V40100PG_08 [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF = 5 A; 双高压Trench MOS势垒肖特基整流器超低VF = 0.420 V在IF = 5 A
| 型号： | V40100PG_08 |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF = 5 A |
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
V40100PG
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.420 V at I = 5 A
F
F
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
3
2
1
TO-247AD (TO-3P)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PIN 2
PIN 1
PIN 3
CASE
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 20 A
Case: TO-247AD (TO-3P)
VRRM
100 V
250 A
0.67 V
150 °C
Epoxy meets UL 94V-0 flammability rating
IFSM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
VF at IF = 20 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs Maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V40100PG
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
per device
Maximum average forward rectified (Fig. 1)
per diode
40
20
IF(AV)
A
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
1.0
A
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 88972
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
V40100PG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
100
Breakdown voltage
I
R = 1.0 mA
TJ = 25 °C
TJ = 25 °C
VBR
-
V
IF = 5 A
IF = 10 A
IF = 20 A
0.490
0.572
0.731
-
-
0.81
Instantaneous forward voltage per diode (1)
Reverse current at rated VR per diode (2)
VF
V
IF = 5 A
IF = 10 A
IF = 20 A
0.42
0.50
0.67
-
-
TJ = 125 °C
0.73
TJ = 25 °C
TJ = 125 °C
8.4
7.4
300
15
µA
mA
VR = 70 V
IR
TJ = 25 °C
TJ = 125 °C
40.5
18.2
500
35
µA
mA
VR = 100 V
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V40100PG
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V40100PG-E3/45
6.109
45
30/Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
50
40
30
20
10
0
16
14
12
10
8
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
6
4
D = tp/T
tp
2
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88972
Revision: 26-May-08
New Product
V40100PG
Vishay General Semiconductor
300
250
200
150
100
50
10 000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
0
100
10
100
0.1
1
10
100
1
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 6. Typical Junction Capacitance Per Diode
100
10
Junction to Case
TJ = 150 °C
TJ = 125 °C
10
1
1
TJ = 25 °C
0.1
0.1
0.01
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
t - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
Document Number: 88972
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
V40100PG
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.203 (5.16)
0.193 (4.90)
0.078 (1.98) REF.
0.323 (8.2)
0.313 (7.9)
30°
10
0.170
(4.3)
10° TYP.
0.840 (21.3)
0.820 (20.8)
Both Sides
0.142 (3.6)
0.138 (3.5)
1
2
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.118 (3.0)
0.108 (2.7)
0.127 (3.22)
0.117 (2.97)
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.030 (0.76)
0.020 (0.51)
0.225 (5.7)
0.205 (5.2)
0.048 (1.22)
0.044 (1.12)
PIN 2
CASE
PIN 1
PIN 3
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88972
Revision: 26-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
V40100PW-M3/4W
DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-3PW, 3 PIN, Rectifier Diode
VISHAY
V40120C-E3/4W
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
VISHAY
V40120C-M3/4W
DIODE 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
V40120CHM3/4W
DIODE 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明