U406-E3 [VISHAY]
Small Signal Field-Effect Transistor, N-Channel, Junction FET;
| 型号： | U406-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, N-Channel, Junction FET |
| 文件： | 总5页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SST/U401 Series
Vishay Siliconix
Monolithic N-Channel JFET Duals
SST404
SST406
U401
U404
U406
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IG Typ (pA)
ꢀ
V
–
V
ꢀ
M
a
x
(
m
V
)
G
S
1
G
S
2
U401
–0.5 to –2.5
–0.5 to –2.5
–0.5 to –2.5
–40
–40
–40
1
1
1
–2
–2
–2
5
SST/U404
SST/U406
15
40
FEATURES
BENEFITS
APPLICATIONS
D Monolithic Design
D High Slew Rate
D Tight Differential Match vs. Current
D Wideband Differential Amps
D Improved Op Amp Speed, Settling Time Accuracy D High-Speed,Temp-Compensated,
Single-Ended Input Amps
D Low Offset/Drift Voltage
D Low Gate Leakage: 2 pA
D Low Noise
D Minimum Input Error/Trimming Requirement
D High-Speed Comparators
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Impedance Converters
D High CMRR: 102 dB
D Minimum Error with Large Input Signal
DESCRIPTION
The SST/U401 series of high-performance monolithic dual
JFETs features extremely low noise, tight offset voltage and
low drift over temperature specifications, and is targeted for
use in a wide range of precision instrumentation applications.
This series has a wide selection of offset and drift
specifications with the U401 featuring a 5-mV offset and
10-mV/_C drift.
with full military processing (see Military Information). The SST
series SO-8 package provides ease of manufacturing, and the
symmetrical pinout prevents improper orientation. The SO-8
package is available with tape-and-reel options for
compatibility with automatic assembly methods (see
Packaging Information).
For similar high-gain products in TO-78 packaging, see the
2N5911/5912 data sheet.
The U series, hermetically sealed TO-71 package is available
TO-71
Narrow Body SOIC
S
G
2
1
1
3
6
4
S
D
G
NC
1
2
3
4
8
7
6
5
1
1
1
G
2
D
1
D
2
2
5
D
2
NC
S
2
G
1
S
2
Top View
SST404, SST406
Top View
U401, U404, U406
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a
Power Dissipation :
Per Side . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
b
Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Notes
Storage Temperature :
U Prefix . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SST Prefix . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN106.
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-1
SST/U401 Series
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
SST/U404
U401
SST/U406
Parameter
Static
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
V
I
G
= –1 mA, V = 0 V
–58
–40
–40
–40
(BR)GSS
DS
Gate-Source
Breakdown Voltage
V
I
G
= "1 mA, V = 0 V, V = 0 V
"45
"30
"30
"30
(BR)G1 – G2
DS
GS
V
Gate-Source
Cutoff Voltage
V
V
= 15 V, I = 1 nA
–1.5
–0.5
–2.5
–0.5
–2.5
–0.5
–2.5
GS(off)
DS
D
Saturation
Drain Current
I
V
= 10 V, V = 0 V
3.5
0.5
10
0.5
10
0.5
10
mA
DSS
DS
GS
b
V
= –30 V, V = 0 V
–2
–1
–25
–25
–25
pA
nA
pA
nA
GS
DS
Gate Reverse Current
I
GSS
T
= 125_C
A
V
= 15 V, I = 200 mA
–2
–15
–10
–15
–10
–15
–10
DG
D
Gate Operating
Current
I
G
T
A
= 125_C
–0.8
Drain-Source
On-Resistance
r
V
= 0 V, I = 0.1 mA
250
–1
W
DS(on)
GS
D
Gate-Source Voltage
V
V
= 15 V, I = 200 mA
–2.3
–2.3
–2.3
GS
DG
D
V
Gate-Source
Forward Voltage
V
I
G
= 1 mA , V = 0 V
DS
0.7
GS(F)
Dynamic
Common-Source
Forward
Transconductance
g
1.5
1.3
4
1
2
2
2
7
1
2
2
2
7
1
2
2
2
7
mS
mS
fs
V
= 15 V, I = 200 mA
f = 1 kHz
DS
D
Common-Source
Output Conductance
g
os
Common-Source
Forward
Transconductance
g
fs
mS
mS
V
= 10 V, V = 0 V
DS
GS
