TFBS4710-TT3 [VISHAY]
Interface Circuit, 8.96 X 3.3 MM, 2.74 MM HEIGHT, ROHS COMPLIANT, MODULE, 6 PIN;
| 型号： | TFBS4710-TT3 |
| 厂家： | 
VISHAY |
| 描述： | Interface Circuit, 8.96 X 3.3 MM, 2.74 MM HEIGHT, ROHS COMPLIANT, MODULE, 6 PIN |
| 文件： | 总11页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TFBS4710
Vishay Semiconductors
Serial Infrared Transceiver SIR, 115.2 kbit/s,
2.7 V to 5.5 V Operation
Description
The TFBS4710 is a low profile, full range Infrared
Data Transceiver module. It supports IrDA data rates
up to 115.2 kbit/s (SIR). The transceiver module con-
sists of a photo PIN photodiode, an infrared emitter
(IRED), and a low-power CMOS control IC to provide
a total front-end solution in a single package.
The device has a link distance of 1 meter. The RXD
pulse width is independent of the duration of TXD
pulse and always stays at a fixed width thus making
the device optimum for all standard SIR Encoder/
Decoder and interfaces. The Shut Down (SD) feature
cuts current consumption to typically 10 nA.
18071
Features
• Compliant with the latest IrDA physical
layer
• Fixed RXD output pulse width (2 µs typical)
• Meets IrFM Fast Connection requirements
specification (9.6 kbit/s to 115.2 kbit/s)
• Small package:
• Split power supply, an independant, unregulated
supply for IRED Anode and a well regulated
e4
H 2.74 mm x D 3.33 mm x L 8.96 mm
supply for V
CC
• Typical Link distance 1 m
• Drop in replacement for IRM5000D/ IRMT5000
• Battery & Power Management Features:
> Idle Current - 75 µA Typical
• Directly Interfaces with Various Super I/O and
Controller Devices and Encoder/ Decoder such as
TOIM4232
• Lead (Pb)-free device
> Shutdown Current - 10 nA Typical
> Operates from 2.4 V - 5.0 V within specification
over full temperature range from - 25 °C to + 85 °C
• Qualified for lead (Pb)-free and Sn/Pb processing
(MSL4)
• Device in accordance to RoHS 2002/95/EC and
WEEE 202/96EC
• Remote Control - transmit distance up to 8 meters
• Tri-State Receiver Output, floating in shutdown
with a weak pull-up
Applications
• Ideal for Battery Operated Devices
• PDAs
• Data Loggers
• External Infrared Adapters (Dongles)
• Diagnostics Systems
• Mobile Phones
• Electronic Wallet (IrFM)
• Notebook Computers
• Digital Still and Video Cameras
• Medical and Industrial Data Collection Devices
• Kiosks, POS, Point and Pay Devices
• GPS
• Printers, Fax Machines, Photocopiers,
Screen Projectors
• Access Control
• Field Programming Devices
Parts Table
Part
Description
Oriented in carrier tape for side view surface mounting
Oriented in carrier tape for top view surface mounting
Qty / Reel
TFBS4710-TR1
TFBS4710-TT1
1000 pcs
1000 pcs
www.vishay.com
142
Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Functional Block Diagram
V
CC1
Push-Pull
Driver
RXD
Comparator
Amplifier
V
CC2
Logic
Controlled Driver
SD
&
TXD
Control
RED C
GND
18282
Pinout
Definitions:
TFBS4710
weight 100 mg
In the Vishay transceiver data sheets the following nomenclature is
used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared
standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2,
adding the SIR Low Power Standard. IrPhy 1.3 extended the Low
Power Option to MIR and FIR and VFIR was added with IrPhy 1.4.
A new version of the standard in any case obsoletes the former ver-
sion.
1
2
3
4
5
6
18511
With introducing the updated versions the old versions are obso-
lete. Therefore the only valid IrDA standard is the actual version
IrPhy 1.4 (in Oct. 2002).
Pin Description
Pin Number Function
Description
I/O
I
Active
HIGH
1
IRED
IRED Anode is connected to a power supply. The LED current can be decreased
by adding a resistor in series between the power supply and IRED Anode. A
separate unregulated power supply can be used at this pin.
