TCST1202 [VISHAY]
Transmissive Optical Sensor with Phototransistor Output; 透射光学传感器，具有光电晶体管输出
| 型号： | TCST1202 |
| 厂家： | 
VISHAY |
| 描述： | Transmissive Optical Sensor with Phototransistor Output |
| 文件： | 总9页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCST110. up to TCST230.
Vishay Telefunken
Transmissive Optical Sensor with Phototransistor
Output
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.
B)
Applications
A)
Contactless optoelectronic switch, control and
counter
15136
Features
95 10796
Compact construction
No setting efforts
+
D
+
Polycarbonate case protected against
ambient light
E
2 case variations
3 different apertures
7.6
0.3”
CTR selected in groups
(regarding fourth number of type designation)
Top view
Order Instruction
Ordering Code
Resolution (mm) / Aperture (mm)
Remarks
No mounting flags
With two mounting flags
No mounting flags
With two mounting flags
No mounting flags
A)
TCST1103
0.6
0.4
0.2
/
1.0
B)
A)
B)
A)
B)
TCST2103
TCST1202
TCST2202
TCST1300
TCST2300
/
0.5
/
0.25
With two mounting flags
Document Number 83764
Rev. A5, 08–Jun–99
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1 (9)
TCST110. up to TCST230.
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Test Conditions
Symbol
Value
6
Unit
V
V
R
Forward current
I
60
3
100
100
mA
A
mW
C
F
Forward surge current
Power dissipation
Junction temperature
t ≤ 10 s
I
p
FSM
T
≤ 25 C
P
T
amb
V
j
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Test Conditions
Symbol
Value
70
7
100
200
150
100
Unit
V
V
mA
mA
mW
C
V
V
CEO
ECO
I
C
t /T = 0.5, t ≤ 10 ms
I
p
p
CM
T
amb
≤ 25 C
P
V
T
j
Junction temperature
Coupler
Parameter
Test Conditions
≤ 25 C
Symbol
P
tot
Value
250
–55 to +85
–55 to +100
260
Unit
mW
C
C
C
Total power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
T
amb
T
amb
T
stg
2 mm from case, t ≤ 5 s
T
sd
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2 (9)
Document Number 83764
Rev. A5, 08–Jun–99
TCST110. up to TCST230.
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
I = 60 mA
V = 0, f = 1 MHz
R
Symbol
Min.
Typ.
1.25
50
Max.
1.6
Unit
V
pF
V
F
F
C
j
Output (Detector)
Parameter
Collector emitter voltage I = 1 mA
Emitter collector voltage
Collector dark current
Test Conditions
Symbol
Min.
70
7
Typ.
Max.
100
Unit
V
V
V
V
C
CEO
ECO
CEO
I = 10 A
E
V
CE
= 25 V, I = 0, E = 0
I
nA
F
Coupler
Parameter
Current transfer ratio
Test Conditions
= 5 V,
I = 20 mA
F
Type
TCST1103,
TCST2103
Symbol
CTR
Min.
10
Typ.
20
Max.
Unit
%
V
CE
TCST1202,
TCST2202
TCST1300,
TCST2300
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
CTR
CTR
5
1.25
2
10
2.5
4
%
%
Collector current
V
CE
= 5 V,
I
C
I
C
I
C
mA
mA
mA
V
I = 20 mA
F
1
2
0.25
0.5
Collector emitter
saturation voltage
I = 20 mA,
I = 1 mA
C
V
V
V
0.4
0.4
0.4
F
CEsat
CEsat
I = 20 mA,
V
F
I = 0.5 mA
C
I = 20 mA,
V
F
CEsat
I = 0.1 mA
C
Resolution, path of the
shutter crossing the
radiant sensitive zone
I
= 10 to 90% TCST1103,
TCST2103
s
0.6
0.4
0.2
mm
mm
mm
Crel
TCST1202,
TCST2202
TCST1300,
TCST2300
s
s
Document Number 83764
Rev. A5, 08–Jun–99
www.vishay.com
3 (9)
TCST110. up to TCST230.
Vishay Telefunken
Switching Characteristics
Parameter
Turn-on time
Turn-off time
Test Conditions
Symbol
Typ.
