
P-Channel 100-V (D-S) 175 _C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)a
Qg (Typ)
RoHS
–100
0.043 at V = –10 V
GS
–38
105 nC
COMPLIANT
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
–100
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
GS
V
V
"20
a
T
T
= 25 _C
= 70 _C
= 25 _C
= 70 _C
–38
C
a
–31.8
C
Continuous Drain Current (T = 175 _C)
I
J
D
b, c
T
A
–9.4
b, c
T
A
–7.8
A
Pulsed Drain Current
I
–50
DM
a
T
= 25 _C
= 25 _C
–50
C
Continuous Source-Drain Diode Current
I
S
b, c
T
A
–6.9
Avalanche Current
I
AS
–40
80
L = 0.1 mH
Single-Pulse Avalanche Energy
E
AS
mJ
T
T
= 25 _C
= 70 _C
= 25 _C
= 70 _C
136
95
b, c
8.3
C
C
Maximum Power Dissipation
P
W
D
T
A
b, c
5.8
T
A
Operating Junction and Storage Temperature Range
T , T
J
–50 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
b, d
Maximum Junction-to-Ambient
R
thJA
15
18
t p 10 sec
_C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
0.85
1.1
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 _C/W.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
www.vishay.com
1
SUD50P10-43
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I = –250 mA
–100
V
D
V
V
Temperature Coefficient
DV /T
J
–105
7
DS
DS
I
D
= –250 mA
mV/_C
Temperature Coefficient
DV
/T
GS(th)
GS(th) J
V
V
= V , I = –250 mA
GS D
Gate-Source Threshold Voltage
Gate-Source Leakage
V
–2
–3
–4
"100
–1
V
DS
DS
DS
GS(th)
I
= 0 V, V = "20 V
nA
GSS
GS
V
= –100 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –100 V, V = 0 V, T = 55 _C
–10
GS
J
a
On-State Drain Current
I
–35
A
V
DS
w 5 V, V = –10 V
D(on)
GS
a
Drain-Source On-State Resistance
r
0.036
30
0.043
W
V
= –10 V, I = –9.4 A
D
DS(on)
GS
a
Forward Transconductance
g
fs
V
= –15 V, I = –9.4 A
S
DS
D
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
C
5230
230
165
105
21
iss
C
oss
V
= –50 V, V = 0 V, f = 1 MHz
pF
DS
GS
C
rss
Q
160
g
Q
Q
V
= –50 V, V = –10 V, I = –9.4 A
nC
gs
gd
DS
GS
D
29
R
f = 1 MHz
4.1
30
W
g
Turn-On Delay Time
Rise Time
t
50
175
120
90
d(on)
t
115
80
r
V
DD
= –50 V, R = 6.4 W
L
ns
I
^ –7.8 A, V
= –10 V, R = 1 W
GEN g
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
60
f
Drain-Source Body Diode Characteristics
T
= 25 _C
Continuous Source-Drain Diode Current
I
–50
–50
–1.2
90
C
S
A
a
Pulse Diode Forward Current
I
SM
I
S
= –7.8 A
Body Diode Voltage
V
SD
–0.8
60
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
rr
ns
nC
Q
180
48
270
rr
I
F
= –7.8 A, di/dt = 100 A/ms, T = 25 _C
J
t
t
a
ns
12
b
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
www.vishay.com
2
SUD50P10-43
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
35
20
16
12
8
V
GS
= 10 thru 6 V
30
25
20
15
10
5
5 V
T
A
= 125 _C
4 V
4
25 _C
–55 _C
0
0
0.0
0.4
0.8
1.2
1.6
2.0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.038
0.037
7000
6000
5000
4000
3000
2000
1000
0
V
= 10 V
GS
C
iss
0.036
0.035
C
oss
C
rss
0
5
10
15
20
25
30
35
0
20
40
60
80
100
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.3
2.0
1.7
1.4
1.1
0.8
0.5
I
D
= 9.4 A
I = 9.4 A
D
V
= 50 V
DS
6
V
GS
= 10 V, 6 V
V
DS
= 80 V
4
2
0
0
20
Q
40
60
80
100
120
–50 –25
0
25
50
75 100 125 150 175
– Total Gate Charge (nC)
T – Junction Temperature (_C)
g
J
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
www.vishay.com
3
SUD50P10-43
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.08
0.07
0.06
0.05
0.04
0.03
0.02
40
T
A
= 125 _C
T
J
= 150 _C
10
T
A
= 25 _C
T
= 25 _C
J
1
0.00
4
5
6
7
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
3.4
3.1
2.8
2.5
2.2
1.9
1.6
35
30
I
D
= 250 mA
25
20
15
10
5
0
–50 –25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
1000
T
J
– Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Ambient
100
*Limited by r
10
100 ms
DS(on)
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
dc
T
= 25 _C
A
0.01
Single Pulse
0.001
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
*V u minimum V at which r
is specified
GS
GS
DS(on)
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
www.vishay.com
4
SUD50P10-43
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
Power De-Rating
50
140
120
100
80
40
30
20
10
0
60
40
20
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
T
C
– Case Temperature (_C)
Single Pulse Avalanche Capability
100
10
L @ I
A
T
+
A
BV * V
DD
1
0.000001
0.00001
0.0001
0.001
0.01
T
A
– Time In Avalanche (sec)
*The power dissipation P is based on T
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
= 175 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
D
J(max)
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
www.vishay.com
5
SUD50P10-43
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65 _C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–2
–1
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73445.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
www.vishay.com
6
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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