Anode
2
TXD
This Input is used to turn on IRED transmitter when SD is low. An on-chip
protection circuit disables the LED driver if the TXD pin is asserted for longer than
80 µs
3
4
RXD
SD
Received Data Output, normally stays high but goes low for a fixed duration
during received pulses. It is capable of driving a standard CMOS or TTL load.
O
I
LOW
Shutdown. Setting this pin active for more than 1.5 ms switches the device into
shutdown mode
HIGH
5
6
VCC
Regulated Supply Voltage
Ground
GND
Document Number 82612
Rev. 1.5, 03-Jul-06
www.vishay.com
143
TFBS4710
Vishay Semiconductors
Absolute Maximum Ratings
Reference Point Ground, Pin 6 unless otherwise noted.
Parameter
Test Conditions
Symbol
VCC
Min
Typ.
Max
Unit
V
Supply voltage range, all states
- 0.3
+ 6.0
Input current
For all Pins except IRED Anode
Pin
ICC
10.0
mA
Output Sink Current, RXD
25.0
60
mA
mA
Average output current, pin 1
20 % duty cycle
IIRED (DC)
IIRED (RP)
VIREDA
Repetitive pulsed output current < 90 µs, ton < 20 %
IRED anode voltage, pin 1
300
+ 6.0
+ 6.0
mA
V
- 0.5
- 0.5
Voltage at all inputs and outputs Vin > VCC is allowed
VIN
V
Power dissipation
See derating curve
200
125
+ 85
mW
°C
Junction temperature
Ambient temperature range
(operating)
Tamb
Tstg
- 30
- 40
°C
Storage temperature range
Soldering temperature
+ 100
260
°C
°C
See Recommended Solder
Profile
Electrical Characteristics
Transceiver
Tamb = 25 °C, VCC = VIREDA = 2.4 V to 5.5 V unless otherwise noted.
Parameter
Test Conditions
Symbol
VCC
Min
2.4
Typ.
90
Max
5.5
Unit
V
Supply voltage range, all states
SD = Low, Ee = 1 klx*),
Idle supply current at VCC1
(receive mode, no signal)
ICC1
130
µA
Tamb = - 25 °C to + 85 °C,
VCC1 = VCC2 = 2.7 V to 5.5 V
SD = Low, Ee = 1 klx*),
Tamb = 25 °C,
ICC1
75
µA
VCC1 = VCC2 = 2.7 V to 5.5 V
Receive current
VCC = 2.7 V
ICC
ISD
280
µA
µA
µA
°C
V
Shutdown current
SD = High, T = 25 °C, Ee = 0 klx
SD = High, T = 85 °C
2
3
ISD
Operating temperature range
Output voltage low, RXD
Output voltage high, RXD
TA
- 25
- 0.5
+ 85
IOL = 1 mA
VOL
VOH
VOH
RRXD
VIL
0.15 x VCC
VCC + 0.5
VCC + 0.5
600
I
I
OH = - 500 µA
OH = - 250 µA
0.8 x VCC
0.9 x VCC
400
V
V
RXD to VCC impedance
500
kΩ
V
Input voltage low: TXD, SD
Input voltage high: TXD, SD
- 0.5
0.5
CMOS level (0.5 x VCC typ,
threshold level)
VIH
VCC - 0.5
6.0
V
Input leakage current (TXD, SD) Vin = 0.9 x VCC
IICH
- 2
- 1
+ 2
µA
µA
Controlled pull down current
SD, TXD = "0" or "1",
IIRTx
+ 150
0 < Vin < 0.15 VCC
SD, TXD = "0" or "1"
Vin > 0.7 VCC
IIRTx
CIN
0
1
5
µA
pF
Input capacitance
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144
Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted
Parameter
Test Conditions
Symbol
Ee
Min
Typ.
Max
Unit
mW/m2
(µW/cm2)
Minimum detection threshold
irradiance, SIR mode
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,
α = 0°, 15°
10
(1.0)
25
(2.5)
40
(4)
kW/m2
(mW/cm2)
mW/m2
(µW/cm2)
ns
Maximum detection threshold
irradiance
λ = 850 nm - 900 nm
Ee
Ee
5
(500)
Maximum no detection
threshold irradiance
4
(0.4)
Rise time of output signal
Fall time of output signal
RXD pulse width
10 % to 90 %, CL = 15 pF
90 % to 10 %, CL = 15 pF
Input pulse width > 1.2 µs
tr(RXD)
tf(RXD)
tPW
10
10
100
100
3.0
ns
µs
ns
1.65
2.0
Input Irradiance = 100 mW/m2,
Leading edge jitter
250
≤ 115.2 kbit/s
Standby /Shutdown delay
Receiver startup time
Latency
After shutdown active
Power-on delay
150
150
µs
µs
tL
Transmitter
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted.
