V30100SG-M3-4W [VISHAY]
High-Voltage Trench MOS Barrier Schottky Rectifier; 高压Trench MOS势垒肖特基整流器
| 型号： | V30100SG-M3-4W |
| 厂家： | 
VISHAY |
| 描述： | High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
V30100SG, VI30100SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.437 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AB
TO-262AA
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
3
3
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
2
2
1
1
VI30100SG
V30100SG
• Halogen-free according to IEC 61249-2-21 definition
PIN 1
PIN 3
PIN 1
PIN 3
PIN 2
K
PIN 2
CASE
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
Base P/N-M3
- halogen-free, RoHS compliant, and
IF(AV)
30 A
100 V
250 A
0.76 V
150 °C
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
VRRM
IFSM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
VF at IF = 30 A
TJ max.
TYPICAL APPLICATIONS
Polarity: As marked
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
V30100SG
VI30100SG
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
100
30
V
A
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
250
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 89191
Revision: 25-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V30100SG, VI30100SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.50
0.60
0.92
0.44
0.55
0.76
8.8
MAX.
UNIT
IF = 5 A
-
IF = 10 A
IF = 30 A
IF = 5 A
TA = 25 °C
-
1.00
-
(1)
Maximum instantaneous forward voltage
VF
V
IF = 10 A
IF = 30 A
T
A = 125 °C
-
0.83
-
TA = 25 °C
A = 125 °C
TA = 25 °C
A = 125 °C
μA
mA
μA
VR = 70 V
T
6.5
-
(2)
Reverse current
IR
43
350
35
VR = 100 V
T
18
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V30100SG
VI30100SG
UNIT
Typical thermal resistance
RJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-262AA
TO-220AB
TO-262AA
PREFERRED P/N
V30100SG-M3/4W
V30100SG-M3/4W
V30100SGHM3/4W (1)
V30100SGHM3/4W (1)
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
1.88
1.45
1.88
1.45
4W
4W
4W
4W
Tube
Tube
Tube
Tube
50/tube
50/tube
50/tube
Note
(1)
AEC-Q101 qualified
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89191
Revision: 25-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V30100SG, VI30100SG
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
35
100
10
Resistive or Inductive Load
TA = 150 °C
V(I)30100SG
30
25
20
15
10
5
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0
0.001
0
25
50
75
100
125
150
10
20
30
40
50
60
70
80
90 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
32
28
24
20
16
12
8
10 000
1000
100
D = 0.8
D = 0.5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
4
D = tp/T
24
tp
0
0.1
1
10
100
0
4
8
12
16
20
28
32
36
Reverse Voltage (V)
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
1
10
Junction to Case
TA = 150 °C
1
TA = 125 °C
0.1
0.01
TA = 25 °C
V(I)30100SG
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89191
Revision: 25-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V30100SG, VI30100SG
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.950 (24.13)
0.920 (23.37)
0.510 (12.95)
0.470 (11.94)
0.330 (8.38)
PIN
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
PIN 1
PIN 3
PIN 2
0.045 (1.14)
HEATSINK
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
www.vishay.com
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89191
Revision: 25-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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