TSUS520 [VISHAY]

GaAs Infrared Emitting Diodes in ?5 mm (T-13/4)Package; 砷化镓红外发光二极管在？ 5毫米（ T- 13/4 ）包装


型号：	TSUS520
厂家：	VISHAY
描述：	GaAs Infrared Emitting Diodes in ?5 mm (T-13/4)Package 砷化镓红外发光二极管在？ 5毫米（ T- 13/4 ）包装二极管
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TSUS520.

Vishay Telefunken

GaAs Infrared Emitting Diodes in ø 5 mm (T–1 )

Package

Description

94 8390

TSUS520. series are infrared emitting diodes in stan-

dard GaAs on GaAs technology, molded in a clear,

blue–grey tinted plastic package. The devices are

spectrally matched to silicon photodiodes and photo-

transistors.

Features

Low cost emitter

Low forward voltage

High radiant power and radiant intensity

Suitable for DC and high pulse current operation

Standard T–1 (ø 5 mm) package

Angle of half intensity ϕ = ± 15

Peak wavelength = 950 nm

High reliability

Good spectral matching to Si photodetectors

Applications

Infrared remote control and free air transmission systems with low forward voltage and low cost requirements

in combination with PIN photodiodes or phototransistors.

Absolute Maximum Ratings

amb

= 25 C

Parameter

Reverse Voltage

Test Conditions

Symbol

Value

Unit

Forward Current

150

300

2.5

210

K/W

Peak Forward Current

Surge Forward Current

Power Dissipation

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

t /T = 0.5, t = 100 s

t = 100 s

FSM

100

–55...+100

260

amb

stg

5 sec, 2 mm from case

375

thJA

Document Number 81055

Rev. 2, 20-May-99

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TSUS520.

Vishay Telefunken

Basic Characteristics

amb

= 25 C

Parameter

Forward Voltage

Test Conditions

I = 100 mA, t = 20 ms

Symbol Min

Typ

1.3

Max

1.7

Unit

Temp. Coefficient of V

Reverse Current

I = 100mA

V = 5 V

–1.3

mV/K

100

Junction Capacitance

V = 0 V, f = 1 MHz, E = 0

I = 20 mA

–0.8

±15

950

Temp. Coefficient of

Angle of Half Intensity

Peak Wavelength

Spectral Bandwidth

Temp. Coefficient of

Rise Time

%/K

deg

nm/K

I = 100 mA

0.2

I = 100 mA

800

400

800

400

I = 1.5 A

Fall Time

I = 100 mA

I = 1.5 A

Type Dedicated Characteristics

amb

= 25 C

Parameter

Forward Voltage

Test Conditions

Type

Symbol

Min

Typ

2.2

180

230

280

Max

3.4

2.7

Unit

mW/sr

I =1.5A, t =100 s TSUS5200/5201

TSUS5202

TSUS5200

TSUS5201

TSUS5202

TSUS5200

TSUS5201

TSUS5202

TSUS5200

TSUS5201

TSUS5202

I =100mA,

t =20ms

120

170

Radiant Intensity

Radiant Power

I =1.5A, t =100 s

I =100mA,

t =20ms

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Document Number 81055

Rev. 2, 20-May-99

TSUS520.

Vishay Telefunken

Typical Characteristics (T_amb= 25 C unless otherwise specified)

250

200

150

100

thJA

–1

100

94 7957 e

amb

– Ambient Temperature ( °C )

94 7996 e

V – Forward Voltage ( V )

Figure 1. Power Dissipation vs. Ambient Temperature

Figure 4. Forward Current vs. Forward Voltage

250

1.2

200

1.1

I = 10 mA

150

100

1.0

0.9

0.8

0.7

thJA

100

94 7988 e

amb

– Ambient Temperature ( °C )

94 7990 e

amb

– Ambient Temperature ( °C )

Figure 2. Forward Current vs. Ambient Temperature

Figure 5. Relative Forward Voltage vs.

Ambient Temperature

1000

= 2.5 A ( Single Pulse )

FSM

TSUS 5202

100

t /T=0.01

0.05

0.1

TSUS 5200

0.5

1.0

TSUS 5201

–1

–2

–1

94 7989 e

t – Pulse Duration ( ms )

94 7991 e

I – Forward Current ( mA )

Figure 3. Pulse Forward Current vs. Pulse Duration

Figure 6. Radiant Intensity vs. Forward Current

Document Number 81055

Rev. 2, 20-May-99

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TSUS520.

Vishay Telefunken

1.25

1.0

1000

100

TSUS 5202

0.75

0.5

0.25

TSUS 5200

I = 100 mA

0.1

1000

900

950

94 7992 e

I – Forward Current ( mA )

94 7994 e

– Wavelength ( nm )

Figure 7. Radiant Power vs. Forward Current

Figure 9. Relative Radiant Power vs. Wavelength

0°

1.6

1.2

30°

40°

I = 20 mA

1.0

0.9

0.8

0.4

50°

60°

0.8

0.7

70°

80°

140

0.6

–10 0 10

100

0.6

0.4

0.2

0.4

94 7993 e

amb

– Ambient Temperature ( °C )

94 7995 e

Figure 8. Rel. Radiant Intensity\Power vs.

Ambient Temperature

Figure 10. Relative Radiant Intensity vs.

Angular Displacement

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Document Number 81055

Rev. 2, 20-May-99

TSUS520.

Vishay Telefunken

Dimensions in mm

95 10916

Document Number 81055

Rev. 2, 20-May-99

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TSUS520.

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 81055

Rev. 2, 20-May-99

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