UG06B-E3 [VISHAY]

DIODE 0.6 A, 100 V, SILICON, SIGNAL DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE MPG06, 2 PIN, Signal Diode;
UG06B-E3
型号: UG06B-E3
厂家: VISHAY    VISHAY
描述:

DIODE 0.6 A, 100 V, SILICON, SIGNAL DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE MPG06, 2 PIN, Signal Diode

二极管
文件: 总4页 (文件大小:182K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UG06A thru UG06D  
Vishay General Semiconductor  
Miniature Ultrafast Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
0.6 A  
50 V to 200 V  
40 A  
15 ns  
VF  
0.95 V  
Tj max.  
150 °C  
Case Style MPG06  
Features  
Mechanical Data  
• Glass passivated chip junction  
• Ultrafast reverse recovery time  
• Soft recovery characteristics  
• Low forward voltage drop  
Case: MPG06  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameters  
Symbol  
VRRM  
UG06A  
50  
UG06B  
100  
UG06C  
150  
UG06D  
200  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
105  
150  
140  
200  
V
V
A
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
IFSM  
0.6  
40  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88757  
21-Jul-05  
www.vishay.com  
1
UG06A thru UG06D  
Vishay General Semiconductor  
Electrical Characteristics  
TA = 25 °C unless otherwise specified  
Parameters  
Test condition  
Symbol  
VF  
Value  
0.95  
Unit  
V
at IF = 0.6 A (1)  
Maximum instantaneous forward  
voltage  
Maximum DC reverse current at rated  
DC blocking voltage  
TA= 25 °C  
IR  
5.0  
100  
µA  
TA= 100 °C  
Maximum reverse recovery time  
Maximum reverse recovery time  
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
trr  
trr  
15  
ns  
ns  
IF = 0.6 A, VR = 30 V,  
TJ = 25 °C  
25  
35  
di/dt = 50 A/µs, Irr = 10 % IRM TJ = 100 °C  
Maximum stored charge  
IF = 0.6 A, VR = 30 V,  
TJ = 25 °C  
Qrr  
CJ  
8.0  
20  
nC  
pF  
di/dt = 50 A/µs, Irr = 10 % IRM TJ = 100 C  
at 4 V, 1 MHz  
Typical junction capacitance  
Notes:  
9.0  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameters  
Typical thermal resistance (1)  
Symbol  
RθJA  
RθJL  
UG06A  
UG06B  
UG06C  
UG06D  
Units  
97  
28  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient and junction to lead at 0.375" (9.5 mm) lead length P.C.B. mounted  
with 0.2 x 0.2" (5.0 x 5.0 mm) copper pads  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
0.9  
100  
TJ = 75 °C  
8.3ms Single Half Sine-Wave  
Resistive or Inductive Load  
0.375" (9.5mm) Lead Length  
TL Lead Temperature  
0.75  
0.6  
0.45  
0.3  
10  
TA, Ambient Temperature  
P.C.B. Mounted  
0.2" x 0.2" (5 x 5mm)  
Copper Pads  
0.15  
0
1
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Temperature ( °C)  
Number of Cycles at 60 HZ  
Figure 1. Maximum Forward Current Derating Curves  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88757  
21-Jul-05  
2
UG06A thru UG06D  
Vishay General Semiconductor  
100  
10  
1
60  
trr  
Q
IF = 0.6A  
VR=30V  
rr  
50  
40  
30  
20  
10  
0
TJ = 100 °C  
di/dt=20A/ µs  
di/dt=50A/ µs  
Pulse Width = 300 µs  
1% Duty Cycle  
di/dt=100A/ µs  
di/dt=150A/ µs  
di/dt=150A/ µs  
di/dt=100A/ µs  
TJ = 25 °C  
0.1  
di/dt=50A/ µs  
di/dt=20A/µs  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
25  
50  
75  
100  
125  
150  
175  
Instantaneous Forward Voltage (V)  
Junction Temperature (°C)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Reverse Switching Charateristics  
1,000  
100  
100  
T
= 25°C  
J
f = 1.0MHZ  
Vsig = 50mVp-p  
TJ = 100 °C  
10  
TJ = 25 °C  
10  
1
0.1  
0.01  
1
0.1  
0
20  
40  
60  
80  
100  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
Reverse Voltage (V)  
Figure 4. Typical Reverse Leakage Characteristics  
Figure 6. Typical Junction Capacitance  
Package outline dimensions in inches (millimeters)  
Case Style MPG06  
1.0 (25.4)  
MIN.  
0.100 (2.54)  
0.090 (2.29)  
DIA  
0.125 (3.18)  
0.115 (2.92)  
1.0 (25.4)  
MIN.  
0.025 (0.635)  
0.023 (0.584)  
DIA.  
Document Number 88757  
21-Jul-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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