10.0
8.0
Unit
s
s
V = 5 V, I = 2 mA, R = 100 (see figure 1)
t
on
t
off
S
C
L
+ 5 V
96 11698
I
F
I
F
I
F
0
adjusted through
input amplitude
I
= 2 mA;
C
R
= 50
0
G
t
t
p
t
p
= 0.01
T
t = 50
p
s
I
C
100%
90%
Channel I
Channel II
Oscilloscope
L
R
1 M
C
20 pF
L
50
100
10%
0
95 10897
t
t
r
Figure 1. Test circuit, saturated operation
t
s
t
f
t
d
t
on
t
off
t
t
t
t
pulse duration
delay time
rise time
t
t
t
storage time
fall time
turn-off time
p
s
d
f
(= t + t )
r
off
s
f
(= t + t )
turn-on time
on
d
r
Figure 2. Switching times
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4 (9)
Document Number 83764
Rev. A5, 08–Jun–99
TCST110. up to TCST230.
Vishay Telefunken
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
400
300
200
100
0
10000
1000
100
10
V
I =0
F
=25V
CE
Coupled device
Phototransistor
IR-diode
1
150
100
0
30
60
90
120
0
25
T – Ambient Temperature ( °C )
amb
50
75
95 11088
T
amb
– Ambient Temperature ( °C )
95 11090
Figure 3. Total Power Dissipation vs.
Ambient Temperature
Figure 6. Collector Dark Current vs. Ambient Temperature
1000.0
100.0
10.0
1.0
10.000
V
=5V
CE
1.000
0.100
0.010
0.001
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V – Forward Voltage ( V )
0.1
1.0
10.0
100.0
96 11862
96 12066
I – Forward Current ( mA )
F
F
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Collector Current vs. Forward Current
2.0
10.00
I =50mA
F
V
=5V
CE
I =20mA
F
20mA
10mA
1.5
1.0
0.5
0
1.00
0.10
0.01
5mA
2mA
1mA
100
0.1
1.0
10.0
100.0
–25
0
25
50
75
96 12067
V
CE
– Collector Emitter Voltage ( V )
95 11089
T
amb
– Ambient Temperature ( °C )
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 8. Collector Current vs. Collector Emitter Voltage
Document Number 83764
Rev. A5, 08–Jun–99
www.vishay.com
5 (9)
TCST110. up to TCST230.
Vishay Telefunken
110
100
90
80
70
60
50
40
30
20
10
0
100.0
0
V
=5V
CE
A=1mm
10.0
1.0
s
0.1
–0.5–0.4–0.3–0.2–0.1–0.0 0.1 0.2 0.3 0.4 0.5
s – Displacement ( mm )
0.1
1.0
10.0
100.0
96 12005
96 12068
I – Forward Current ( mA )
F
Figure 11. Relative Collector Current vs. Displacement
Figure 9. Current Transfer Ratio vs. Forward Current
110
20
0
100
90
80
70
60
50
40
30
20
10
0
A=0.5mm
s
Non Saturated
Operation
V =5V
15
10
5
S
R =100
L
t
t
on
off
0
–0.5–0.4–0.3–0.2–0.1–0.0 0.1 0.2 0.3 0.4 0.5
s – Displacement ( mm )
10
0
2
4
6
8
96 12006
95 11086
I – Collector Current ( mA )
C
Figure 12. Relative Collector Current vs. Displacement
Figure 10. Turn on / off Time vs. Collector Current
110
0
100
90
80
70
60
50
40
30
20
10
0
A=0.25mm
s
–0.5–0.4–0.3–0.2–0.1–0.0 0.1 0.2 0.3 0.4 0.5
s – Displacement ( mm )
96 12007
Figure 13. Relative Collector Current vs. Displacement
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6 (9)
Document Number 83764
Rev. A5, 08–Jun–99
TCST110. up to TCST230.
Vishay Telefunken
Dimensions of TCST1.0. in mm
96 12094
Document Number 83764
Rev. A5, 08–Jun–99
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7 (9)
TCST110. up to TCST230.
Vishay Telefunken
Dimensions of TCST2.0. in mm
96 12095
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8 (9)
Document Number 83764
Rev. A5, 08–Jun–99
TCST110. up to TCST230.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83764
Rev. A5, 08–Jun–99
www.vishay.com
9 (9)
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