UG8JT/45 [VISHAY]
Rectifier Diode, 1 Element, 8A, 600V V(RRM);
| 型号： | UG8JT/45 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 8A, 600V V(RRM) 二极管 |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UG8JT, UGF8JT, UGB8JT Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Ultrafast Rectifiers
Reverse Voltage 500 to 600V
Forward Current 8.0A
Reverse Recovery Time 25ns
ITO-220AC (UGF8 Series)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AC (UG8 Series)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.676 (17.2)
0.646 (16.4)
DIA.
0.600 (15.5)
0.580 (14.5)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.113 (2.87)
0.103 (2.62)
PIN
0.145 (3.68)
0.135 (3.43)
1
2
0.191 (4.85)
0.171 (4.35)
0.603 (15.32)
0.573 (14.55)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
PIN
1
2
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
PIN 2
0.110 (2.79)
0.100 (2.54)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.560 (14.22)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
0.530 (13.46)
CASE
0.105 (2.67)
TO-263AB (UGB8 Series)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.160 (4.06)
0.411 (10.45)
0.380 (9.65)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN
Mounting Pad Layout TO-263AB
K
0.42
(10.66)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
Dimensions in inches
and (millimeters)
0.33
(8.38)
K
1
2
0-0.01 (0-0.254)
0.63
0.110 (2.79)
0.090 (2.29)
(17.02)
0.027 (0.686)
0.037 (0.940)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.08
0.205 (5.20)
0.195 (4.95)
(2.032)
0.12
(3.05)
0.24
(6.096)
Features
Mechanical Data
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
• Ideally suited for freewheeling diode and power factor
correction applications
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
• Soft recovery characteristics
• Excellent high temperature switching
• Optimized to reduce switching losses
• High temperature soldering in accordance with CECC
802 / Reflow guaranteed
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
• Glass passivated chip junction
Document Number 88767
03-Jul-02
www.vishay.com
1
UG8JT, UGF8JT, UGB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
VRRM
VRWM
VRMS
VDC
UG8HT
500
UG8JT
600
Unit
V
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
400
480
V
350
420
V
Maximum DC blocking voltage
500
600
V
Maximum average forward rectified current
IF(AV)
8.0
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) at TC = 100°C
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (UGF types only)
from terminals to heatsink with t = 1.0 second, RH ≤ 30%
VISOL
V
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
UG8HT
UG8JT
Unit
Maximum instantaneous
forward voltage(4)
IF = 8A, TJ = 25°C
IF = 8A, TJ = 125°C
1.75
1.50
V
VF
TJ = 25°C
TJ = 100°C
TJ = 125°C
30
800
4.0
µA
µA
mA
Maximum DC reverse current at VRWM
IR
Maximum reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
trr
25
50
ns
ns
—
A
Maximum reverse recovery time at
IF = 1.0A, di/dt = 50A/µs, VR = 30V, Irr = 0.1 IRM
Typical softness factor (tb/ta)
IF = 8.0A, di/dt = 240A/µs, VR = 400V, Irr = 0.1 IRM
S
1.0
5.5
10
Maximum reverse recovery current at
IF = 8.0A, di/dt = 64A/µs, VR = 400V, TC = 125°C
IRM
IRM
tfr
Maximum reverse recovery current at
IF = 8.0A, di/dt = 240A/µs, VR = 400V, TC = 125°C
A
Peak forward recovery time at
IF = 8.0A, di/dt = 64A/µs, VF = 1.1VF max
500
ns
Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
UG8
2.2
UGF8
UGB8
2.2
Unit
Typical thermal resistance from junction to case
RθJC
5.0
°C/W
Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(2) Clip mounting (on case), where leads do overlap heatsink
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
UG8
TO-220AC
ITO-220AC
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
UGF8
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
UGB8
TO-263AB
www.vishay.com
2
Document Number 88767
03-Jul-02
UG8JT, UGF8JT, UGB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 -- Maximum Forward Current
Fig. 2 -- Maximum Non-Repetitive Peak
Derating Curve
Forward Surge Current
1,000
12.0
Resistive or Inductive Load
10.0
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
8.0
UG8, UGB8
100
6.0
UG8F
4.0
2.0
0
10
25
50
75
100
125
150
175
1
10
100
100
150
Case Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 -- Typical Instantaneous
Forward Characteristics
Fig. 4 --Typical Reverse Leakage
Characteristics
10,000
1,000
100
100
10
TJ = 25°C max.
Pulse Width = 300µs
1% Duty Cycle
1
0.1
10
0.01
1
0
20
40
60
80
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 -- Reverse Switching
Characteristics
Fig. 5 -- Typical Junction Capacitance
350
300
250
100
Qrr
Trr
IF = 8.0A
Vr = 30V
di/dt =
TJ = 25°C
f = 1.0MHZ
200
150
100
10
Vsig = 50 mvp-p
50
0
1
0.1
25
50
75
100
125
1
10
100
Reverse Voltage (V)
Junction Temperature (°C)
Document Number 88767
03-Jul-02
www.vishay.com
3
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