V30120C-M3-4W [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器
| 型号： | V30120C-M3-4W |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
V30120C, VI30120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
TO-220AB
TO-262AA
K
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
3
2
• Halogen-free according to IEC 61249-2-21 definition
2
1
1
VI30120C
V30120C
TYPICAL APPLICATIONS
PIN 1
PIN 1
PIN 3
PIN 2
K
PIN 2
CASE
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 15 A
VRRM
120 V
150 A
0.68 V
150 °C
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
IFSM
VF at IF = 15 A
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120C
VI30120C
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
30
V
per device
per diode
Maximum average forward rectified current (fig. 1)
IF(AV)
A
A
15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 89160
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V30120C, VI30120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.56
0.71
0.86
0.50
0.60
0.68
11
MAX.
UNIT
IF = 5 A
-
IF = 7.5 A
IF = 15 A
IF = 5 A
TA = 25 °C
-
0.97
-
(1)
Instantaneous forward voltage per diode
VF
V
IF = 7.5 A
IF = 15 A
TA = 125 °C
-
0.76
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
V
R = 90 V
8
-
(2)
Reverse current per diode
IR
-
800
50
VR = 120 V
17
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120C
VI30120C
UNIT
Typical thermal resistance per diode
RJC
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-262AA
TO-220AB
TO-262AA
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
V30120C-M3/4W
1.89
1.45
1.89
1.45
4W
4W
4W
4W
Tube
Tube
Tube
Tube
VI30120C-M3/4W
V30120CHM3/4W (1)
VI30120CHM3/4W (1)
50/tube
50/tube
50/tube
Note
(1)
AEC-Q101 qualified
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89160
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V30120C, VI30120C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
40
100
10
Resistive or Inductive Load
35
TA = 150 °C
30
25
20
15
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
5
Mounted on Specific Heatsink
0
0.001
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
18
D = 0.8
10 000
D = 0.5
16
14
12
10
8
TJ = 25 °C
f = 1.0 MHz
D = 0.3
Vsig = 50 mVp-p
D = 0.2
1000
100
10
D = 0.1
D = 1.0
T
6
4
D = tp/T
12
tp
2
0
0
2
4
6
8
10
14
16
18
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
Junction to Case
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
1
0.01
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 89160
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V30120C, VI30120C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.950 (24.13)
0.920 (23.37)
0.510 (12.95)
0.470 (11.94)
0.330 (8.38)
PIN
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89160
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Document Number: 91000
Revision: 11-Mar-11
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