TSFF5410 [VISHAY]
High Speed IR Emitting Diode in 5 mm (T-1 3 /4) Package; 高速红外发光二极管在5毫米（ T- 1 3 /4），包
| 型号： | TSFF5410 |
| 厂家： | 
VISHAY |
| 描述： | High Speed IR Emitting Diode in 5 mm (T-1 3 /4) Package |
| 文件： | 总5页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSFF5410
Vishay Semiconductors
VISHAY
High Speed IR Emitting Diode in ∅ 5 mm (T-1¾) Package
Description
TSFF5410 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
94 8390
Features
• High modulation bandwidth (23 MHz)
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
Applications
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = 22°
• Peak wavelength λp = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free device
Infrared video data transmission between Camcorder
and TV set.
Free air data transmission systems with high modu-
lation frequencies or high data transmission rate
requirements.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Symbol
Value
5
Unit
V
Reverse Voltage
V
R
Forward current
I
100
200
mA
mA
A
F
Peak Forward Current
Surge Forward Current
Power Dissipation
t /T = 0.5, t = 100 µs
I
FM
p
p
t = 100 µs
I
1
p
FSM
P
250
mW
°C
V
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
T
100
j
T
- 25 to + 85
- 25 to + 85
260
°C
amb
T
°C
stg
t ≤ 5 sec, 2 mm from case
T
°C
sd
Thermal Resistance Junction/
Ambient
R
300
K/W
thJA
Document Number 81091
Rev. 1.4, 23-Jun-04
www.vishay.com
1
TSFF5410
Vishay Semiconductors
VISHAY
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Min
Typ.
1.5
Max
1.8
Unit
V
Forward Voltage
I
I
I
= 100 mA, t = 20 ms
V
V
F
F
F
p
F
F
= 1 A, t = 100 µs
2.3
3.0
V
mV/K
µA
p
Temp. Coefficient of V
Reverse Current
= 100 mA
= 5 V
TK
I
-2.1
F
VF
V
V
10
R
R
Junction capacitance
= 0 V, f = 1 MHz, E = 0
C
125
pF
R
j
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Min
40
Typ.
70
Max
200
Unit
Radiant Intensity
I
I
I
I
= 100 mA, t = 20 ms
I
I
mW/sr
F
F
F
F
p
e
e
= 1 A, t = 100 µs
700
50
mW/sr
mW
p
Radiant Power
= 100 mA, t = 20 ms
φ
e
p
Temp. Coefficient of φ
= 100 mA
TK
-0.35
%/K
e
φe
Angle of Half Intensity
Peak Wavelength
ϕ
22
deg
nm
I
I
I
I
I
I
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
λ
870
F
p
Spectral Bandwidth
∆λ
TK
40
0.25
15
nm
nm/K
ns
F
Temp. Coefficient of λ
Rise Time
p
F
λp
t
F
r
Fall Time
t
15
ns
F
f
Cut-Off Frequency
= 70 mA, I = 30 mA pp
f
c
23
MHz
mm
DC
AC
Virtual Source Diameter
∅
2.1
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
250
200
150
100
50
200
175
150
125
100
75
R
thJA
R
thJA
50
25
0
0
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( qC )
16647
16964
T
amb
T
amb
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com
Document Number 81091
Rev. 1.4, 23-Jun-04
2
TSFF5410
Vishay Semiconductors
VISHAY
1.25
1.0
T
amb
< 50°
t /T= 0.01
p
1000
0.02
0.05
0.75
0.5
0.25
0
0.1
0.2
0.5
100
980
780
880
0.01
0.1
1.0
10
100
– Wavelength ( nm )
16031
t
p
- Pulse Duration ( ms )
95 9886
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
40°
1000
1.0
100
10
1
0.9
0.8
50°
60°
t
t
= 100 µs
/ T = 0.001
p
p
70°
80°
0.7
0
1
2
3
4
0.6
0.6 0.4 0.2
0
0.2
0.4
18873
94 8883
V
F
- Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Relative Radiant Intensity vs. Angular Displacement
1
0
1000.0
100.0
10.0
1.0
-1
-2
-3
I
= 70mA
= 30mA pp
FDC
-4
-5
I
FAC
0.1
1
10
100
1000
10
100
1000
10000
100000
I
- Forward Current ( mA )
18220
14256
f - Frequency ( kHz )
F
Figure 5. Radiant Intensity vs. Forward Current
Figure 8. Attenuation vs. Frequency
Document Number 81091
Rev. 1.4, 23-Jun-04
www.vishay.com
3
TSFF5410
Vishay Semiconductors
VISHAY
Package Dimensions in mm
95 11260
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4
Document Number 81091
Rev. 1.4, 23-Jun-04
TSFF5410
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81091
Rev. 1.4, 23-Jun-04
www.vishay.com
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