Parameter
Test Conditions
Symbol
Min
Typ.
300
Max
350
Unit
mA
IRED operating current
ID
Vf
250
1.4
- 1
IRED forward voltage
IRED leakage current
Output radiant intensity
Ir = 300 mA
1.8
1.9
1
V
TXD = 0 V, 0 < VCC < 5.5 V
IIRED
Ie
µA
α = 0°, 15°, TXD = High,
40
70
350
mW/sr
SD = Low
VCC = 5.0 V, α = 0°, 15°,
Ie
0.04
mW/sr
TXD = High or SD = High (Receiver
is inactive as long as SD = High)
Output radiant intensity, angle of
half intensity
α
24
45
°
Peak-emission wavelength
λp
880
900
nm
Spectral bandwidth
Optical rise time
Δλ
nm
ns
tropt
10
10
100
100
1.8
Optical fall time
tfopt
topt
ns
µs
Optical output pulse duration
Input pulse width 1.63 µs,
115.2 kbit/s
1.46
1.63
Input pulse width tTXD < 20 µs
topt
topt
tTXD
t + 0.15
50
µs
µs
%
Input pulse width tTXD ≥ 20 µs
Optical overshoot
25
Document Number 82612
Rev. 1.5, 03-Jul-06
www.vishay.com
145
TFBS4710
Vishay Semiconductors
Recommended Solder Profiles
Solder Profile for Sn/Pb soldering
Manual Soldering
Manual soldering is the standard method for lab use.
However, for a production process it cannot be rec-
ommended because the risk of damage is highly
dependent on the experience of the operator. Never-
theless, we added a chapter to the above mentioned
application note, describing manual soldering and
desoldering.
260
10 s max. at 230 °C
240 °C max.
240
220
200
180
160
140
120
100
80
2...4 °C/s
160 °C max.
120 s...180 s
90 s max.
Storage
2...4 °C/s
The storage and drying processes for all VISHAY
transceivers (TFDUxxxx and TFBSxxx) are equiva-
lent to MSL4.
60
40
20
0
The data for the drying procedure is given on labels
on the packing and also in the application note
"Taping, Labeling, Storage and Packing"
(http://www.vishay.com/docs/82601/82601.pdf).
0
50
100
150
200
250
300
350
Time/s
19431
Figure 1. Recommended Solder Profile for Sn/Pb soldering
Lead (Pb)-Free, Recommended Solder Profile
280
T = 260 °C max.
peak
260
240
220
200
180
160
140
120
100
80
≥
≥
T
T
255 °C for 20 s max
217 °C for 50 s max
The TFBS4710 is a lead (Pb)-free transceiver and
qualified for lead (Pb)-free processing. For lead
(Pb)-free solder paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu,
there are two standard reflow profiles: Ramp-Soak-
Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-
Soak-Spike profile was developed primarily for reflow
ovens heated by infrared radiation. With widespread
use of forced convection reflow ovens the Ramp-To-
Spike profile is used increasingly. Shown below in fig-
ure 2 is VISHAY's recommended profiles for use with
the TFBS4710 transceivers. For more details please
refer to Application note: SMD Assembly Instruction.
20 s
90 s...120 s
50 s max.
2 °C...4 °C/s
60
2 °C...4 °C/s
40
20
0
0
50
100
150
200
250
300
350
19261
Time/s
Figure 2. Solder Profile, RSS Recommendation
Wave Soldering
For TFDUxxxx and TFBSxxxx transceiver devices
wave soldering is not recommended.
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146
Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Recommended Circuit Diagram
Table 1.
