TLMV3100 [VISHAY]
Bicolor SMD LED; 双色SMD LED
| 型号： | TLMV3100 |
| 厂家： | 
VISHAY |
| 描述： | Bicolor SMD LED |
| 文件： | 总7页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLMV3100
Vishay Telefunken
Bicolor SMD LED
Color
Type
Technology
Angle of Half Intensity
±
High efficiency red
Green
TLMH3100
TLMG3100
GaAsP on GaP
GaP on GaP
60
60
Description
These devices have been designed to meet the in-
creasing demand for surface mounting technology.
The package of the TLM.3100 is the P–LCC–3 (equiv-
alent to a size B tantalum capacitor).
It consists of a lead frame which is surrounded with a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and green chip. So
it is possible to choose the color in one device.
Features
SMD LED with exceptional brightness
Multicolored
94 8554
Luminous intensity categorized
Compatible with automatic placement equipment
EIA and ICE standard package
Compatible with infrared, vapor phase and wave
solder processes according to CECC
Available in 8 mm tape
Low profile package
Non-diffused lens: excellent for coupling to light
pipes and backlighting
Low power consumption
Luminous intensity ratio in one packaging unit
I
/I
2.0
Vmax Vmin
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
Document Number 83042
Rev. A1, 04-Feb-99
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1 (7)
TLMV3100
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
TLMH3100 ,TLMG3100 ,
Parameter
Test Conditions
I = 10 A
Symbol
Value
6
30
0.5
100
Unit
V
mA
A
mW
C
Reverse voltage per diode
DC forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
V
R
R
T
amb
≤ 60 C
I
F
t ≤ 10 s
I
p
FSM
T
amb
≤ 60 C
P
V
T
100
j
Operating temperature range
Storage temperature range
Soldering temperature
T
T
T
–40 to +100
–55 to +100
260
C
C
C
amb
stg
t ≤ 5 s
sd
Thermal resistance junction/ambient
mounted on PC board
(pad size > 16 mm )
R
thJA
400
K/W
2
Optical and Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
High efficiency red (TLMH3100 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per diode
Reverse current per diode
Junction capacitance per diode
Test Conditions
I = 10 mA
Type Symbol Min
Typ
6
Max
Unit
I
2.5
612
mcd
nm
nm
deg
V
F
V
d
p
I = 10 mA
625
F
I = 10 mA
635
±60
2.4
F
I = 10 mA
ϕ
F
I = 10 A
V
F
3
10
F
V = 6 V
I
R
A
pF
R
V = 0, f = 1 MHz
R
C
j
15
Green (TLMG3100 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per diode
Reverse current per diode
Junction capacitance per diode
Test Conditions
I = 10 mA
I = 10 mA
I = 10 mA
I = 10 mA
I = 10 A
Type Symbol Min
Typ
6
Max
575
Unit
mcd
nm
nm
deg
V
I
2.5
562
F
V
d
p
F
565
±60
2.4
F
ϕ
F
V
F
3
10
F
V = 6 V
I
R
A
pF
R
V = 0, f = 1 MHz
R
C
j
15
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Document Number 83042
Rev. A1, 04-Feb-99
TLMV3100
Vishay Telefunken
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
0°
10
°
20
°
125
100
75
30°
40°
1.0
0.9
50°
60°
50
25
0
0.8
0.7
70°
80°
100
0.6
0
20
40
60
80
0.6
0.4
0.2
0
0.2
0.4
95 10904
T
amb
– Ambient Temperature ( °C )
95 10319
Figure 1 Power Dissipation vs. Ambient Temperature
Figure 4 Rel. Luminous Intensity vs. Angular Displacement
60
50
40
30
20
10
0
100
High Efficiency Red
10
1
0.1
100
5
0
20
40
60
80
0
1
2
3
4
95 10905
T
amb
– Ambient Temperature ( °C )
95 9989
V – Forward Voltage ( V )
F
Figure 2 Forward Current vs. Ambient Temperature
Figure 5 Forward Current vs. Forward Voltage
10000
2.0
T
amb
60°C
High Efficiency Red
1.6
t /T=0.005
p
0.01
1000
100
10
0.02
0.05
1.2
0.2
0.5
DC
0.8
0.4
0
0.1
1
100
100
0.01
0.1
1
10
0
20
40
60
80
95 9985
t – Pulse Length ( ms )
p
95 9993
T
amb
– Ambient Temperature ( °C )
Figure 3 Forward Current vs. Pulse Length
Figure 6 Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83042
Rev. A1, 04-Feb-99
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TLMV3100
Vishay Telefunken
2.4
100
10
1
High Efficiency Red
2.0
Green
1.6
1.2
0.8
0.4
0
0.1
5
I (mA)
10
1
20
50
100 200
0.05
500
0
1
2
3
4
F
95 10321
95 9986
V – Forward Voltage ( V )
F
t /T
p
0.5
0.2 0.1
0.02
Figure 7 Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 10 Forward Current vs. Forward Voltage
10
2.0
High Efficiency Red
Green
1.6
1.2
1
0.1
0.8
0.4
0
0.01
100
100
1
10
I – Forward Current ( mA )
0
20
40
60
80
95 9995
95 10320
T
amb
– Ambient Temperature ( °C )
F
Figure 8 Relative Luminous Intensity vs. Forward Current
Figure 11 Rel. Luminous Intensity vs.
Ambient Temperature
1.2
2.4
High Efficiency Red
1.0
Green
2.0
1.6
1.2
0.8
0.4
0
0.8
0.6
0.4
0.2
0
690
590
610
630
650
670
10
20
50
100 200
500
95 10040
– Wavelength ( nm )
95 10263
I – Forward Current ( mA )
F
Figure 9 Relative Luminous Intensity vs. Wavelength
Figure 12 Specific Luminous Intensity vs. Forward Current
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Document Number 83042
Rev. A1, 04-Feb-99
TLMV3100
Vishay Telefunken
10
1
1.2
1.0
0.8
0.6
0.4
0.2
0
Green
Green
0.1
0.01
100
620
1
10
I – Forward Current ( mA )
520
540
560
580
600
95 9996
95 10038
– Wavelength ( nm )
F
Figure 13 Relative Luminous Intensity vs. Forward Current
Figure 14 Relative Luminous Intensity vs. Wavelength
Dimensions in mm
95 11317
Document Number 83042
Rev. A1, 04-Feb-99
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5 (7)
TLMV3100
Vishay Telefunken
PCB Layout in mm
95 10967
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Document Number 83042
Rev. A1, 04-Feb-99
TLMV3100
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83042
Rev. A1, 04-Feb-99
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