f = 1 kHz
Common-Source
Output Conductance
g
os
5
4
30
8
30
8
30
8
Common-Source
Input Capacitance
C
iss
V
= 15 V, I = 200 mA
DS
D
pF
Common-Source
Reverse Transfer
Capacitance
f = 1 MHz
C
rss
1.5
10
3
3
3
Equivalent Input
Noise Voltage
V
= 15 V, I = 200 mA
nV⁄
√Hz
DS
D
e
20
20
20
n
f = 10 Hz
Matching
Differential
Gate-Source Voltage
|
|
GS2
V
– V
V
= 10 V, I = 200 mA
5
15
25
40
80
mV
DG
D
GS1
SST404
20
40
Gate-Source Voltage Differ-
ential Change
with Temperature
V
= 10 V
DG
|
|
D V
– V
GS2
DT
GS1
SST406
All U
I
D
= 200 mA
mV/_C
T
A
= –55 to 125C
10
Common Mode
Rejection Ratio
CMRR
V
= 10 to 20 V, I = 200 mA
102
95
95
dB
DG
D
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NNR
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-2
SST/U401 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
10
8.0
100 nA
10 nA
1 nA
IDSS @ VDS = 15 V, VGS = 0 V
g
fs
@ VDG = 15 V, VGS = 0 V
f = 1 kHz
IG @ I = 500 mA
D
8
6
4
2
0
6.4
T
= 125_C
A
4.8
3.2
1.6
0
g
fs
I
@ 125_C
GSS
50 mA
100 pA
50 mA
T
A
= 25_C
10 pA
1 pA
IDSS
IGSS @ 25_C
0.1 pA
0
50
0
0
0
–0.5
–1.0
–1.5
–2.0
–2.5
10
20
30
40
VGS(off) – Gate-Source Cutoff Voltage (V)
VDG – Drain-Gate Voltage (V)
Output Characteristics
Output Characteristics
4
7
VGS(off) = –1.5 V
VGS(off) = –2 V
V
= 0 V
GS
V
= 0 V
GS
6
5
3.2
2.4
1.6
0.8
0
–0.2 V
–0.2 V
–0.4 V
–0.6 V
4
–0.4 V
–0.6 V
3
2
–0.8 V
–1.0 V
–1.2 V
–1.2 V
–0.8 V
–1.0 V
1
0
4
8
12
16
20
0
4
8
12
16
20
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
3
4
V
= 0 V
V
= 0 V
GS
GS
VGS(off) = –1.5 V
VGS(off) = –2 V
–0.2 V
–0.4 V
–0.6 V
2.4
1.8
1.2
0.6
0
3.2
2.4
1.6
0.8
0
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–0.8 V
–1.0 V
–1.2 V
–1.2 V
–1.4 V
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-3
SST/U401 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Gate-Source Differential Voltage
vs. Drain Current
Transfer Characteristics
100
10
1
5
4
3
2
VGS(off) = –1.5V
VDS = 15 V
VDG = 15 V
T
= –55_C
A
25_C
SST/U404
U401
125_C
1
0
0
–0.4
–0.8
–1.2
–1.6
–2
0.01
0.1
ID – Drain Current (mA)
1
VGS – Gate-Source Voltage (V)
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
100
130
120
110
100
90
VDG = 15 V
DVDG
DT = 25 to 125_C
CMRR = 20 log
A
DT = –55 to 25_C
D
A
V
V
GS2
–
GS1
SST/U404
U401
DV = 10 – 20 V
DG
10
5 – 10 V
80
1
0.01
0.1
1
0.01
0.1
1
ID – Drain Current (mA)
ID – Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
150
500
400
120
90
VGS(off) = –1.5 V
VGS(off) = –1.0 V
–2.0 V
300
200
–1.5 V
–2.0 V
60
g
R
L
fs
A
+
V
1 ) R g
os
L
Assume VDD = 15 V, V = 5 V
DS
30
0
100
0
10 V
R
+
I
L
D
0.01
0.1
1
0.01
0.1
1
ID – Drain Current (mA)
ID – Drain Current (mA)
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-4
SST/U401 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
10
f = 1 MHz
f = 1 MHz
8
6
8
6
VDS = 0 V
VDS = 0 V
5 V
4
2
0
4
2
0
5 V
15 V
15 V
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
Equivalent Input Noise Voltage vs. Frequency
20
5
4
3
2
1
0
VGS(off) = –1.5 V
VDS = 15 V
f = 1 kHz
VDG = 15 V
16
12
8
ID @ 200 mA
T
A
= –55_C
25_C
4
0
VGS = 0 V
125_C
0.01
0.1
ID – Drain Current (mA)
1
10
100
1 k
10 k
100 k
f – Frequency (Hz)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
4.0
3.2
2.4
1.6
500
30
VGS(off) = –1.5 V
VDS = 15 V
f = 1 kHz
rDS
400
300
200
100
0
24
18
gos
T
A
= –55_C
r
V
@ ID = 100 mA
DS
= 0 V
GS
g
V
@ VDG = 15 V
os
= 0 V
GS
25_C
12
6
f = 1 kHz
125_C
0.8
0
0
0
–0.5
–1.0
–1.5
–2.0
–2.5
0.01
0.1
ID – Drain Current (mA)
1
VGS(off) – Gate-Source Cutoff Voltage (V)
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-5
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