SUM23N15-73-E3 [VISHAY]
Trans MOSFET N-CH 150V 23A 3-Pin(2+Tab) TO-263;
| 型号： | SUM23N15-73-E3 |
| 厂家： | 
VISHAY |
| 描述： | Trans MOSFET N-CH 150V 23A 3-Pin(2+Tab) TO-263 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM23N15-73
Vishay Siliconix
N-Channel 150 V (D-S) 175 °C MOSFET
FEATURES
TrenchFET® Power MOSFETS
PRODUCT SUMMARY
•
•
•
•
•
VDS (V)
RDS(on) ()
ID (A)
23
175 °C Junction Temperature
Low Thermal Resistance Package
PWM Optimized
0.073 at VGS = 10 V
0.077 at VGS = 6 V
150
22.5
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Primary Side Switch
TO-263
D
G
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUM23N15-73-E3 (Lead (Pb) free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
150
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TC = 25 °C
23
Continuous Drain Current (TJ = 175 °C)
ID
TC = 125 °C
13.4
35
A
IDM
IAR
Pulsed Drain Current
Avalanche Current
25
Repetitive Avalanche Energya
EAR
L = 0.1 mH
TC = 25 °C
31
mJ
W
100b
3.75
Maximum Power Dissipationa
PD
T
A = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
Limit
40
Unit
RthJA
°C/W
RthJC
Junction-to-Case (Drain)
1.5
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 72143
S11-2308-Rev. B, 21-Nov-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM23N15-73
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
150
2
V
Gate-Threshold Voltage
Gate-Body Leakage
4
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 120 V, VGS = 0 V
DS = 120 V, VGS = 0 V, TJ = 125 °C
DS = 120 V, VGS = 0 V, TJ = 175 °C
VDS 5 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
50
250
µA
A
ID(on)
35
10
VGS = 10 V, ID = 15 A
0.059
0.062
0.073
0.140
0.168
0.077
V
GS = 10 V, ID = 15 A, TJ = 125 °C
GS = 10 V, ID = 15 A, TJ = 175 °C
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = 6 V, ID = 10 A
Forward Transconductancea
Dynamicb
gfs
VDS = 15 V, ID = 25 A
S
Ciss
Coss
Crss
Qg
Input Capacitance
1290
160
70
22
6
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
35
Qgs
Qgd
RG
VDS = 75 V, VGS = 10 V, ID = 23 A
nC
7.5
4
td(on)
tr
td(off)
tf
10
60
30
45
15
90
43
70
V
DD = 75 V, RL = 3.26
ns
Turn-Off Delay Timec
Fall Timec
ID 23 A, VGEN = 10 V, RG = 2.5
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
ISM
Continuous Current
35
23
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 23 A, VGS = 0 V
1
100
5
1.5
150
8
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 23 A, dI/dt = 100 A/µs
0.25
0.6
µC
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72143
S11-2308-Rev. B, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM23N15-73
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
35
28
21
14
7
35
V
GS
= 10 thru 6 V
30
25
20
15
10
5
T
= 125 °C
C
5 V
25 °C
- 55 °C
4 V
0
0
0
1
2
3
4
5
6
0
3
6
9
12
15
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
50
40
30
20
10
0
0.12
T
= - 55 °C
C
25 °C
0.09
0.06
0.03
0.00
V
= 6 V
GS
125 °C
V
GS
= 10 V
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2000
1600
1200
800
400
0
20
16
12
8
V
D
= 75 V
DS
= 23 A
I
C
iss
4
C
rss
C
oss
0
0
30
V
60
90
120
150
0
8
16
24
32
40
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
DS
g
Capacitance
Gate Charge
Document Number: 72143
S11-2308-Rev. B, 21-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM23N15-73
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
2.7
V
D
= 10 V
GS
= 15 A
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
I
T = 150 °C
J
T = 25 °C
J
10
1
0
0.3
0.6
0.9
1.2
1.5
- 50 - 25
0
25
50
75 100 125 150 175
V
SD
- Source-to-Drain Voltage (V)
T
- Junction Temperature (°C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
190
180
170
160
150
140
I
D
= 1.0 mA
- 50 - 25
0
25
50
75 100 125 150 175
T
- Junction Temperature (°C)
J
Drain Source Breakdown
vs. Junction Temperature
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Document Number: 72143
S11-2308-Rev. B, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM23N15-73
Vishay Siliconix
THERMAL RATINGS
100
10
25
20
15
10
5
Limited
by R
*
DS(on)
10 µs
100 µs
1 ms
10 ms
1
100 ms
T
= 25 °C
C
DC
Single Pulse
0.1
0
0.1
1
10
100
1000
0
25
50
75
100
125
150
175
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
T
- Ambient Temperature (°C)
C
Safe Operating Area
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
-3
0.01
-4
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72143.
Document Number: 72143
S11-2308-Rev. B, 21-Nov-11
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5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
b
c
Detail “A”
E2
M
M
A
0.010
PL
2
INCHES
MIN.
MILLIMETERS
MIN.
DIM.
A
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
-
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
-
0° - 5°
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DETAIL A (ROTATED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
SECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
-
0.002
-
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
Revison: 30-Sep-13
Document Number: 71198
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
Document Number: 91000
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