SUM90N10-8M2P-E3 [VISHAY]
N-Channel 100-V (D-S) MOSFET; N沟道100 -V （D -S ）的MOSFET
| 型号： | SUM90N10-8M2P-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 100-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM90N10-8m2P
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFETS
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
175 °C Junction Temperature
100 % Rg and UIS Tested
90d
0.0082 at VGS = 10 V
100
97
RoHS
COMPLIANT
APPLICATIONS
•
Power Supply
- Secondary Synchronous Rectification
• Industrial
• Primary Switch
D
TO-263
G
G
D S
Top View
S
N-Channel MOSFET
Ordering Information: SUM90N10-8m2P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
100
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
90d
TC = 25 °C
TC = 70 °C
Continuous Drain Current (TJ = 175 °C)
ID
90d
240
60
A
IDM
IAS
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
EAS
L = 0.1 mH
TC = 25 °C
180
mJ
W
300b
3.75
Maximum Power Dissipationa
PD
T
A = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
Limit
40
Unit
RthJA
°C/W
RthJC
Junction-to-Case (Drain)
0.5
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74643
S-71690-Rev. A, 13-Aug-07
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1
SUM90N10-8m2P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Typ
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
100
2.5
V
Gate Threshold Voltage
Gate-Body Leakage
4.5
250
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 100 V, VGS = 0 V
DS = 100 V, VGS = 0 V, TJ = 125 °C
DS = 100 V, VGS = 0 V, TJ = 150 °C
VDS ≥ 10 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
50
µA
250
On-State Drain Currenta
ID(on)
rDS(on)
gfs
70
A
Ω
S
VGS = 10 V, ID = 20 A
0.0067
0.0127
62
0.0082
0.0170
Drain-Source On-State Resistancea
V
GS = 10 V, ID = 20 A, TJ = 125 °C
VDS = 15 V, ID = 20 A
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
6290
535
182
97
VGS = 0 V, VDS = 50 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
150
Qgs
Qgd
Rg
VDS = 50 V, VGS = 10 V, ID = 85 A
f = 1 MHz
32
nC
25
1.4
23
2.8
35
26
52
18
Ω
td(on)
tr
td(off)
tf
17
V
DD = 50 V, RL = 0.588 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω
34
9
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
ISM
Continuous Current
85
240
1.5
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 30 A, VGS = 0 V
0.85
61
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
100
4.5
IRM(REC)
Qrr
IF = 75 A, di/dt = 100 A/µs
3.0
91
130
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74643
S-71690-Rev. A, 13-Aug-07
SUM90N10-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
180
150
120
90
V
GS
= 10 thru 7 V
100
80
60
40
20
0
T
= - 55 °C
C
T
= 25 °C
C
6 V
T
= 125 °C
C
60
30
5 V
0
0
0
0
1
2
3
4
5
0
12
24
36
48
60
V
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
DS
D
Output Characteristics
Transconductance
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
I
= 20 A
D
T
= 125 °C
= 25 °C
C
T
= 150 °C
= 25 °C
A
T
C
T
A
T
= - 55 °C
C
4.0
5.2
6.4
7.6
8.8
10.0
2
4
6
8
10
V
- Gate-to-Source Voltage (V)
GS
V
- Gate-to-Source Voltage (V)
GS
On-resistance vs. Gate-to-Source Voltage
Transfer Characteristics
0.0073
0.0071
0.0069
0.0067
0.0065
0.0063
8000
C
iss
6400
4800
3200
1600
0
V
GS
= 10 V
C
oss
C
rss
20
40
60
80
100
0
20
40
60
80
100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 74643
S-71690-Rev. A, 13-Aug-07
www.vishay.com
3
SUM90N10-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
2.0
1.5
1.0
0.5
0.7
I
D
= 20 A
0.2
- 0.3
- 0.8
- 1.3
- 1.8
- 2.3
V
GS
= 10 V
I
D
= 5 mA
I
D
= 250 µA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
T
- Temperature (°C)
J
T
- Junction Temperature (°C)
J
Threshold Voltage
On-Resistance vs. Junction Temperature
130
124
118
112
106
100
10
8
I
D
= 85 A
I
D
= 1 mA
V
= 50 V
DS
V
= 30 V
DS
V
DS
= 70 V
6
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
22
44
66
88
110
T
- Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
Drain Source Breakdown vs. Junction Temperature
140
Gate Charge
100
10
1
T
= 150 °C
J
112
84
56
28
0
Package Limited
T
= 25 °C
J
0.1
0.01
0.001
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
T
- Case Temperature (°C)
C
Maximum Drain Current vs. Case Temperature
Source-Drain Diode Forward Voltage
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Document Number: 74643
S-71690-Rev. A, 13-Aug-07
SUM90N10-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1000
100
10
*Limited by r
DS(on)
100 µs
T = 25 °C
J
T = 150 °C
J
10
1 ms
10 ms
100 ms
DC
1
T
= 25 °C
C
Single Pulse
1
10
0.1
0.1
-5
-4
-3
-2
-1
10
10
10
(sec)
10
1
1
10
100
t
V
DS
- Drain-to-Source Voltage (V)
AV
*V
GS
minimum V at which r
is specified
Single Pulse Avalanche Current Capability vs. Time
GS
DS(on)
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74643.
Document Number: 74643
S-71690-Rev. A, 13-Aug-07
www.vishay.com
5
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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