High Operating Temperature > 70 °C
Rled (Ω)
Rled (Ω)
V
VLED
(V)
Standard Power Mode
(Intensity > 40 mW/sr,
0° - 15°)
Low Power Mode
(Intensity > 3.6 mW/sr,
0° - 15°)
CC
IR Controller
Vdd
TFBS4710
IREDA (1)
Rled
2.7
3.3
5.0
3
6
50
> 50
> 60
TXD
RXD
SD
(2)
(3)
(4)
(5)
(6)
IRTX
IRRX
18
IRMODE
Vcc
R1= 47Ω
GND
I/O and Software
GND
In the description, already different I/Os are men-
tioned. Different combinations are tested and the
function verified with the special drivers available
from the I/O suppliers. In special cases refer to the I/
O manual, the Vishay application notes, or contact
directly Vishay Sales, Marketing or Application.
C4
0.1 µF
C2
C3
C1
4.7 µF
0.1µF 4.7 µF
18281
Figure 3. Recommended Application Circuit
The TFBS4710 integrates a sensitive receiver and a
built-in power driver. This combination needs a care-
ful circuit layout. The use of thin, long, resistive and
inductive wiring should be avoided. The inputs (TXD,
SD) and the output (RXD) should be directly (DC)
coupled to the I/O circuit.
The combination of resistor R1 and capacitors C1,
C2, C3 and C4 filter out any power supply noise to
provide a smooth supply voltage.
The placement of these components is critical. It is
strongly recommended to position C3 and C4 as
close as possible to the transceiver power supply
pins. A Tantalum capacitor should be used for C1 and
C3 while a ceramic capacitor should be used for C2
and C4.
Table 2.
Recommended Application Circuit Com-
ponents
Component Recommended Value
Vishay Part Number
C1, C3
C2, C4
R1
4.7 µF, 16 V
0.1 µF, Ceramic
47 Ω, 0.125 W
See Table 1
293D 475X9 016B
VJ 1206 Y 104 J XXMT
CRCW-1206-47R0-F-RT1
Rled
A current limiting resistor is not needed for normal
operation. It is strongly recommended to use the Rled
values mentioned in Table 1 below for high tempera-
ture operation. For Low Power Mode, IRED Anode
voltage of less than 5 V is recommended.
Under extreme EMI conditions as placing a RF -
transmitter antenna on top of the transceiver, it is rec-
ommended to protect all inputs by a low-pass filter, as
a minimum a 12 pF capacitor, especially at the RXD
port.
Basic RF design rules for circuit design should be fol-
lowed. Especially longer signal lines should not be
used without proper termination. For reference see
"The Art of Electronics" by Paul Horowitz, Winfield
Hill, 1989, Cambridge University Press, ISBN:
0521370957.
Document Number 82612
Rev. 1.5, 03-Jul-06
www.vishay.com
147
TFBS4710
Vishay Semiconductors
Table 3.
Truth table
Inputs
Outputs
RXD
Remark
SD
TXD
Optical input Irradiance
Transmitt
er
Operation
mW/m2
high
x
x
weakly pulled
0
Shutdown
> 1 ms
(500 Ω) to VCC1
low
high
x
x
high inactive
high inactive
Ie
0
Transmitting
high
> µs
low
Protection is active
< 4
high inactive
0
Ignoring low signals below the
IrDA defined threshold for noise
immunity
> Min. Detection Threshold Irradiance
< Max. Detection Threshold Irradiance
Response to an IrDA compliant
optical input signal
Overload conditions can cause
unexpected outputs
low
low
low (active)
undefined
0
0
> Max. Detection Threshold Irradiance
Package Dimensions
18086
Drawing-No.: 6.550-5256.01-4
Issue: 1; 24.06.03
Figure 4. Package drawing TFBS4710
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148
Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
Reel Dimensions
Drawing-No.: 9.800-5090.01-4
Issue: 1; 29.11.05
14017
Tape Width
A max.
N
W1 min.
W2 max.
W3 min.
W3 max.
mm
16
mm
330
mm
50
mm
mm
mm
mm
16.4
22.4
15.9
19.4
Document Number 82612
Rev. 1.5, 03-Jul-06
www.vishay.com
149
TFBS4710
Vishay Semiconductors
Tape Dimensions
19611
Drawing-No.: 9.700-5299.01-4
Issue: 1; 18.08.05
Figure 5. Tape drawing for TFBS4710 for side view mounting
www.vishay.com
150
Document Number 82612
Rev. 1.5, 03-Jul-06
TFBS4710
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
151
Document Number 82612
Rev. 1.5, 03-Jul-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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