TEMD5000 [VISHAY]
Silicon PIN Photodiode; 硅PIN光电二极管
| 型号： | TEMD5000 |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode |
| 文件： | 总5页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TEMD5000
Vishay Telefunken
Silicon PIN Photodiode
Description
TEMD5000 is a high speed and high sensitive PIN
photodiode in a miniature flat plastic package. Its top
view construction makes it ideal as a low cost replace-
ment of TO–5 devices in many applications.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation. The large active area
combined with a flat case gives a high sensitivity at a
wide viewing angle.
Features
2
12775
Large radiant sensitive area (A=7.5 mm )
Wide angle of half sensitivity ϕ = ± 65
High photo sensitivity
Fast response times
Small junction capacitance
Suitable for visible and near infrared radiation
Applications
High speed photo detector
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Test Conditions
25 C
Symbol
Value
60
215
Unit
V
mW
C
V
P
R
T
amb
V
T
100
j
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
T
T
–55...+100
260
C
C
K/W
stg
t
3 s
sd
R
thJA
350
Document Number 81552
Rev. 3, 25-May-00
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1 (5)
TEMD5000
Vishay Telefunken
Basic Characteristics
T
amb
= 25 C
Parameter
Test Conditions
I = 100 A, E = 0
Symbol Min
60
Typ
Max
30
Unit
V
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
V
(BR)
R
V = 10 V, E = 0
I
ro
2
70
25
350
–2.6
70
50
0.1
75
nA
pF
pF
mV
mV/K
A
A
%/K
A
R
V = 0 V, f = 1 MHz, E = 0
C
C
R
D
V = 3 V, f = 1 MHz, E = 0
40
R
D
2
Open Circuit Voltage
Temp. Coefficient of V
Short Circuit Current
E = 1 mW/cm , = 950 nm
V
e
o
2
E = 1 mW/cm , = 950 nm
e
TK
Vo
o
E = 1 klx
I
I
A
k
2
E = 1 mW/cm , = 950 nm
e
k
2
Temp. Coefficient of I
Reverse Light Current
E = 1 mW/cm , = 950 nm
e
TK
Ik
k
E = 1 klx, V = 5 V
I
ra
I
ra
A
R
2
E = 1 mW/cm ,
e
40
55
A
= 950 nm, V = 5 V
R
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
ϕ
±65
900
deg
nm
nm
W/√ Hz
ns
p
600...1050
0.5
–14
V = 10 V, = 950 nm
NEP
t
r
4x10
R
V = 10 V, R = 1 k ,
100
R
L
= 820 nm
Fall Time
V = 10 V, R = 1 k ,
t
f
100
ns
R
L
= 820 nm
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1000
100
10
1.4
1.2
1.0
0.8
0.6
V =5V
=950nm
R
V =10V
R
1
100
100
20
40
60
80
0
20
40
60
80
94 8403
T
amb
– Ambient Temperature ( °C )
94 8416
T
amb
– Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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Document Number 81552
Rev. 3, 25-May-00
TEMD5000
Vishay Telefunken
1000
100
10
80
60
40
20
0
E=0
f=1MHz
V =5V
=950nm
R
1
0.1
10
100
0.01
0.1
1
0.1
1
10
V – Reverse Voltage ( V )
R
2
12787
E – Irradiance ( mW/cm )
94 8407
e
Figure 3. Reverse Light Current vs. Irradiance
Figure 6. Diode Capacitance vs. Reverse Voltage
1000
1.0
0.8
0.6
0.4
0.2
100
10
V =5V
R
1
0.1
10
0
1
2
3
4
1150
10
10
10
350
550
750
950
94 8418
E
A
– Illuminance ( lx )
94 8420
– Wavelength ( nm )
Figure 4. Reverse Light Current vs. Illuminance
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0°
10
°
20
°
100
30°
2
1mW/cm
2
0.5mW/cm
40°
1.0
0.9
2
0.2mW/cm
10
50°
60°
2
0.1mW/cm
0.8
0.7
2
0.05mW/cm
70°
80°
=950nm
1
100
0.6
0.1
1
10
0.6
0.4
0.2
0
0.2
0.4
12788
V
– Reverse Voltage ( V )
94 8406
R
Figure 5. Reverse Light Current vs. Reverse Voltage
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81552
Rev. 3, 25-May-00
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
TEMD5000
Vishay Telefunken
Dimensions in mm
12774
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Document Number 81552
Rev. 3, 25-May-00
TEMD5000
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81552
Rev. 3, 25-May-00
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