SUM110P04-04L [VISHAY]
P-Channel 40-V (D-S) 175-LC MOSFET; P通道40 -V （D -S ） 175 -LC MOSFET
| 型号： | SUM110P04-04L |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 40-V (D-S) 175-LC MOSFET |
| 文件： | 总5页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110P04-04L
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New Package with Low Thermal Resistance
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)d
0.0042 @ V = −10 V
−110
−110
GS
−40
D Automotive
0.0062 @ V = −4.5
V
GS
− 12-V Boardnet
− High-Side Switches
− Motor Drives
S
TO-263
G
G
D S
Top View
D
Ordering Information: SUM110P04-04L
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−40
"20
−110
−110
−240
−75
DS
GS
V
V
T
= 25_C
= 125_C
C
d
Continuous Drain Current
(T = 175_C)
J
I
D
T
C
A
Pulsed Drain Current
I
DM
Avalanche Current
I
AS
L = 0.1 mH
a
Single Pulse Avalanche Energy
E
AS
281
mJ
c
T
= 25_C
= 25_C
375
C
Power Dissipation
P
D
W
b
T
A
3.75
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
b
Junction-to-Ambient PCB Mount
R
thJA
R
thJC
40
C/W
Junction-to-Case
0.4
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
1
SUM110P04-04L
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = −250 mA
−40
−1
(BR)DSS
GS
D
V
V
DS
= V , I = −250 mA
GS D
V
−3
GS(th)
V
DS
= 0 V, V = "20 V
GS
I
"100
−1
nA
GSS
V
= −40 V, V = 0 V
GS
DS
V
V
= −40 V, V = 0 V, T = 125_C
−50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= −40 V, V = 0 V, T = 175_C
−250
DS
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −10 V
−120
A
D(on)
GS
V
= −10 V, I = −30 A
0.0034
0.005
0.0042
0.0063
0.0076
0.0062
GS
D
V
= −10 V, I = −30 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= −10 V, I = −30 A, T = 175_C
D
J
V
GS
= −4.5 V, I = −20 A
D
a
Forward Transconductance
g
fs
V
DS
= −15 V, I = −30 A
20
S
D
Dynamicb
Input Capacitance
C
11200
1650
1200
235
45
iss
Output Capacitance
C
oss
V
= 0 V, V = −25 V, f = 1 MHz
pF
GS
DS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
350
g
c
Gate-Source Charge
Q
Q
V
= −20 V, V = −10 V, I = −110 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
65
Gate Resistance
R
g
3
W
c
Turn-On Delay Time
t
25
40
45
d(on)
c
Rise Time
t
r
30
V
DD
= −20 V, R = 0.18 W
L
ns
c
I
D
] −110 A, V = −10 V, R = 2.5 W
GEN g
Turn-Off Delay Time
t
190
110
300
165
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
−110
−240
−1.5
100
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= −85 A, V = 0 V
−1.0
65
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
−3.7
0.12
−5.6
0.28
I
F
= −85 A, di/dt = 100 A/ms
Q
mC
rr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
2
SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
240
200
175
150
125
100
75
V
= 10 thru 5 V
GS
200
160
120
80
4 V
T
= 125_C
C
50
25_C
40
25
3 V
−55_C
0
0
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
240
200
160
120
80
0.010
0.008
0.006
0.004
0.002
0.000
T
= −55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
40
0
0
15
30
45
60
75
90
0
20
40
60
80
100
120
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
14000
12000
10000
8000
6000
4000
2000
0
20
16
12
8
C
iss
V
D
= 20 V
DS
I
= 110 A
C
oss
4
C
rss
0
0
5
10
15
20
25
30
35
40
0
50 100 150 200 250 300 350 400 450
− Total Gate Charge (nC)
V
− Drain-to-Source Voltage (V)
Q
g
DS
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
3
SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
V
D
= 10 V
GS
I
= 30 A
1.7
1.4
1.1
0.8
0.5
T = 25_C
J
T = 150_C
J
10
1
−50 −25
0
25
50
75 100 125 150 175
0.0
0.3
0.6
0.9
1.2
T
− Junction Temperature (_C)
V
SD
− Source-to-Drain Voltage (V)
J
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
48
46
44
42
40
38
I
D
= 250 mA
100
10
1
I
AV
(A) @ T = 25_C
A
I
AV
(A) @ T = 150_C
A
0.1
−50 −25
0
25
50
75 100 125 150 175
0.0001
0.001
0.01
0.1
(Sec)
1
10
t
T
− Junction Temperature (_C)
in
J
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
4
SUM110P04-04L
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
300
250
200
150
100
50
Limited by r
DS(on)
10 ms
100 ms
100
10
1 ms
Limited
by Package
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
− Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
0.05
0.02
Single Pulse
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 62.5_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
4. Surface Mounted
0.01
−3
−2
−4
10
10
1
10
−1
10
Square Wave Pulse Duration (sec)
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
5
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